Hexagonal Si-Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature.

Multi-anvil and laser-heated diamond anvil methods have been used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500-1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63 /mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of interest for optoelectronic applications.

Unconventional Route to High-Pressure and -Temperature Synthesis of GeSn Solid Solutions.

Ge and Sn are unreactive at ambient conditions. Their significant promise for optoelectronic applications is thus largely confined to thin film investigations. We sought to remove barriers to reactivity here by accessing a unique pressure, 10 GPa, where the two elements can adopt the same crystal structure (tetragonal, I41/amd) and exhibit compatible atomic radii. The route to GeSn solid solution, however, even under these directed conditions, is different. Reaction upon heating at 10 GPa occurs between unlike crystal structures (Ge, Fd3m and Sn, I4/mmm), which also have highly incompatible atomic radii. They should not react, but they do. A reconstructive transformation of I4/mmm into the I41/amd solid solution then follows. The new tetragonal GeSn solid solution (I41/amd a = 5.280(1) Å, c = 2.915(1) Å, Z = 4 at 9.9 GPa and 298 K) also constitutes the structural and electronic bridge between 4-fold and newly prepared 8-fold coordinated alloy cubic symmetries. Furthermore, using this high-pressure route, bulk cubic diamond-structured GeSn alloys can now be obtained at ambient pressure. The findings here remove confining conventional criteria on routes to synthesis. This opens innovative avenues to advanced materials development.

An Unexpected Cubic Symmetry in Group†IV Alloys Prepared Using Pressure and Temperature.

The cubic diamond (Fd 3 ‾ m) group IVA element Si has been the material driver of the electronics industry since its inception. We report synthesis of a new cubic (Im 3 ‾ m) group IVA material, a GeSn solid solution, upon heating Ge and Sn at pressures from 13 to 28 GPa using double-sided diamond anvil laser-heating and large volume press methods. Both methods were coupled with in situ angle dispersive X-ray diffraction characterization. The new material substantially enriches the seminal group IVA alloy materials landscape by introducing an eightfold coordinated cubic symmetry, which markedly expands on the conventional tetrahedrally coordinated cubic one. This cubic solid solution is formed, despite Ge never adopting the Im 3 ‾ m symmetry, melting inhibiting subsequent Im 3 ‾ m formation and reactant Ge and Sn having unlike crystal structures and atomic radii at all these pressures. This is hence achieved without adherence to conventional formation criteria and routes to synthesis. This advance creates fertile avenues for new materials development.

Creating Reactivity with Unstable Endmembers using Pressure and Temperature: Synthesis of Bulk Cubic Mg0.4 Fe0.6 N.

Alloy and nitride solid solutions are prominent for structural, energy and information processing applications. There are frequently however barriers to making them. We remove barriers to reactivity here using pressure with a new synthetic approach. We target pressures where the reasons for cubic endmember nitride instability can become the driving force for cubic nitride solid solution stability. Using this approach we form a novel rocksalt Mg0.4 Fe0.6 N solid solution at between 15 and 23 GPa and up to 2500 K. This is a system where, neither an alloy nor a nitride solid solution form at ambient conditions and bulk MgN and FeN endmembers do not form, either at ambient or at high pressure. The new nitride is formed, by removing endmember lattice mismatch with pressure, allowing a stabilizing redistribution of valence electrons upon heating. This approach can be employed for a range of normally unreactive systems. Mg, Fe and enhanced nitrogen presence, may also indicate a richer reaction chemistry in our planets interior.

Dense Si(x)Ge(1-x) (0 < x < 1) materials landscape using extreme conditions and precession electron diffraction.

High-pressure and -temperature experiments on Ge and Si mixtures to 17 GPa and 1500 K allow us to obtain extended Ge-Si solid solutions with cubic (Ia3) and tetragonal (P4(3)2(1)2) crystal symmetries at ambient pressure. The cubic modification can be obtained with up to 77 atom % Ge and the tetragonal modification for Ge concentrations above that. Together with Hume-Rothery criteria, melting point convergence is employed here as a favored attribute for solid solution formation. These compositionally tunable alloys are of growing interest for advanced transport and optoelectronic applications. Furthermore, the work illustrates the significance of employing precession electron diffraction for mapping new materials landscapes resulting from tailored high-pressure and -temperature syntheses.

Correlation between structural and semiconductor-metal changes and extreme conditions materials chemistry in Ge-Sn.

High pressure and temperature experiments on Ge-Sn mixtures to 24 GPa and 2000 K reveal segregation of Sn from Ge below 10 GPa whereas Ge-Sn agglomerates persist above 10 GPa regardless of heat treatment. At 10 GPa Ge reacts with Sn to form a tetragonal P4(3)2(1)2 Ge(0.9)Sn(0.1) solid solution on recovery, of interest for optoelectronic applications. Using electron diffraction and scanning electron microscopy measurements in conjunction with a series of tailored experiments promoting equilibrium and kinetically hindered synthetic conditions, we provide a step by step correlation between the semiconductor-metal and structural changes of the solid and liquid states of the two elements, and whether they segregate, mix or react upon compression. We identify depletion zones as an effective monitor for whether the process is moving toward reaction or segregation. This work hence also serves as a reference for interpretation of complex agglomerates and for developing successful synthesis conditions for new materials using extremes of pressure and temperature.

Synthesis of a nitrogen-stabilized hexagonal Re(3)ZnN(x) phase using high pressures and temperatures.

High pressure can induce profound changes in solids. A significant barrier to new alloys and ceramics, however, is that targeted starting materials may not react with each other, even with the help of pressure. We use nitrogen, in a new capacity, to incorporate two otherwise unreactive elements, Re and Zn, in the same structure when pressure alone does not suffice, without nitrogen altering the resulting backbone structure. Synthesis experiments up to 20 GPa and 1800 K show that while no Re-Zn alloy or solid solution is formed, a novel Re(3)ZnN(x) ordered solid solution is formed, at 20 GPa, with nitrogen occupying Re-coordinated cages. We put forth that unlike pure Re(3)Zn, our novel hexagonal Re(3)ZnN(x) structure is stabilized by nitrogen bond formation with rhenium. Pressure lifts the pronounced ambient Zn anisotropy, making it more compatible with Re and likely facilitating incorporation of the structure-stabilizing nitrogen anion. This methodology and result denote further options for removing impasses to material preparation, thus opening new avenues for synthesis. These can also be pursued with other ions including carbon, hydrogen, and oxygen, in addition to nitrogen.

Tuning between mixing and reactivity in the Ge-Sn system using pressure and temperature.

No bulk GeSn crystal existed prior to this work. Near 10 GPa the two elements resemble each other both electronically and structurally. Synthesis experiments at 10 GPa and 1500 K followed by annealing at 770 K using Ge and Sn starting materials and ex-situ analysis using transmission electron microscopy, scanning electron microscopy, and X-ray diffraction document the recovery of a Ge(0.9)Sn(0.1) solid solution (space group P4(3)2(1)2, a = 6.014 (1) A, c = 7.057 (1) A, Z = 12).