Orientation-Dependent Photoconductivity of Quasi-2D Nanocrystal Self-Assemblies: Face-Down, Edge-Up Versus Randomly Oriented Quantum Wells.

Here, strongly orientation-dependent lateral photoconductivity of a CdSe monolayer colloidal quantum wells (CQWs) possessing short-chain ligands is reported. A controlled liquid-air self-assembly technique is utilized to deliberately engineer the alignments of CQWs into either face-down (FO) or edge-up (EO) orientation on the substrate as opposed to randomly oriented (RO) CQWs prepared by spin-coating. Adapting planar configuration metal-semiconductor-metal (MSM) photodetectors, it is found that lateral conductivity spans ≈2 orders of magnitude depending on the orientation of CQWs in the film in the case of utilizing short ligands. The long native ligands of oleic acid (OA) are exchanged with short-chain ligands of 2-ethylhexane-1-thiol (EHT) to reduce the inter-platelet distance, which significantly improved the photoresponsivity from 4.16, 0.58, and 4.79 mA W-1 to 528.7, 6.17, and 94.2 mA W-1, for the MSM devices prepared with RO, FO, and EO, before and after ligands exchange, respectively. Such CQW orientation control profoundly impacts the photodetector performance also in terms of the detection speed (0.061 s/0.074 s for the FO, 0.048 s/0.060 s for the EO compared to 0.10 s/0.16 s for the RO, for the rise and decay time constants, respectively) and the detectivity (1.7 × 1010, 2.3 × 1011, and 7.5 × 1011 Jones for the FO, EO, and RO devices, respectively) which can be further tailored for the desired optoelectronic device applications. Attributed to charge transportation in colloidal films being proportional to the number of hopping steps, these findings indicate that the solution-processed orientation of CQWs provides the ability to tune the photoconductivity of CQWs with short ligands as another degree of freedom to exploit and engineer their absorptive devices.

"Giant" Colloidal Quantum Well Heterostructures of CdSe@CdS Core@Shell Nanoplatelets from 9.5 to 17.5 Monolayers in Thickness Enabling Ultra-High Gain Lasing.

Semiconductor colloidal quantum wells (CQWs) have emerged as a promising class of gain materials to be used in colloidal lasers. Although low gain thresholds are achieved, the required high gain coefficient levels are barely met for the applications of electrically-driven lasers which entails a very thin gain matrix to avoid charge injection limitations. Here, "giant" CdSe@CdS colloidal quantum well heterostructures of 9.5 to 17.5 monolayers (ML) in total with corresponding vertical thickness from 3.0 to 5.8 nm that enable record optical gain is shown. These CQWs achieve ultra-high material gain coefficients up to ≈140 000 cm-1 , obtained by systematic variable stripe length (VSL) measurements and independently validated by transient absorption (TA) measurements, owing to their high number of states. This exceptional gain capacity is an order of magnitude higher than the best levels reported for the colloidal quantum dots. From the dispersion of these quantum wells, low threshold amplified spontaneous emission in water providing an excellent platform for optofluidic lasers is demonstrated. Also, employing these giant quantum wells, whispering gallery mode (WGM) lasing with an ultra-low threshold of 8 µJ cm-2 is demonstrated. These findings indicate that giant CQWs offer an exceptional platform for colloidal thin-film lasers and in-solution lasing applications.

Vertically oriented self-assembly of colloidal CdSe/CdZnS quantum wells controlled via hydrophilicity/lipophilicity balance: optical gain of quantum well stacks for amplified spontaneous emission and random lasing.

