Photoelectric Properties of GaS1-xSex (0 ≤ x ≤ 1) Layered Crystals.

In this study, the photoelectric properties of a complete series of GaS1-xSex (0 ≤ x ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaS1-xSex as the Se composition x increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaS1-xSex to light with increasing x. Frequency-dependent photocurrent measurements demonstrate that both pure GaS crystals and GaS1-xSex ternary alloy crystals exhibit a rapid decrease in photocurrents with increasing illumination frequency. Crystals with lower x exhibit a faster decrease in photocurrent. However, pure GaSe crystal maintains its photocurrent significantly even at high frequencies. Measurements for laser-power-dependent photoresponsivity and bias-voltage-dependent photoresponsivity also indicate an increase in the photoresponsivity of GaS1-xSex as x increases. Overall, the photoresponsive performance of GaS1-xSex is enhanced with increasing x, and pure GaSe exhibits the best performance. This result contradicts the findings of previous reports. Additionally, the inverse trends between bandgap and photoresponsivity with increasing x suggest that GaS1-xSex-based photodetectors could potentially offer a high response and wavelength-selectivity for UV and visible light detection. Thus, this work provides novel insights into the photoelectric characteristics of GaS1-xSex layered crystals and highlights their potential for optoelectronic applications.

Enhanced Optical Response of SnS/SnS2 Layered Heterostructure.

The SnS/SnS2 heterostructure was fabricated by the chemical vapor deposition method. The crystal structure properties of SnS2 and SnS were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and field emission scanning electron microscopy (FESEM). The frequency dependence photoconductivity explores its carrier kinetic decay process. The SnS/SnS2 heterostructure shows that the ratio of short time constant decay process reaches 0.729 with a time constant of 4.3 × 10-4 s. The power-dependent photoresponsivity investigates the mechanism of electron-hole pair recombination. The results indicate that the photoresponsivity of the SnS/SnS2 heterostructure has been increased to 7.31 × 10-3 A/W, representing a significant enhancement of approximately 7 times that of the individual films. The results show the optical response speed has been improved by using the SnS/SnS2 heterostructure. These results indicate an application potential of the layered SnS/SnS2 heterostructure for photodetection. This research provides valuable insights into the preparation of the heterostructure composed of SnS and SnS2, and presents an approach for designing high-performance photodetection devices.

Temperature-Dependent Absorption of Ternary HfS2-xSex 2D Layered Semiconductors.

In this study, we present the investigation of optical properties on a series of HfS2-xSex crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20-300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS2-xSex were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.

Enhanced Optical Response of Zinc-Doped Tin Disulfide Layered Crystals Grown with the Chemical Vapor Transport Method.

Tin disulfide (SnS2) is a promising semiconductor for use in nanoelectronics and optoelectronics. Doping plays an essential role in SnS2 applications, because it can increase the functionality of SnS2 by tuning its original properties. In this study, the effect of zinc (Zn) doping on the photoelectric characteristics of SnS2 crystals was explored. The chemical vapor transport method was adopted to grow pristine and Zn-doped SnS2 crystals. Scanning electron microscopy images indicated that the grown SnS2 crystals were layered materials. The ratio of the normalized photocurrent of the Zn-doped specimen to that of the pristine specimen increased with an increasing illumination frequency, reaching approximately five at 104 Hz. Time-resolved photocurrent measurements revealed that the Zn-doped specimen had shorter rise and fall times and a higher current amplitude than the pristine specimen. The photoresponsivity of the specimens increased with an increasing bias voltage or decreasing laser power. The Zn-doped SnS2 crystals had 7.18 and 3.44 times higher photoresponsivity, respectively, than the pristine crystals at a bias voltage of 20 V and a laser power of 4 × 10-8 W. The experimental results of this study indicate that Zn doping markedly enhances the optical response of SnS2 layered crystals.

The Impact of the "Osteo" Component of Osteosarcopenia on Fragility Fractures in Post-Menopausal Women.

