Electro-optic fs pulsed laser deflection in KTN crystals using UV illumination.

UV-illuminated, paraelectric-phased potassium tantalate niobate (KTN) single crystals mitigate the beam deformation effects of femtosecond pulsed lasers in KTN deflectors. UV light illumination can control the amount of trapped charge present and minimize domain inversion in KTN deflectors, owing to its generated electron-hole pairs. This enables high beam quality deflection of fs pulsed lasers, with access to larger deflection angles, deflection speeds, and modulation switching ratios. These results enable the use of KTN deflectors in many fs pulsed laser applications and hasten the advancement of fs applications that require these deflection qualities.

Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches.

We report a new, to the best of our knowledge, type of SI-GaAs photoconductive semiconductor switch (PCSS) with nanostructures. Since light can enter from both the top and side surfaces of nanostructures, the effective penetration depth is significantly increased. Lower on-state resistance and a longer lock-on time have been achieved in the nonlinear mode with this design, as well as a lower triggering fluence in the linear mode. This could be highly useful for a variety of applications that require lower on-state resistance and/or longer lock-on time such as pulsed power systems and firing set switches.

Anomalous bi-directional scanning electro-optic KTN devices with UV-assisted electron and hole injections.

In this Letter, we reported anomalous electro-optic potassium tantalate niobate (KTN) devices, in which both electrons and holes were injected into the KTN crystal via ultraviolet (UV) illumination-assisted charge injection. This could not only significantly enhance the performance of electro-optic devices (e.g., a 270% increase in the deflection angle in terms of the KTN deflector) but also enable the new bi-directional scanning capability. The results in this work would be very useful for a variety of devices and applications, such as electro-optic based vari-focal lenses.

Analysis on the electric field distribution in a relaxor ferroelectric KTN crystal near field-induced phase transition using optical deflection measurements.

Spatially analyzing non-uniform distributions of electric phenomena such as electric field and permittivity in ferroelectric devices is very challenging. In this study, we apply an optical beam deflection method to map the non-uniform electric phenomena in relaxor ferroelectric potassium tantalate niobate (KTN) crystals. To adequately correlate the physical parameters and their spatial distributions in KTN crystals, a general model that describes the giant electro-optic response and associated beam deflection is derived. The proposed model is in good agreement with the experimental results and is envisioned to be useful for analyzing electric field-induced phenomena in non-linear dielectric materials and devices.

Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity.

Most applications of a ferroelectric-based electro-optic (EO) beam deflector have been limited by the high applied voltage. In this Letter, we report a dramatically increased EO beam deflection in relaxor ferroelectric potassium tantalate niobate (KTN) crystals by using the electric-field-enhanced permittivity. Due to the existence of the electric-field-induced phase transition in relaxor ferroelectric materials, the dielectric permittivity can be substantially increased by the applied electric field at a certain temperature. Both the theoretical study and the experimental verifications on the enhanced beam deflection and EO effect in the case with the electric-field-induced high permittivity were conducted. The experimental results confirmed that there was a three-fold increase in the deflection angle, which represented a dramatic increase in the deflection angle. By offering a wider deflection range and a lower driving voltage, such a largely enhanced beam deflection is of great benefit to the KTN deflector.

Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity: publisher's note.

This publisher's note contains corrections to Opt. Lett.44, 5557 (2019)OPLEDP0146-959210.1364/OL.44.005557.

Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch.

We report a new type of photoconductive semiconductor switch (PCSS), consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal. The 532 nm laser pulses from an Nd-YAG laser incident on the front surface of the ruby crystal. A portion of the laser pulse passes through the crystal and reaches the GaAs substrate, and the remaining portion of the laser pulse is absorbed by the ruby crystal. This results in the emission of 694 nm fluorescent light. Furthermore, a portion of emitted fluorescent light also reaches the GaAs substrate. The high-fluence 532 nm short laser pulse with a pulse width around several nanoseconds is used to trigger the PCSS entering the high-gain nonlinear mode, whereas the low-fluence long-lifetime (on the order of a millisecond) 694 nm fluorescent light is used to maintain the lock-on time. Thus, an ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock-on time of high-gain GaAs PCSS.