We propose and demonstrate vertically oriented self-assembly of colloidal quantum wells (CQWs) that allows for stacking CdSe/CdZnS core/shell CQWs in films for the purposes of amplified spontaneous emission (ASE) and random lasing. Here, a monolayer of such CQW stacks is obtained via liquid-air interface self-assembly (LAISA) in a binary subphase by controlling the hydrophilicity/lipophilicity balance (HLB), a critical factor for maintaining the orientation of CQWs during their self-assembly. Ethylene glycol, as a hydrophilic subphase, orients the coalition of these CQWs into self-assembled multi-layers in the vertical direction. Stacking CQWs into large micron-sized areas as a monolayer is facilitated by adjusting HLB with diethylene glycol addition as a more lyophilic subphase during LAISA. ASE was observed from the resulting multi-layered CQW stacks prepared via sequential deposition onto the substrate by applying the Langmuir-Schaefer transfer method. Random lasing was achieved from a single self-assembled monolayer of the vertically oriented CQWs. Here, highly rough surfaces resulting from the non-close packing nature of the CQW stack films cause strongly thickness-dependent behavior. We observed that in general a higher roughness-to-thickness ratio of the CQW stack films (e.g., thinner films that are intrinsically rough enough) leads to random lasing, while it is possible to observe ASE only in thick enough films even if their roughness is relatively higher. These findings indicate that the proposed bottom-up technique can be used to construct thickness-tunable, three-dimensional CQW superstructures for fast, low-cost, and large-area fabrication.

On the Rational Design of Core/(Multi)-Crown Type-II Heteronanoplatelets.

Solution-processed two-dimensional nanoplatelets (NPLs) allowing lateral growth of a shell (crown) by not affecting the pure confinement in the vertical direction provide unprecedented opportunities for designing heterostructures for light-emitting and -harvesting applications. Here, we present a pathway for designing and synthesizing colloidal type-II core/(multi-)crown hetero-NPLs and investigate their optical properties. Stoke's shifted broad photoluminescence (PL) emission and long PL lifetime (∼few 100 ns) together with our wavefunction calculations confirm the type-II electronic structure in the synthesized CdS/CdSe1-xTex core/crown hetero-NPLs. In addition, we experimentally obtained the band-offsets between CdS, CdTe, and CdSe in these NPLs. These results helped us designing hetero-NPLs with near-unity PL quantum yield in the CdSe/CdSe1-xTex/CdSe/CdS core/multicrown architecture. These core/multicrown hetero-NPLs have two type-II interfaces unlike traditional type-II NPLs having only one and possess a CdS ending layer for passivation and efficient suppression of stacking required for optoelectronic applications. The light-emitting diode (LED) obtained using multicrown hetero-NPLs exhibits a maximum luminance of 36,612 cd/m2 and external quantum efficiency of 9.3%, which outcompetes the previous best results from type-II NPL-based LEDs. These findings may enable designs of future advanced heterostructures of NPLs which are anticipated to show desirable results, especially for LED and lasing platforms.

Highly-Directional, Highly-Efficient Solution-Processed Light-Emitting Diodes of All-Face-Down Oriented Colloidal Quantum Well Self-Assembly.

Semiconductor colloidal quantum wells (CQWs) provide anisotropic emission behavior originating from their anisotropic optical transition dipole moments (TDMs). Here, solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) of a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that collectively enable a supreme level of IP TDMs at 92% in the ensemble emission are shown. This significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) in the LED. As a result, the external quantum efficiency reaches a record high level of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. This SAM-CQW-LED architecture allows for a high maximum brightness of 19,800 cd m-2 with a long operational lifetime of 247 h at 100 cd m-2 as well as a stable saturated deep-red emission (651 nm) with a low turn-on voltage of 1.7 eV at a current density of 1 mA cm-2 and a high J90 of 99.58 mA cm-2 . These findings indicate the effectiveness of oriented self-assembly of CQWs as an electrically-driven emissive layer in improving outcoupling and external quantum efficiencies in the CQW-LEDs.

High External Quantum Efficiency Light-Emitting Diodes Enabled by Advanced Heterostructures of Type-II Nanoplatelets.

Colloidal quantum wells (CQWs), also known as nanoplatelets (NPLs), are exciting material systems for numerous photonic applications, including lasers and light-emitting diodes (LEDs). Although many successful type-I NPL-LEDs with high device performance have been demonstrated, type-II NPLs are not fully exploited for LED applications, even with alloyed type-II NPLs with enhanced optical properties. Here, we present the development of CdSe/CdTe/CdSe core/crown/crown (multi-crowned) type-II NPLs and systematic investigation of their optical properties, including their comparison with the traditional core/crown counterparts. Unlike traditional type-II NPLs such as CdSe/CdTe, CdTe/CdSe, and CdSe/CdSexTe1-x core/crown heterostructures, here the proposed advanced heterostructure reaps the benefits of having two type-II transition channels, resulting in a high quantum yield (QY) of 83% and a long fluorescence lifetime of 73.3 ns. These type-II transitions were confirmed experimentally by optical measurements and theoretically using electron and hole wave function modeling. Computational study shows that the multi-crowned NPLs provide a better-distributed hole wave function along the CdTe crown, while the electron wave function is delocalized in the CdSe core and CdSe crown layers. As a proof-of-concept demonstration, NPL-LEDs based on these multi-crowned NPLs were designed and fabricated with a record high external quantum efficiency (EQE) of 7.83% among type-II NPL-LEDs. These findings are expected to induce advanced designs of NPL heterostructures to reach a fascinating level of performance, especially in LEDs and lasers.

