Al0.1Ga0.9N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown.

We report high-performance Al0.1Ga0.9N p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with stable breakdown voltages (VBR) around 113.4 V, low dark current densities (JBR) below 9 × 10-4 A/cm2 and a high avalanche gain over 2 × 106. A two-step deposition method was employed to reduce passivation-induced plasma damage while maintaining high dielectric film quality. Consistent JBR for various mesa sizes at the VBR are demonstrated, which reveals the suppression of the surface leakage current. Uniform electroluminescence (EL) distributions during the avalanche multiplication processes are displayed, which confirms the elimination of edge breakdown. Pure bulk leakage current distributions and uniform body avalanche breakdown behaviors are observed for the first time in AlGaN APDs. The emission spectra of the EL at various current levels are also presented.

GaN/Ga2O3 avalanche photodiodes with separate absorption and multiplication structure.

This article proposes a new, to the best of our knowledge, separate absorption and multiplication (SAM) APD based on GaN/ß-Ga2O3 heterojunction with high gains. The proposed APD achieved a high gain of 1.93 × 104. We further optimized the electric field distribution by simulating different doping concentrations and thicknesses of the transition region, resulting in the higher avalanche gain of the device. Furthermore, we designed a GaN/ß-Ga2O3 heterojunction instead of the single Ga2O3 homogeneous layer as the multiplication region. Owing to the higher hole ionization coefficient, the device offers up to a 120% improvement in avalanche gain reach to 4.24 × 104. We subsequently clearly elaborated on the working principle and gain mechanism of GaN/ß-Ga2O3 SAM APD. The proposed structure is anticipated to provide significant guidance for ultraweak ultraviolet light detection.

Forsythia suspensa (Thunb.) Vahl extract ameliorates ulcerative colitis via inhibiting NLRP3 inflammasome activation through the TLR4/MyD88/NF-κB pathway.

BACKGROUND: Ulcerative colitis (UC), a chronic inflammatory disease, is caused by abnormal immune system reactions resulting in inflammation and ulcers in the large intestine. Phillygenin (PHI) is a natural compound found in Forsythia suspensa (Thunb.) Vahl, which is known for its antipyretic, anti-inflammatory, antiobesity, and other biological activities. However, the therapeutic role and molecular mechanisms of PHI on UC are still insufficiently researched. METHODS: In this study, dextran sulfate sodium (DSS) and 2.5% 2,4,6-trinitro-Benzenesulfonic acid (TNBS)-induced acute UC were used to investigate the therapeutic effects of PHI. We evaluated the effects of PHI on disease activity index (DAI), body weight, mortality, intestinal mucosal barrier, cytokine secretion, and macrophage infiltration into colon tissue using various techniques such as flow cytometry, immunofluorescence, enzyme-linked immunosorbent assay (ELISA), RT-qPCR, and Western blot analysis. RESULTS: Our findings revealed that PHI has therapeutic properties in UC treatment. PHI was able to maintain body weight, reduce DAI and mortality, restore the intestinal mucosal barrier, and inhibit cytokine secretion. Flow cytometry assay and immunofluorescence indicated that PHI reduces macrophage infiltration into colon tissue. Mechanistically, PHI may exert anti-inflammatory effects by downregulating the TLR4/MyD88/NF-κB pathway and inhibiting the activation of NLRP3 inflammasome. CONCLUSION: In conclusion, PHI possesses significant anti-inflammatory properties and is expected to be a potential drug for UC treatment. Our study delves into the underlying mechanisms of PHI therapy and highlights the potential for further research in developing PHI-based treatments for UC.

Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel junctions based on MXene Cr2C.

The discovery of two-dimensional (2D) magnetic materials makes it possible to realize in-plane magnetic tunnel junctions. In this study, the transport characteristics of an in-plane double barrier magnetic tunnel junction (IDB-MTJ) based on Cr2C have been studied by density functional theory combined with the nonequilibrium Green's function method. The results showed its maximum tunneling magnetoresistance ratio (TMR) value reached 6.58 × 1010. Its minimum TMR value (3.86 × 106) was also comparable to those of conventional field effect transistors (FETs). Due to its giant TMR and unique structural characteristics, the IDB-MTJ based on Cr2C has great potential applications in magnetic random access memory (MRAM) and logic computing.

