Optical rotatory power, biaxiality, and models of chiral tilted smectic phases.

Among the chiral tilted smectics, the stable existence has been confirmed in numerous investigations of SmC(*)(A), (antiferroelectric smectic-C(A)) SmC(*)(F11) (SmC(*)(gamma)), SmC(*)(F12) (antiferroelectric, AF) and SmC* phases. The structures of the ferrielectric SmC(*)(F11) and SmC(*)(F12) phases suggested by different models are essentially different although all the models use the three-layer and four-layer periodicity for them. The structures of the phases were investigated using the optical rotatory power (ORP) measurements technique. The ORP was simulated using Berreman's 4 x 4-matrix method. The compound under investigation (S)-1-methylheptyl 4-(4(')-n-undecyloxy-biphenyl-4-yl-carbonyloxy) [acronym (S)-11OF1M7] clearly provides SmC(*)(F11) and SmC(*)(F12) phases, the temperature range for the existence of these phases is about 5 degrees C each. This had not been achieved for the earlier investigated antiferroelectric liquid crystal (AFLC) samples. The results obtained confirm that the unit cell of the molecular structure of these subphases is highly biaxial. Due to the biaxiality the texture of the homeotropic cell under a polarizing microscope appears nonuniform. This requires a special approach to the measurements and a simulation of the ORP, which is discussed in detail. A technique has been designed where the transmitted intensity through a polarizing microscope is measured as a function of the angle of polarization of the incident light. From the observed output, which is a biased sine wave, the ORP is being determined. In the same scan, the wavelength of light is also being automatically altered. Comparing the simulated and measured data, we can conclude that in the SmC(*)(F12) phase the distortion angle of the directors in the Ising model is lower than 10 degrees. Using the Ising model, the pitch in SmC(*)(F11) has been determined and this is found to have a strong temperature dependence.

Orientational distributions in smectic liquid crystals showing V-shaped switching investigated by polarized Raman scattering.

Molecular orientational order parameters have been obtained by Raman scattering in two types of liquid crystal materials showing the V-shaped switching in thin homogeneous cells. One is the Mitsui mixture and the other is one component of the Inui mixture. The antiferroelectric phase exists in the bulk of both materials but, in thin homogeneous cells, the stability is distinct from each other. The obtained distribution of the local in-plane directors at the tip of the V is considerably broad in the former, while it is narrow in the latter. These differences have been explained by the barrier between the ferroelectric and antiferroelectric orderings, the chiral twisting power, and the interface induced destruction of the antiferroelectric ordering.

Dependence of the molecular orientational states on the surface conditions for the "V-shaped switching" in a ferroelectriclike liquid crystal sample.

The three-component mixture showing the V-shaped switching in a rubbing cell is investigated using a temperature gradient cell (TGC) where the epitaxial method of alignment, but without an alignment layer, is used. The molecular alignment and the switching characteristics in a TGC are compared with the rubbing sandwich and the open cells. The uniform or the twisted state is observed in the TGC, depending on the surface condition whether indium-tin oxide (ITO) or glass, while the uniformlike state with the average optical axis parallel to the smectic layer normal emerges only in the rubbing cell. The cancellation of the surface polarization charges by the surface free charges on the ITO surfaces determines the molecular alignment state in the TGC. From these results, we conclude that the nonpolar in-plane anchoring plays an important role in giving a uniformlike state in the rubbing cell.

Probable Langevin-like director reorientation in an interface-induced disordered SmC*-like state of liquid crystals characterized by frustration between ferro- and antiferroelectricity.

To clarify the thresholdless, hysteresis free V-shaped switching due to frustration between ferro- and antiferroelectricity, we have studied a prototype binary mixture system. The apparent orientational order parameters, and , obtained from polarized Raman scattering in thin homogeneous cells indicate that substrate interfaces induce some randomization of local in-plane directors at the tip of the V. Their correlation lengths, xi( parallel) approximately 3.5 nm and xi( perpendicular) approximately 75 nm, have been estimated by assuming the Langevin-like reorientation. Because of the much shorter xi(parallel) and xi(perpendicular) than the visible light wavelength, the switching process looks uniform.