Gradient Type-II CdSe/CdSeTe/CdTe Core/Crown/Crown Heteronanoplatelets with Asymmetric Shape and Disproportional Excitonic Properties.

Characterized by their strong 1D confinement and long-lifetime red-shifted emission spectra, colloidal nanoplatelets (NPLs) with type-II electronic structure provide an exciting ground to design complex heterostructures with remarkable properties. This work demonstrates the synthesis and optical characterization of CdSe/CdSeTe/CdTe core/crown/crown NPLs having a step-wise gradient electronic structure and disproportional wavefunction distribution, in which the excitonic properties of the electron and hole can be finely tuned through adjusting the geometry of the intermediate crown. The first crown with staggered configuration gives rise to a series of direct and indirect transition channels that activation/deactivation of each channel is possible through wavefunction engineering. Moreover, these NPLs allow for switching between active channels with temperature, where lattice contraction directly affects the electron-hole (e-h) overlap. Dominated by the indirect transition channels over direct transitions, the lifetime of the NPLs starts to increase at 9 K, indicative of low dark-bright exciton splitting energy. The charge transfer states from the two type-II interfaces promote a large number of indirect transitions, which effectively increase the absorption of low-energy photons critical for nonlinear properties. As a result, these NPLs demonstrate exceptionally high two-photon absorption cross-sections with the highest value of 12.9 × 106 GM and superlinear behavior.

Observation of optical gain from aqueous quantum well heterostructures in water.

Although achieving optical gain using aqueous solutions of colloidal nanocrystals as a gain medium is exceptionally beneficial for bio-optoelectronic applications, the realization of optical gain in an aqueous medium using solution-processed nanocrystals has been extremely challenging because of the need for surface modification to make nanocrystals water dispersible while still maintaining their gain. Here, we present the achievement of optical gain in an aqueous medium using an advanced architecture of CdSe/CdS@CdxZn1-xS core/crown@gradient-alloyed shell colloidal quantum wells (CQWs) with an ultralow threshold of ∼3.4 µJ cm-2 and an ultralong gain lifetime of ∼2.6 ns. This demonstration of optical gain in an aqueous medium is a result of the carefully heterostructured CQWs having large absorption cross-section and gain cross-section in addition to inherently slow Auger recombination in these CQWs. Furthermore, we show low-threshold in-water amplified spontaneous emission (ASE) from these aqueous CQWs with a threshold of 120 µJ cm-2. In addition, we demonstrate a whispering gallery mode laser with a low threshold of ∼30 µJ cm-2 obtained by incorporating films of CQWs by exploiting layer-by-layer approach on a fiber. The observation of low-threshold optical gain with ultralong gain lifetime presents a significant step toward the realization of advanced optofluidic colloidal lasers and their continuous-wave pumping.

All-colloidal parity-time-symmetric microfiber lasers balanced between the gain of colloidal quantum wells and the loss of colloidal metal nanoparticles.

