Analytical Impact-Excitation Theory of Er/O/B Codoped Si Light-Emitting Diodes.

Er doped Si light-emitting diodes may find important applications in silicon photonics and optical quantum computing. These diodes exhibit an emission efficiency 2 orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B codoped Si light-emitting diode which exhibits a strong electroluminescence by the impact excitation of electrons inelastically colliding the Er ions. An analytical impact-excitation theory was established to predict the electroluminescence intensity and internal quantum efficiency which fit well with the experimental data. From the fittings, we find that the excitable Er ions reach a record concentration of 1.8×10^{19} cm^{-3} and up to 45% of them is in an excitation state by impact excitation. This work has important implications for developing efficient classical and quantum light sources based on rare earth elements in semiconductors.

GiftBTE: an efficient deterministic solver for non-gray phonon Boltzmann transport equation.

Advances in nanotechnology have facilitated the exploration of submicron thermal transport. At this scale, Fourier's law is no longer applicable, and the governing equation for thermal transport is the phonon Boltzmann transport equation (BTE). However, the availability of open-source solvers for the phonon BTE is limited, impeding progress in this field. This study introduces an open-source package, GiftBTE, for numerically solving the non-gray phonon BTE. GiftBTE employs deterministic solutions and provides both steady-state and transient solvers. For the steady-state solver, GiftBTE employs the implicit discrete ordinates method (DOM) with second-order spatial accuracy and the synthetic iterative scheme. For the transient solver, GiftBTE employs the explicit DOM with second-order spatial accuracy. This package demonstrates excellent computational efficiency, enabling realistic three-dimensional simulations of devices and materials. By interfacing with first-principles calculations, this solver enables parameter-free computation of submicron thermal transport. The application of GiftBTE includes, but is not limited to, computing the thermal conductivity of nanostructures, predicting temperature rises in transistors, and simulating laser heating processes.