Plasma Treatment for Achieving Oxygen Substitution in Layered MoS2 and the Room-Temperature Mid-Infrared (10 µm) Photoresponse.

Highly sensitive photodetectors in the mid-infrared (MIR, 3-15 µm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS2 for room-temperature MIR (10 µm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70-130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 107 Jones are obtained under MIR light (10 µm) illumination with an average power density of 114.6 mW/cm2. The photoresponse is attributed to the introduction of electronic states in the band gap of MoS2 through oxygen substitution. A graphene/plasma-treated MoS2/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 109 Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS2/graphene device is further demonstrated in single-detector MIR (10 µm) scanning imaging. This work offers a facile approach to constructing integrated MoS2-based MIR photodetectors.

High-Performance Planar Field-Emission Photodetector of Monolayer Tungsten Disulfide with Microtips.

Monolayer tungsten disulfide (ML WS2 ) is believed as an ideal photosensitive material due to its small direct bandgap, large exciton/trion binding energy, high carrier mobility, and considerable quantum conversion efficiency. Compared with other photosensitive devices, planar field emission (FE)-type photodetectors with a full-plane structure should simultaneously have rapider switching speed and lower power consumption. In this work, ML WS2 microtips are fabricated by electron beam lithography (EBL) way and used to construct a planar FE-type photodetector. By optimization design, ML WS2 with three microtips can exhibit the maximum current density as high as  52 A cm-2 (@300 V µm-1 ), and the largest photoresponsivity is up to 6.8 × 105 A W-1 under green light irradiation, superior to that of many other ML transition metal dichalcogenide (TMDC) detectors. More interestingly, ML WS2 devices with microtips can effectively solve the contradictory problem between large photoresponsivity and rapid switching speed. The excellent photoresponse performances of ML WS2 with microtips should be attributed to their high carrier mobility, sharp emission edge, ultrahigh quantum yield, and unique planar FE device structure. Our research may shed new light on exploring the fabrication technology and photosensitive mechanism of two dimensional (2D) material-based planar FE photodetectors.

High Responsivity Vacuum Nano-Photodiode Using Single-Crystal CsPbBr3 Micro-Sheet.

Field electron emission vacuum photodiode is promising for converting free-space electromagnetic radiation into electronic signal within an ultrafast timescale due to the ballistic electron transport in its vacuum channel. However, the low photoelectric conversion efficiency still hinders the popularity of vacuum photodiode. Here, we report an on-chip integrated vacuum nano-photodiode constructed from a Si-tip anode and a single-crystal CsPbBr3 cathode with a nano-separation of ~30 nm. Benefiting from the nanoscale vacuum channel and the high surface work function of the CsPbBr3 (4.55 eV), the vacuum nano-photodiode exhibits a low driving voltage of 15 V with an ultra-low dark current (50 pA). The vacuum nano-photodiode demonstrates a high photo responsivity (1.75 AW-1@15 V) under the illumination of a 532-nm laser light. The estimated external quantum efficiency is up to 400%. The electrostatic field simulation indicates that the CsPbBr3 cathode can be totally depleted at an optimal thickness. The large built-in electric field in the depletion region facilitates the dissociation of photoexcited electron-hole pairs, leading to an enhanced photoelectric conversion efficiency. Moreover, the voltage drop in the vacuum channel increases due to the photoconductive effect, which is beneficial to the narrowing of the vacuum barrier for more efficient electron tunneling. This device shows great promise for the development of highly sensitive perovskite-based vacuum opto-electronics.

Highly efficient nonlinear optical emission from a subwavelength crystalline silicon cuboid mediated by supercavity mode.

The low quantum efficiency of silicon (Si) has been a long-standing challenge for scientists. Although improvement of quantum efficiency has been achieved in porous Si or Si quantum dots, highly efficient Si-based light sources prepared by using the current fabrication technooloy of Si chips are still being pursued. Here, we proposed a strategy, which exploits the intrinsic excitation of carriers at high temperatures, to modify the carrier dynamics in Si nanoparticles. We designed a Si/SiO2 cuboid supporting a quasi-bound state in the continuum (quasi-BIC) and demonstrated the injection of dense electron-hole plasma via two-photon-induced absorption by resonantly exciting the quasi-BIC with femtosecond laser pulses. We observed a significant improvement in quantum efficiency by six orders of magnitude to ~13%, which is manifested in the ultra-bright hot electron luminescence emitted from the Si/SiO2 cuboid. We revealed that femtosecond laser light with transverse electric polarization (i.e., the electric field perpendicular to the length of a Si/SiO2 cuboid) is more efficient for generating hot electron luminescence in Si/SiO2 cuboids as compared with that of transverse magnetic polarization (i.e., the magnetic field perpendicular to the length of a Si/SiO2 cuboid). Our findings pave the way for realizing on-chip nanoscale Si light sources for photonic integrated circuits and open a new avenue for manipulating the luminescence properties of semiconductors with indirect bandgaps.

How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor-Diode Hybrid Integration.

