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1.
J Phys Chem A ; 113(29): 8299-306, 2009 Jul 23.
Artigo em Inglês | MEDLINE | ID: mdl-19569670

RESUMO

The potential energy surface of the H(2)/S(2) system has been characterized at the full valence MRCI+Davidson/aug-cc-pV(Q+d)Z level of theory using geometries optimized at the MRCI/aug-cc-pVTZ level. The analysis includes channels occurring entirely on either the singlet or the triplet surface as well as those involving an intersystem crossing. RRKM-based multiple well calculations allow the prediction of rate constants in the temperature range of 300-2000 K between 0.1 and 10 bar. Of the SH recombined on the singlet surface, the stabilization of the rovibrationally excited adduct HSSH is at the low-pressure limit at 1 bar, but it has a rate comparable to that forming another major set of products H(2)S + S (via an intersystem crossing) at temperatures below 1000 K; at higher temperatures, HSS + H becomes the dominant product. For the reaction H(2)S + S, the presence of an intersystem crossing allows the formation of the singlet excited adduct H(2)SS, most of which rearranges and stabilizes as HSSH under atmospheric conditions. At high temperatures, the majority of excited HSSH dissociates to SH + SH and HSS + H. Compared to reported shock tube measurements of the reaction H(2)S + S, most of the S atom consumption can be described by the triplet abstraction route H(2)S + S --> SH + SH, especially at high temperatures, but inclusion of the singlet insertion channel provides a better description of the experimental data. The reaction HSS + H was found to proceed predominantly on the singlet surface without a chemical barrier. The formation of the major product channel SH + SH is very fast at room temperature (approximately 4 x 10(15) cm(3) mol(-1) s(-1)). While the formation of H(2)S + S or S(2) + H(2) via an isomerization or an intersystem crossing, respectively, are minor product channels, their rates are significantly higher than those of the corresponding direct triplet channels, except at elevated temperatures. Finally, due to the relatively shallow nature of its well, the stabilization of H(2)SS is negligible under conditions of likely interest.

2.
J Phys Chem A ; 113(12): 2975-81, 2009 Mar 26.
Artigo em Inglês | MEDLINE | ID: mdl-19220039

RESUMO

The reaction of SH + O2 has been characterized using multireference methods, with geometries and vibrational frequencies determined at the CASSCF/cc-pVTZ level and single-point energies calculated at the MRCI/aug-cc-pV(Q+d)Z level. The dominant product channels are found to be SO + OH and HSO + O. Whereas the formation of SO + OH has a barrier of approximately 81 kJ mol-1, it is energetically more favorable than the formation of HSO + O, which is barrierless beyond the endothermicity of approximately 89 kJ mol-1 at 0 K. Thus, the reaction SH + O2 --> SO + OH is 2 orders of magnitude faster than the reaction SH + O2 --> HSO + O at room temperature, revealing that the atmospheric oxidation of SH leads directly to the formation of SO + OH with the rate coefficient of approximately 1.0 x 10(-2) cm3 mol-1 s-1. At temperatures above 1000 K, however, the rates of the two channels become comparable. This may be attributed to the entropy effects leading to the higher pre-exponential factor for the channel (forming HSO + O) via a more loose transition state than that (forming SO + OH) entailing a four-centered transition state. Whereas the hydrogen abstraction reaction producing S + HO2 is found to proceed on the quartet surface, the substantial barrier of approximately 165 kJ mol-1 means that it occurs as a minor product channel. Finally, the formation of possible products SO2 + H is prohibited due to the lack of a transition state for the direct sulfur insertion.

3.
J Phys Chem A ; 112(14): 3239-47, 2008 Apr 10.
Artigo em Inglês | MEDLINE | ID: mdl-18335909

RESUMO

The reaction of H2S + S has been characterized at the multireference configuration interaction level with the geometries optimized using the aug-cc-pVTZ basis set and the single-point energy calculated using the aug-cc-pV(Q+d)Z basis set. As in the analogous reaction of H2 + S, the presence of an intersystem crossing enables products (SH + SH) to be formed on the singlet surface through S insertion, which bypasses the triplet barrier (19.1 kJ mol-1 relative to SH + SH) of the H abstraction route. This provides theoretical evidence for SH + SH formation without barrier beyond endothermicity at sufficiently low temperatures. The H abstraction route, however, is expected to be competitive at higher temperatures due to a much higher Arrhenius pre-exponential factor (6.9 x 10(14) cm3 mol-1 s-1 derived from TST calculation) than that of S insertion channel (3.7 x 10(13) cm3 mol-1 s-1, derived by a least-squares fit to the measurements). With a slightly higher transition-state barrier than that of the H abstraction channel, the production of S2 + H2 is less favored due to proceeding via intersystem crossing and insertion. While the formation of HSS + H is energetically unfavorable relative to SH + SH, recombination channels producing H2SS or the more stable HSSH are expected to occur under collisional stabilization conditions at high pressures.

