Precisely-controlled fabrication of single ZnO nanoemitter arrays and their possible application in low energy parallel electron beam exposure.

Precisely-controlled fabrication of single ZnO nanoemitter arrays and their possible application in low energy parallel electron beam exposure are reported. A well defined polymethyl methacrylate (PMMA) nanohole template was employed for local solution-phase growth of single ZnO nanoemitter arrays. Chlorine plasma etching for surface smoothing and pulsed-laser illumination in nitrogen for nitrogen doping were performed, which can significantly enhance the electron emission and improve the emitter-to-emitter uniformity in performance. Mechanisms responsible for the field emission enhancing effect are proposed. Low voltage (368 V) e-beam exposure was performed by using a ZnO nanoemitter array and a periodical hole pattern (0.72-1.26 µm in diameter) was produced on a thin (25 nm) PMMA. The work demonstrates the feasibility of utilizing single ZnO nano-field emitter arrays for low voltage parallel electron beam lithography.

Fabrication and field emission properties of boron nanowire bundles.

We have successfully synthesized large-scale crystalline boron nanowire bundles (BNBs) by chemical vapor deposition method. Fe(3)O(4) nanoparticles were used as catalysts spreading on ceramic substrate during the reaction process. The bundles consisted of many thin boron nanowires with a mean diameter of about 25nm and a length of several micrometers. In addition, boron nanowires are single crystals with an alpha-tetragonal structure and grow along [001] orientation. These nanowires have a surface electron affinity of 3.76eV and a work function of 4.54eV. A turn-on field of 5.1V/mum and a threshold field of 10.5V/mum were found in the nanowire bundles, and stable field emission was recorded at the same time.

Achieving uniform field emission from carbon nanotube composite cold cathode with different carbon nanotube contents: effects of conductance and plasma treatment.

A carbon nanotube (CNT) composite cold cathode was studied for field emission display application. The CNT composite cold cathode was composed of CNTs and silicon dioxide binder. Field emission from CNT composite cold cathode with different CNT contents was studied. It was found that with increase in CNT contents, the threshold field decreased. The conductance of the composite cathode was measured and with increasing CNT content, there was a critical CNT content where the conductance increased several orders of magnitude. Plasma etching using SF(6) as the etchant was adopted to treat the cathode. Improvement in emission uniformity was achieved. It was also found that after post-treatment the threshold field of the cathode decreased. The morphology of the etched cathode was analyzed and the improvement of uniformity and lowering of the threshold field was attributed to the exposure of CNTs after etching.

Damages of screen-printed carbon nanotube cold cathode during the field emission process.

The field emission properties of the screen-printed carbon nanotube (CNT) composite cathode have close relationship with its microstructure. In this study, carbon nanotube composite cold cathode with ZnO nano-particles as binding material was prepared using screen-printing method. Electric field cycles were used to post-treat the carbon nanotube composite cold cathode. During the process of electric field cycle treatment, obvious heat-induced damages were observed from the cathode. Scanning electron microscope and transmission electron microscope were employed to analyze the morphology and microstructure of the cathode. The possible mechanisms responsible for damages were discussed.

Self-assembly of Au-Ag alloy nanoparticles by thermal annealing.

Hemispherical Au-Ag alloy nanoparticles were prepared on 2-inch Si wafer by thermal annealing Au-Ag alloy thin film in protective ambient. The nanoparticles were evenly distributed on the substrate surface. The diameter of the nanoparticles is dependent of the deposition duration of the Au-Ag alloy thin film, and also the separation between the nanoparticles. The minimum and maximum diameters of the nanoparticles obtained so far are about 5 nm and 160 nm, respectively. Experimental evidences indicated that the formation of the hemispherical nanoparticles is due to the surface tensile stressing induced by the lattice expansion.

Mechanism responsible for initiating carbon nanotube vacuum breakdown.

We report a physical mechanism responsible for initiating a vacuum breakdown process of a single carbon nanotube (CNT) during field emission. A quasidynamic method has been developed to simulate the breakdown process and calculate the critical field, critical emission current density and critical temperature beyond which thermal runaway occurs before the CNT temperature reaches its melting point. This model is in good agreement with experiments carried out with a single CNT on a silicon microtip.

Microfabrication and characterization of gated amorphous diamond-based field emission electron sources.

Gated field emission electron sources of amorphous diamond (a-D) coated Si tips and a-D diodes on a rough Si substrate were studied, detailing the deposition and characterization of the thin film, the fabrication processes and the emission behavior of the electron sources. Mechanisms responsible for the emission process of the a-D coated devices are proposed. A comparison of the field emission performance of the two types of devices is presented. In addition, future improvements of the a-D diode on a rough Si cathode are discussed.