Advanced field-effect transistors (FETs) with nontrivial gates (e.g., offset-gates, mid-gates, split-gates, or multi-gates) or hybrid integrations (e.g., with diodes, photodetectors, or field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials and device factors. Here, it is shown that they could be understood within the same physical picture, i.e., charge transport from gated to nongated semiconductors. One proposes an indicator based on material and device factors for characterizing the transport and derives a unified and simplified solution for describing the current-voltage relations, current saturation, channel potentials, and drift field. It is verified by simulations and experiments of different types of devices with varied materials and device factors, employing organic, oxide, nanomaterial semiconductors in transistors or hybrid integrations. The concise and unified solution provides general rules for quick understanding and designing of these complex, innovative devices.

Crystalline Silicon White Light Sources Driven by Optical Resonances.

Silicon (Si) is generally considered as a poor photon emitter, and various scenarios have been proposed to improve the photon emission efficiency of Si. Here, we report the observation of a burst of the hot electron luminescence from Si nanoparticles with diameters of 150-250 nm, which is triggered by the exponential increase of the carrier density at high temperatures. We show that the stable white light emission above the threshold can be realized by resonantly exciting either the mirror-image-induced magnetic dipole resonance of a Si nanoparticle placed on a thin silver film or the surface lattice resonance of a regular array of Si nanopillars with femtosecond laser pulses of only a few picojoules, where significant enhancements in two- and three-photon-induced absorption can be achieved. Our findings indicate the possibility of realizing all-Si-based nanolasers with manipulated emission wavelength, which can be easily incorporated into future integrated optical circuits.

Magnetically Responsive Film Decorated with Microcilia for Robust and Controllable Manipulation of Droplets.

Droplet manipulations are critical for applications ranging from biochemical analysis, medical diagnosis to environmental controls. Even though magnetic actuation has exhibited great potential, the capability of high-speed, precise manipulation, and mixing improvement covering a broad droplet volume has not yet been realized. Herein, we demonstrated that the magnetic actuation could be conveniently achieved via decorating the magnetically responsive film with microcilia. Under magnetic field, the film can quickly response with localized deformation, along with the microcilia to realize the surface superhydrophobicity for droplet manipulation with velocity up to ∼173 mm/s covering a broad volume of 2-100 µL. The robust system further allows us to realize rapid and complete droplet mixing within ∼1.6 s. In addition, the microcilia decorated surface can preserve the robust superhydrophobicity after various stability tests, for example, normal pressing, chemical corrosion, and mechanical abrasion, exhibiting the possibility toward the long-term and real applications. With the multifunctional demonstrations such as obvious mixing improvement, parallel manipulation, and serial dilution, we believe that the methodology can open up a magnetic field-based avenue for future applications in digital microfluidics, and biochemical assays, etc.

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application.

Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.

Microneedles loaded with anti-PD-1-cisplatin nanoparticles for synergistic cancer immuno-chemotherapy.

Programmed cell death protein-1 (PD-1) on T-cells combined with programmed cell death ligand-1 (PD-L1) critically accounts for tumor immune evasion. Anti-PD-1 (aPD-1) blocks the binding of PD-1 to PD-L1, thus allowing T-cell activation for tumor cell eradication. Currently, the major challenges for cancer immunotherapy are how to improve the response rate and overcome drug resistance. Dermal administration turns out to be a promising route for immunotherapy since skin is a highly active immune organ containing a large population of resident antigen-presenting cells. Microneedle arrays can pierce the immune-cell-rich epidermis, leading to a robust T-cell response in the microenvironment of tumor cells. Herein, we successfully developed a microneedle patch loaded with pH-responsive tumor-targeted lipid nanoparticles (NPs), which allows local delivery of aPD-1 and cisplatin (CDDP) precisely to cancer tissues for cancer therapy. For in vivo studies, aPD-1/CDDP@NPs delivered through microneedles effectively boosted the immune response, thereby a remarkable effect on tumor regression was realized. Synergistic anticancer mechanisms were therefore activated through robust microneedle-induced T-cell response, blockage of PD-1 in T-cells by aPD-1, and an increase in direct cytotoxicity of CDDP in tumor cells. Strikingly, transdermal delivery using MNs increased the response rate in the animal model unresponsive to aPD-1 systemic therapy. This exhibited promise in the treatment of immunotherapy-unresponsive cancers. Taken together, microneedle-mediated local delivery of nano-encapsulated chemotherapeutic and immunotherapeutic agents at tumor skin sites provides a novel treatment strategy and insights into cancer therapy.

Study on Pyramidal Molybdenum Nanostructures Cold Cathode with Large-Current Properties Based on Self-Assembly Growth Method.

In order to develop a field emission cold cathode for power vacuum electronic device applications, it is important to realize the properties of large-current and high current density. This requires the design and preparation of cold cathode materials with good crystallization, suitable geometric structure, and good contact interface. In this study, we report a pyramidal molybdenum nanostructure with single crystalline nature, which was self-assembly grown by a thermal evaporation method. We also report the optimization of the nanostructure, successfully sharpening its top end and reducing the thickness of the intermediate layer between the structure and the substrate (from 31.4 to 3.1 nm). By this way, the pyramidal molybdenum nanostructure exhibits high conductivity of about 1.8 × 105 Ω-1 cm-1. The cold cathode composed by these nanostructures shows a large-current field emission performance, with the largest emission current of 47.62 mA as well as the highest current density of 2.38 A cm-2, under a pulsed electric field as high as 28 V µm-1. The proposed pyramidal molybdenum nanostructures provide a candidate for the large-current cold cathode of the power electronic devices.