4.
J Phys Chem A ; 109(6): 1057-62, 2005 Feb 17.
Artigo em Inglês | MEDLINE | ID: mdl-16833414

RESUMO

Quantum chemical calculations were carried out to study the interaction of hydrogen sulfide with molecular oxygen in the gas phase. The basic mechanism, the rates of reaction, and the potential energy surface were calculated. Isomers and transition states that connect the reactants with intermediates and products of reaction were identified using the G2 method and B3LYP/6-311+G(3df,2p) functional. Hydrogen abstraction to form HO2 + SH is the dominant product channel and proceeds through a loose transition state well-described at the level of calculation employed. The temperature dependence of the rate coefficient in the range 300-3000 K has been determined on the basis of the ab initio potential energy surface and with variational transition-state theory. The reaction is 169.5 kJ mol(-1) endothermic at 0 K with a rate constant given by 2.77 x 10(5) T(2.76) exp(-19 222/T) cm3 mol(-1) s(-1) and should proceed slowly under atmospheric thermal conditions, but it offers a route to the initiation of H2S combustion at relatively low temperatures.

5.
J Phys Chem A ; 109(15): 3438-47, 2005 Apr 21.
Artigo em Inglês | MEDLINE | ID: mdl-16833681

RESUMO

The reactions of a ketone surface oxide group have been studied on two forms of the zigzag edge and the armchair edge of a model char using density functional theory at the B3LYP/6-31G(d) level of theory. Rearrangement and surface migration reactions were found to occur much more rapidly than desorption reactions on both the zigzag and armchair edges. A number of desorption pathways characterized here go some way toward explaining the experimentally observed broad activation energy profile for CO desorption. Three separate desorption processes were characterized; on the zigzag surface two were found with activation energies of 275 and 367 kJ mol(-1), while on the armchair surface one was found with an activation energy of 296 kJ mol(-1). The activation energies for these processes were found to be insensitive to increasing the size of the char fragment. On a larger char fragment, however, an extra desorption process was found to be possible, with an activation energy of 160 kJ mol(-1).

6.
J Phys Chem A ; 109(36): 8180-6, 2005 Sep 15.
Artigo em Inglês | MEDLINE | ID: mdl-16834204

RESUMO

Quantum chemical methods at the Gaussian-2 and -3 levels of theory have been used to investigate the reactions between H(2)S, SO(2), and S(2)O such as might occur in the front-end furnace of the Claus process. The direct reaction between H(2)S and SO(2) occurs via a 5-centered transition state with an initial barrier of approximately 135 kJ mol(-1) and an overall barrier of approximately 153 kJ mol(-1) to produce S(2)O and H(2)O. We indicate approximate values here because there are a number of isomers in the reaction pathway that have barriers slightly different from those quoted. The presence of a water molecule lowers this by approximately 60 kJ mol(-1), but the van der Waals complex required for catalysis by water is thermodynamically unfavorable under the conditions in the Claus reactor. The direct reaction between H(2)S and S(2)O can occur via two possible pathways; the analogous reaction to H(2)S + SO(2) has an initial barrier of approximately 117 kJ mol(-1) and an overall barrier of approximately 126 kJ mol(-1) producing S(3) and H(2)O, and a pathway with a 6-centred transition state has a barrier of approximately 111 kJ mol(-1), producing HSSSOH. Rate constants, including a QRRK analysis of intermediate stabilization, are reported for the kinetic scheme proposed here.

7.
J Am Chem Soc ; 124(31): 9299-309, 2002 Aug 07.
Artigo em Inglês | MEDLINE | ID: mdl-12149038

RESUMO

The use of a quinone functionality in the linkage unit of laterally bridged oligoporphyrins as a switch for controlling electronic coupling between the termini is examined. The quinone-bridged bisporphyrin P(2)TA-O(2) was synthesized by condensation of 2 equiv of the dione 2,3-dioxo-5,10,15,20-tetrakis(3,5-di-tert-butylphenyl)chlorin with 2,3,5,6-tetraamino-1,4-benzoquinone. The electronic absorption spectra of P(2)TA-O(2) and its conjugated benzenoid analogue P(2)TA are measured and assigned, in conjunction with the spectra of the fragment monomers and porphyrin-bridge compounds. Band homologies and CASPT2 calculations are used to make the assignments. Chemically, the dimer in one case is bridged by a through-conjugated, pi-delocalized 1,4,5,8-tetraazaanthracene molecule. This is shown to display significant inter-porphyrin coupling, with an observed difference in the exciton couplings of the B(x) and B(y) bands being ca. 0.18 eV. However, the other dimer is bridged using a derivative in which the central ring is converted to a cross-conjugated, pi-localized quinonoid form; this molecule displays no observable inter-porphyrin coupling. This scenario provides a paradigm for the use of molecular electronic devices in sensing, control, and high-capacity relatively low-speed data storage applications.

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