Lasers based on semiconductor colloidal quantum wells (CQWs) have attracted wide attention, thanks to their facile solution-processability, low threshold and wide range spectral tunability. Colloidal microlasers based on whispering-gallery-mode (WGM) resonators have already been widely demonstrated. However, due to their microscale size typically supporting multiple modes, they suffer from multimode competition and higher threshold. The ability to control the multiplicity of modes oscillating within colloidal laser resonators and achieving single-mode lasers is of fundamental importance in many photonic applications. Here we show that as a unique, simple and versatile architecture of all-colloidal lasers intrinsically enabled by balanced gain/loss segments, the lasing threshold reduction and spectral purification can be readily achieved in a system of a WGM-supported microfiber cavity by harnessing the notions of parity-time symmetry (PT). In particular, we demonstrate a proof-of-concept PT-symmetric microfiber laser employing CQWs as the colloidal gain medium along with a carefully tuned nanocomposite of Ag nanoparticles (Ag NPs) incorporated into a PMMA matrix altogether and conveniently coated around a coreless microfiber as a rigorously tailored colloidal loss medium to balance the gain. The realization of gain/loss segments in our PT-symmetric all-colloidal arrangement is independent of selected pumping, reducing the complexity of the system and making compact device applications feasible, where control over the pumping is not possible. We observed a reduction in the number of modes, resulting in a reduced threshold and enhanced output power of the PT-symmetric laser. The PT-symmetric CQW-WGM microcavity architecture offers new opportunities towards simple implementation of high-performance optical resonators for colloidal lasers.

High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics.

Colloidal quantum wells (CQWs) have emerged as a promising family of two-dimensional (2D) optoelectronic materials with outstanding properties, including ultranarrow luminescence emission, nearly unity quantum yield, and large extinction coefficient. However, the performance of CQWs-based light-emitting diodes (CQW-LEDs) is far from satisfactory, particularly for deep red emissions (≥660 nm). Herein, high efficiency, ultra-low-efficiency roll-off, high luminance, and extremely saturated deep red CQW-LEDs are reported. A key feature for the high performance is the understanding of charge dynamics achieved by introducing an efficient electron transport layer, ZnMgO, which enables balanced charge injection, reduced nonradiative channels, and smooth films. The CQW-LEDs based on (CdSe/CdS)@(CdS/CdZnS) ((core/crown)@(colloidal atomic layer deposition shell/hot injection shell)) show an external quantum efficiency of 9.89%, which is a record value for 2D nanocrystal LEDs with deep red emissions. The device also exhibits an ultra-low-efficiency roll-off and a high luminance of 3853 cd m-2. Additionally, an exceptional color purity with the CIE coordinates of (0.719, 0.278) is obtained, indicating that the color gamut covers 102% of the International Telecommunication Union Recommendation BT 2020 (Rec. 2020) standard in the CIE 1931 color space, which is the best for CQW-LEDs. Furthermore, an active-matrix CQW-LED pixel circuit is demonstrated. The findings imply that the understanding of charge dynamics not only enables high-performance CQW-LEDs and can be further applied to other kinds of nanocrystal LEDs but also is beneficial to the development of CQW-LEDs-based display technology and related integrated optoelectronics.

Plasmon-enhanced photoresponse of single silver nanowires and their network devices.

The photo-bolometric effect is critically important in optoelectronic structures and devices employing metallic electrodes with nanoscale features due to heating caused by the plasmonic field enhancement. One peculiar case is individual silver nanowires (Ag NWs) and their networks. Ag NW-networks exhibit excellent thermal, electrical, and mechanical properties, providing a simple yet reliable alternative to common flexible transparent electrode materials used in optoelectronic devices. To date, there have been no reports on the photoresponse of Ag NWs. In this study, we show that single Ag NWs and networks of such Ag NWs possess a significant, intrinsic photoresponse, thanks to the photo-bolometric effect, as directly observed and measured using scanning photocurrent microscopy. Surface plasmon polaritons (SPPs) created at the contact metals or plasmons created at the nanowire-metal structures cause heating at the junctions where a plasmonic field enhancement is possible. The local heating of the Ag NWs results in negative photoconductance due to the bolometric effect. Here an open-circuit response due to the plasmon-enhanced Seebeck effect was recorded at the NW-metal contact junctions. The SPP-assisted bolometric effect is found to be further enhanced by decorating the Ag NWs with Ag nanoparticles. These observations are relevant to the use of metallic nanowires in plasmonic applications in particular and in optoelectronics in general. Our findings may pave the path for plasmonics-enabled sensing without spectroscopic detection.

Deep-Red-Emitting Colloidal Quantum Well Light-Emitting Diodes Enabled through a Complex Design of Core/Crown/Double Shell Heterostructure.

