Anomalous charge transport in reduced graphene oxide films on a uniaxially strained elastic substrate.

We investigate temperature-dependent charge transport in reduced graphene oxide (rGO) films coated on flexible polydimethylsiloxane (PDMS) substrates which are subject to uniaxial strain. Variable strain, up to 10%, results in an anisotropic morphology comprising of quasi-periodic linear array of deformations which are oriented perpendicular to the direction of strain. The anisotropy is reflected in the charge transport measurements, when conduction in the direction parallel and perpendicular to the applied strain are compared. Temperature dependence of resistance is measured for different values of strain in the temperature interval 80-300 K. While the resistance increases significantly upon application of strain, the temperature-dependent response shows anomalous decrease in resistance ratio R 80 K/R 300 K upon application of strain. This observation of favorable conduction processes under strain is further corroborated by reduced activation energy analysis of the temperature-dependent transport data. These anomalous transport features can be reconciled based on mutually competing effects of two processes: (i) thinning of graphene at the sites of periodic deformations, which tends to enhance the overall resistance by a purely geometrical effect, and (ii) locally enhanced inter-flake coupling in these same regions which contributes to improved temperature-dependent conduction.

Estimating the thermal expansion coefficient of graphene: the role of graphene-substrate interactions.

The temperature-dependent thermal expansion coefficient of graphene is estimated for as-grown chemical vapor deposited graphene using temperature-dependent Raman spectroscopy. For as-grown graphene on copper, the extent of thermal expansion mismatch between substrate and the graphene layer is significant across the entire measured temperature interval, T = 90-300 K. This mismatch induces lattice strain in graphene. However, graphene grown on copper substrates has a unique morphology in the form of quasi-periodic nanoripples. This crucially influences the profile of the strain in the graphene membrane, which is uniaxial. An estimate of the thermal expansion coefficient of grapheme α(T) is obtained after consideration of this strain profile and after incorporating temperature-dependent Grüneisen parameter corrections. The value of α(T), is found to be negative (average value, -3.75 × 10(-6) K(-1)) for the entire temperature range and it approaches close to zero for T < 150 K. For graphene wet-transferred to three kinds of substrates: copper, poly-dimethylsiloxane, and SiO2/Si, the Raman shifts can largely be modeled with lattice expansion and anharmonic contributions, and the data suggests limited interfacial interaction with the substrate.

Mechanical tearing of graphene on an oxidizing metal surface.

Graphene, the thinnest possible anticorrosion and gas-permeation barrier, is poised to transform the protective coatings industry for a variety of surface applications. In this work, we have studied the structural changes of graphene when the underlying copper surface undergoes oxidation upon heating. Single-layer graphene directly grown on a copper surface by chemical vapour deposition was annealed under ambient atmosphere conditions up to 400 °C. The onset temperature of the surface oxidation of copper is found to be higher for graphene-coated foils. Parallel arrays of graphene nanoripples are a ubiquitous feature of pristine graphene on copper, and we demonstrate that these form crucial sites for the onset of the oxidation of copper, particularly for ∼0.3-0.4 µm ripple widths. In these regions, the oxidation proceeds along the length of the nanoripples, resulting in the formation of parallel stripes of oxidized copper regions. We demonstrate from temperature-dependent Raman spectroscopy that the primary defect formation process in graphene involves boundary-type defects rather than vacancy or sp(3)-type defects. This observation is consistent with a mechanical tearing process that splits graphene into small polycrystalline domains. The size of these is estimated to be sub-50 nm.