Enhanced Thermoelectric Properties of Coated Vanadium Oxynitride Nanoparticles/PEDOT:PSS Hybrid Films.

Thermoelectric (TE) materials transform thermal energy into electricity, which can play an important role for global sustainability. Conducting polymers are suitable for the preparation of flexible TE materials because of their low-cost, lightweight, flexible, and easily synthesized properties. Here, we fabricate organic-inorganic hybrids by combining vanadium oxynitride nanoparticles coated with nitrogen-doped carbon (NC@VNO) and poly(3,4-ethylenedioxy thiophene):poly(styrene sulfonate) (PEDOT:PSS). We find that the electrical conductivity, Seebeck coefficient, and power factor of the NC@VNO/PEDOT:PSS film can be enhanced up to 4158 S/cm, 45.8 µV/K, and 873 µW/mK2 at 380 K, respectively. The large enhancement of the power factor may be due to the facilitation of the interfacial charge transport tunnel between the NC@VNO nanoparticles and PEDOT:PSS. The improvement of the Seebeck coefficient may be due to the energy filter effect as induced by interfacial contact and internal electric field between the NC@VNO nanoparticles and PEDOT:PSS. Our measurement suggests that the high binding energy of pyrrolic-N enhances the Seebeck coefficient, and the high binding energy of oxide-N increases electrical conductivity.

Tunable tunneling magnetoresistance in in-plane double barrier magnetic tunnel junctions based on B vacancy h-NB nanoribbons.

Magnetic tunnel junctions (MTJs) have attained new opportunities due to the emergence of two-dimensional (2D) magnetic materials after they were proposed more than forty years ago. Here, an in-plane double barrier magnetic tunnel junction (IDB-MTJ) based on B vacancy h-NB nanoribbons has been proposed firstly, and the transport properties have been studied using density functional theory combined with the nonequilibrium Green's function method. Due to its unique structural characteristics, the tunneling magnetoresistance (TMR) ratio can be tuned and the maximum TMR can reach 1.86 × 105. The potential applications of the IDB-MTJ in magnetic random-access memories and logical computation have also been discussed. We find that the IDB-MTJs have great potential in magnetic random-access memories and logical computation applications.

Nanoplasmonically Enhanced High-Performance Metastable Phase α-Ga2O3 Solar-Blind Photodetectors.

In this work, nanoplasmonically enhanced α-Ga2O3 solar-blind photodetectors with an interdigital structure were fabricated on sapphire. By introducing Al nanoparticles (NPs) onto the device surface, the photodetector obtained a significant increase in responsivity at the solar-blind region, and the response peak located at 244 nm reached 3.36 A/W under an applied voltage of 5 V. Compared with the responsivity at 320 nm, the response ratio exceeds 240, demonstrating a superior solar-blind cut-off edge. It also presents that the photocurrent was dramatically increased under 254 nm ultraviolet irradiation for the enhanced device while the dark current remains below 1 pA at 20 V. To explicitly elucidate the enhancement effects by Al NPs under ultraviolet illumination, Kelvin probe force microscopy was employed and directly revealed the physical mechanism of surface plasmon oscillation, which promoted the formation of localized electric fields on α-Ga2O3. In addition, we illustrated the effects of interdigital spacing on device performances through experimental measurements and theoretical calculations. These results not only provide direct evidences for Al nanoplasmonic enhancement on the α-Ga2O3 device but also facilitate design and fabrication of solar-blind photodetectors.

Metal-Free Half-Metallicity in B-Doped gh-C3N4 Systems.

Half-metallicity rising from the s/p electrons has been one of the hot topics in spintronics. Based on the first-principles of calculation, we explore the magnetic properties of the B-doped graphitic heptazine carbon nitride (gh-C3N4) system. Ferromagnetism is observed in the B-doped gh-C3N4 system. Interestingly, its ground state phase (BC1@gh-C3N4) presents a strong half-metal property. Furthermore, the half-metallicity in BC1@gh-C3N4 can sustain up to 5% compressive strain and 1.5% tensile strain. It will lose its half-metallicity, however, when the doping concentration is below 6.25%. Our results show that such a metal-free half-metallic system has promising spintronic applications.