RESUMO
All-inorganic CsPbI2Br inverted perovskite solar cells (PSCs) have drawn increasing attention because of their outstanding thermal stability and compatible process with tandem cells. However, relatively low open circuit voltage (Voc) has lagged their progress far behind theoretical limits. Herein, we introduce phenylmethylammonium iodide and 4-trifluoromethyl phenylmethylammonium iodide (CFPMAI) on the surface of a CsPbI2Br perovskite film and investigate their passivation effects. It is found that CFPMAI with a -CF3 substituent significantly decreases the trap density of the perovskite film by forming interactions with the under-coordinated Pb2+ ions and effectively suppresses the non-radiative recombination in the resulting PSC. In addition, CFPMAI surface passivation facilitates the optimization of energy-level alignment at the CsPbI2Br perovskite/[6,6]-phenyl C61 butyric acid methyl ester interface, resulting in improved charge extraction from the perovskite to the charge transport layer. Consequently, the optimized inverted CsPbI2Br device exhibits a markedly improved champion efficiency of 14.43% with a Voc of 1.12 V, a Jsc of 16.31 mA/cm2, and a fill factor of 79.02%, compared to the 10.92% (Voc of 0.95 V) efficiency of the control device. This study confirms the importance of substituent groups on surface passivation molecules for effective passivation of defects and optimization of energy levels, particularly for Voc improvement.
RESUMO
All-inorganic perovskite solar cells (PSCs) have recently received increasing attention due to their outstanding thermal stability. However, the performance of these devices, especially for the devices with a p-i-n structure, is still inferior to that of the typical organic-inorganic counterparts. In this study, we introduce phenylammonium iodides with different side groups on the surface of the CsPbI2Br perovskite film and investigate their passivation effects. Our studies indicate that the 4-trifluoromethyl phenylammonium iodide (CFPA) molecule with the -CF3 side group effectively decreases the trap density of the perovskite film by forming interactions with the undercoordinated Pb2+ ions and significantly inhibits the nonradiative recombination in the derived PSC, leading to an enhanced open-circuit voltage (Voc) from 0.96 to 1.10 V after passivation. Also, the CFPA post-treatment enables better energy-level alignment between the conduction band minimum of CsPbI2Br perovskite and [6,6]-phenyl C61 butyric acid methyl ester, thereby enhancing the charge extraction from the perovskite to the charge transport layer. These combined benefits result in a significant enhancement of the power conversion efficiency from 11.22 to 14.37% for inverted CsPbI2Br PSCs. The device without encapsulation exhibits a degradation of only ≈4% after 1992 h in a N2 glovebox.
