Constructed languages are processed by the same brain mechanisms as natural languages.

What constitutes a language? Natural languages share some features with other domains: from math, to music, to gesture. However, the brain mechanisms that process linguistic input are highly specialized, showing little or no response to diverse non-linguistic tasks. Here, we examine constructed languages (conlangs) to ask whether they draw on the same neural mechanisms as natural languages, or whether they instead pattern with domains like math and logic. Using individual-subject fMRI analyses, we show that understanding conlangs recruits the same brain areas as natural language comprehension. This result holds for Esperanto (n=19 speakers)- created to resemble natural languages-and fictional conlangs (Klingon (n=10), Na'vi (n=9), High Valyrian (n=3), and Dothraki (n=3)), created to differ from natural languages, and suggests that conlangs and natural languages share critical features and that the notable differences between conlangs and natural language are not consequential for the cognitive and neural mechanisms that they engage.

High resolution magnetic field measurements in hydrogen and helium plasmas using active laser spectroscopy.

Passive spectroscopic measurements of Zeeman splitting have been used reliably to measure magnetic fields in plasmas for decades. However, a requirement is that the field magnitude must be sufficiently strong to be resolved over Doppler and instrument broadening (typically >10 000 G). A diagnostic for measuring magnetic fields spectroscopically well below this limit (>20 G) with high sensitivity has been developed at the Oak Ridge National Laboratory. The diagnostic relies on measuring a high resolution spectral profile using Doppler-free saturation spectroscopy (DFSS) and then fitting the spectrum to a quantum mechanical model. DFSS is an active, laser based technique that greatly reduces the influence of Doppler broadening and eliminates instrument broadening. To date, the diagnostic has been successfully employed to measure the magnetic field in magnetized (550-900 G), low-temperature (5-10 eV), low-density (1010-1012 cm-3), hydrogen and helium plasmas in the 5-200 mTorr pressure range using a low power (25 mW) diode laser. Implementing an approximate crossover resonance model, the measurements are shown to be accurate within 5 G for helium and 83 G for hydrogen. The accuracy in hydrogen can be improved to 39 G if the crossover resonances are neglected. A more robust crossover model can decrease this error to <1 G.

Size Dependence of Nanoscale Wear of Silicon Carbide.

Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native oxide layers. We discovered a transition in the relative wear resistance of the SiC samples compared to that of Si as a function of contact size. With larger nanoindenter tips (tip radius ≈ 370 nm), the wear resistances of both sc-SiC and nc-SiC are higher than that of Si. This result is expected from the Archard's equation because SiC is harder than Si. However, with the smaller AFM tips (tip radius ≈ 20 nm), the wear resistances of sc-SiC and nc-SiC are lower than that of Si, despite the fact that the contact pressures are comparable to those applied with the nanoindenter tips, and the plastic zones are well-developed in both sets of wear experiments. We attribute the decrease in the relative wear resistance of SiC compared to that of Si to a transition from a wear regime dominated by the materials' resistance to plastic deformation (i.e., hardness) to a regime dominated by the materials' resistance to interfacial shear. This conclusion is supported by our AFM studies of wearless friction, which reveal that the interfacial shear strength of SiC is higher than that of Si. The contributions of surface roughness and surface chemistry to differences in interfacial shear strength are also discussed.

All The Catalytic Active Sites of MoS2 for Hydrogen Evolution.

MoS2 presents a promising low-cost catalyst for the hydrogen evolution reaction (HER), but the understanding about its active sites has remained limited. Here we present an unambiguous study of the catalytic activities of all possible reaction sites of MoS2, including edge sites, sulfur vacancies, and grain boundaries. We demonstrate that, in addition to the well-known catalytically active edge sites, sulfur vacancies provide another major active site for the HER, while the catalytic activity of grain boundaries is much weaker. The intrinsic turnover frequencies (Tafel slopes) of the edge sites, sulfur vacancies, and grain boundaries are estimated to be 7.5 s-1 (65-75 mV/dec), 3.2 s-1 (65-85 mV/dec), and 0.1 s-1 (120-160 mV/dec), respectively. We also demonstrate that the catalytic activity of sulfur vacancies strongly depends on the density of the vacancies and the local crystalline structure in proximity to the vacancies. Unlike edge sites, whose catalytic activity linearly depends on the length, sulfur vacancies show optimal catalytic activities when the vacancy density is in the range of 7-10%, and the number of sulfur vacancies in high crystalline quality MoS2 is higher than that in low crystalline quality MoS2, which may be related with the proximity of different local crystalline structures to the vacancies.