Extending the emission peak wavelength of quasi-2D colloidal quantum wells has been an important quest to fully exploit the potential of these materials, which has not been possible due to the complications arising from the partial dissolution and recrystallization during growth to date. Here, the synthetic pathway of (CdSe/CdS)@(1-4 CdS/CdZnS) (core/crown)@(colloidal atomic layer deposition shell/hot injection shell) hetero-nanoplatelets (NPLs) using multiple techniques, which together enable highly efficient emission beyond 700 nm in the deep-red region, is proposed and demonstrated. Given the challenges of using conventional hot injection procedure, a method that allows to obtain sufficiently thick and passivated NPLs as the seeds is developed. Consequently, through the final hot injection shell coating, thick NPLs with superior optical properties including a high photoluminescence quantum yield of 88% are achieved. These NPLs emitting at 701 nm exhibit a full-width-at-half-maximum of 26 nm, enabled by the successfully maintained quasi-2D shape and minimum defects of the resulting heterostructure. The deep-red light-emitting diode (LED) device fabricated with these NPLs has shown to yield a high external quantum efficiency of 6.8% at 701 nm, which is on par with other types of LEDs in this spectral range.

Near-Field Energy Transfer into Silicon Inversely Proportional to Distance Using Quasi-2D Colloidal Quantum Well Donors.

Silicon is the most prevalent material system for light-harvesting applications; however, its inherent indirect bandgap and consequent weak absorption limits its potential in optoelectronics. This paper proposes to address this limitation by combining the sensitization of silicon with extraordinarily large absorption cross sections of quasi-2D colloidal quantum well nanoplatelets (NPLs) and to demonstrate excitation transfer from these NPLs to bulk silicon. Here, the distance dependency, d, of the resulting Förster resonant energy transfer from the NPL monolayer into a silicon substrate is systematically studied by tuning the thickness of a spacer layer (of Al2 O3 ) in between them (varied from 1 to 50 nm in thickness). A slowly varying distance dependence of d-1 with 25% efficiency at a donor-acceptor distance of 20 nm is observed. These results are corroborated with full electromagnetic solutions, which show that the inverse distance relationship emanates from the delocalized electric field intensity across both the NPL layer and the silicon because of the excitation of strong in-plane dipoles in the NPL monolayer. These findings pave the way for using colloidal NPLs as strong light-harvesting donors in combination with crystalline silicon as an acceptor medium for application in photovoltaic devices and other optoelectronic platforms.

Self-Resonant Microlasers of Colloidal Quantum Wells Constructed by Direct Deep Patterning.

Here, the first account of self-resonant fully colloidal µ-lasers made from colloidal quantum well (CQW) solution is reported. A deep patterning technique is developed to fabricate well-defined high aspect-ratio on-chip CQW resonators made of grating waveguides and in-plane reflectors. The fabricated waveguide-coupled laser, enabling tight optical confinement, assures in-plane lasing. CQWs of the patterned layers are closed-packed with sharp edges and residual-free lifted-off surfaces. Additionally, the method is successfully applied to various nanoparticles including colloidal quantum dots and metal nanoparticles. It is observed that the patterning process does not affect the nanocrystals (NCs) immobilized in the attained patterns and the different physical and chemical properties of the NCs remain pristine. Thanks to the deep patterning capability of the proposed method, patterns of NCs with subwavelength lateral feature sizes and micron-scale heights can possibly be fabricated in high aspect ratios.

Ultrahigh Green and Red Optical Gain Cross Sections from Solutions of Colloidal Quantum Well Heterostructures.

We demonstrate amplified spontaneous emission (ASE) in solution with ultralow thresholds of 30 µJ/cm2 in red and of 44 µJ/cm2 in green from engineered colloidal quantum well (CQW) heterostructures. For this purpose, CdSe/CdS core/crown CQWs, designed to hit the green region, and CdSe/CdS@CdxZn1-xS core/crown@gradient-alloyed shell CQWs, further tuned to reach the red region by shell alloying, were employed to achieve high-performance ASE in the visible range. The net modal gain of these CQWs reaches 530 cm-1 for the green and 201 cm-1 for the red, 2-3 orders of magnitude larger than those of colloidal quantum dots (QDs) in solution. To explain the root cause for ultrahigh gain coefficient in solution, we show for the first time that the gain cross sections of these CQWs is ≥3.3 × 10-14 cm2 in the green and ≥1.3 × 10-14 cm2 in the red, which are two orders of magnitude larger compared to those of CQDs.