Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide.

Achieving effective polarity control of n- and p-type transistors based on two-dimensional (2D) materials is a critical challenge in the process of integrating transition metal dichalcogenides (TMDC) into complementary metal-oxide semiconductor (CMOS) logic circuits. Herein, we utilized a proficient and nondestructive method of electron-charge transfer to achieve a complete carrier polarity conversion from p-to n-type by depositing a thin layer of aluminum oxide (Al2O3) onto tungsten diselenide (WSe2). By utilizing the Al2O3 passivation layer, we observed precisely tuned n-type behavior in contrast to transistors fabricated on the as-grown WSe2 film without any passivation layer, which display prominent p-type behavior. The polarity-transformed n-type WSe2 transistor from the pristine p-type shows the maximum ON current of ∼0.1 µA accompanied by a high electron mobility of 7 cm2 V-1 s-1 at a drain voltage (VDS) of 1 V. We successfully showcased a homogeneous CMOS inverter utilizing 2D-TMDC which exhibits an impressive voltage gain of 7 at VDD = 5 V. Moreover, this effective polarity control approach was further expanded upon to successfully demonstrate a range of logic circuits such as AND, OR, NAND, NOR logic gates, and SRAM. The proposed methodology possesses significant promise for facilitating the advancement of high-density circuitry components utilizing 2D-TMDC.

Axl alleviates DSS-induced colitis by preventing dysbiosis of gut microbiota.

Axl is a tyrosine kinase receptor, a negative regulator for innate immune responses and inflammatory bowel disease (IBD). The gut microbiota regulates intestinal immune homeostasis, but the role of Axl in the pathogenesis of IBD through the regulation of gut microbiota composition remains unresolved. In this study, mice with DSS-induced colitis showed increased Axl expression, which was almost entirely suppressed by depleting the gut microbiota with antibiotics. Axl-/- mice without DSS administration exhibited increased bacterial loads, especially the Proteobacteria abundant in patients with IBD, significantly consistent with DSS-induced colitis mice. Axl-/- mice also had an inflammatory intestinal microenvironment with reduced antimicrobial peptides and overexpression of inflammatory cytokines. The onset of DSS-induced colitis occurred faster with an abnormal expansion of Proteobacteria in Axl-/- mice than in WT mice. These findings suggest that a lack of Axl signaling exacerbates colitis by inducing aberrant compositions of the gut microbiota in conjunction with an inflammatory gut microenvironment. In conclusion, the data demonstrated that Axl signaling could ameliorate the pathogenesis of colitis by preventing dysbiosis of gut microbiota. Therefore, Axl may act as a potential novel biomarker for IBD and can be a potential candidate for the prophylactic or therapeutic target of diverse microbiota dysbiosis-related diseases.

Association Between CLOCK Gene Variants and Restless Legs Syndrome in Koreans.

OBJECTIVE: Previous studies have suggested various causes of restless legs syndrome (RLS), including iron and dopamine concentrations in the brain. Genetic influences have also been reported in many studies. There is also a possibility that circadian clock genes may be involved because symptoms of RLS worsen at night. We investigated whether CLOCK and NPAS2 gene polymorphisms were associated with RLS. METHODS: A total of 227 patients with RLS and 229 non-RLS matched controls were assessed according to the International Restless Legs Syndrome Study Group diagnostic criteria. Genotyping was performed using reverse transcription polymerase chain reaction and high-resolution melting curve analyses. RESULTS: Although the genotype distributions of the CLOCK variants (rs1801260 and rs2412646) were not significantly different between patients with RLS and non-RLS controls, the allele frequencies of CLOCK rs1801260 showed marginally significant differences between the two groups (X2 =2.98, p=0.085). Furthermore, there was a significant difference in the distribution of CLOCK haplotypes (rs1801260-rs2412646) between patients with RLS and non-RLS controls (p=0.013). The distributions of allelic, genotypic, and haplotypic variants of NPAS2 (rs2305160 and rs6725296) were not significantly different between the two groups. CONCLUSION: Our results suggest that CLOCK variants may be associated with decreased susceptibility to RLS.

Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors.

Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe2 FETs with different metal contacts. It is found that the carrier polarity in PdSe2 FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe2. We demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter using the same channel material PdSe2 for n- and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe2-based CMOS logic circuits.

Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition.

Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance "all-PtSe2" field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe2 transforms the underlying semiconducting PtSe2 into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe2 platform. The ultrathin PtSe2 FETs with PtSe2 vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe2 vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics.

Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2.

High contact resistance (Rc) limits the ultimate potential of two-dimensional (2-D) materials for future devices. To resolve the Rc problem, forming metallic 1T phase MoS2 locally in the semiconducting 2H phase MoS2 has been successfully demonstrated to use the 1T phase as source/drain electrodes in field effect transistors (FETs). However, the long-term stability of the 1T phase MoS2 still remains as an issue. Recently, an unusual thickness-modulated phase transition from semiconducting to metallic has been experimentally observed in 2-D material PtSe2. Metallic multilayer PtSe2 and semiconducting monolayer PtSe2 can be used as source/drain electrodes and channel, respectively, in FETs. Here, we present a theoretical study on the intrinsic lower limit of Rc in the metallic-semiconducting PtSe2 heterostructure through density functional theory (DFT) combined with non-equilibrium Green's function (NEGF). Compared with Rc in the 1T-2H MoS2 heterostructure, the multilayer-monolayer PtSe2 heterostructure can offer much lower Rc due to the better capability of providing more transmission modes.