Osteosarcopenia, the coexistence of bone and muscle loss, is common in older adults, but its definition lacks international consensus. This cross-sectional study (n = 1199 post-menopausal women) aimed to determine the association between osteosarcopenia and fragility fractures and to investigate the impact of the definition of the "osteo" component. Bone mineral density and bone microarchitecture were measured by dual-energy X-ray absorptiometry and the trabecular bone score (TBS), respectively. The "osteo" component of osteosarcopenia was classified as osteoporosis (T-score ≤ -2.5 SD), osteopenia/osteoporosis (T-score < -1 SD), and high-fracture-risk osteopenia (-2.5 SD < T-score < -1 SD)/osteoporosis (T-score ≤ -2.5 SD). The Fracture Risk Assessment Tool was used to identify high-fracture-risk osteopenia. Altogether, 30.3%, 32.2%, 14.4%, and 23.1% of participants had osteosarcopenia, osteoporosis alone, sarcopenia alone, and neither condition, respectively. The odds ratios between osteosarcopenia and fragility fractures were 3.70 (95% CI: 1.94-7.04) for osteosarcopenia, 2.48 (95% CI: 1.30-4.71) for osteoporosis alone, and 1.87 (95% CI: 0.84-4.14) for sarcopenia alone. Women with osteosarcopenia also had lower TBS, indicating worse bone microarchitecture. In conclusion, women with osteosarcopenia were more likely to have previously sustained a fracture compared to those without osteosarcopenia, with sarcopenia alone, and with osteoporosis alone. The relationship between osteosarcopenia and fracture risk may be best identified when considering high-fracture-risk osteopenia and osteoporosis.

Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS2-xSex Semiconductors with Fully Tunable Stoichiometry.

In this study, a series of SnS2-xSex (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical-vapor transport method. The crystal structural and material phase of SnS2-xSex layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnS2-xSex compounds was measured in the temperature range of 20-300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnS2-xSex were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.

Influence of Mn, Fe, Co, and Cu Doping on the Photoelectric Properties of 1T HfS2 Crystals.

Doping plays a vital role in the application of transition-metal dichalcogenides (TMDCs) because it can increase the functionality of TMDCs by tuning their native characteristics. In this study, the influence of Mn, Fe, Co, and Cu doping on the photoelectric properties of HfS2 was investigated. Pristine, Mn-, Fe-, Co-, and Cu-doped HfS2 crystals were grown using the chemical vapor transport method. Scanning electron microscopy images showed that the crystals were layered and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy measurements confirmed that the crystals were in the 1T-phase with a CdI2-like structure. The bandgap of pristine HfS2 obtained from the absorption and photoconductivity spectra was approximately 1.99 eV. As the dopant changed from Mn, Fe, and Co, to Cu, the bandgap gradually increased. The activation energies of the samples were determined using temperature-dependent current-voltage curves. After doping, the activation energy decreased, and the Co-doped HfS2 exhibited the smallest activation energy. Time-resolved photoresponse measurements showed that doping improved the response of HfS2 to light; the Co-doped HfS2 exhibited the best response. The photoresponsivity of HfS2 as a function of the laser power and bias voltage was measured. After doping, the photoresponsivity increased markedly; the Co-doped HfS2 exhibited the highest photoresponsivity. All the experimental results indicated that doping with Mn, Fe, Co, and Cu significantly improved the photoresponsive performance of HfS2, of which Co-doped HfS2 had the best performance.

Synthesis and Characterization of CuIn1-xGaxSe2 Semiconductor Nanocrystals.

In this paper, the synthesis and characterization of CuIn1-xGaxSe2 (0 £ x £ 1) nanocrystals are reported with the influences of x value on the structural, morphological, and optical properties of the nanocrystals. The X-ray diffraction (XRD) results showed that the nanocrystals were of chalcopyrite structure with particle size in the range of 11.5-17.4 nm. Their lattice constants decreased with increasing Ga content. Thus, the x value of the CuIn1-xGaxSe2 nanocrystals was estimated by Vegard's law. Transmission electron microscopy (TEM) analysis revealed that the average particle size of the nanocrystals agreed with the results of XRD. Well-defined lattice fringes were shown in the TEM images. An analysis of the absorption spectra indicated that the band gap energy of these CuIn1-xGaxSe2 nanocrystals was tuned from 1.11 to 1.72 eV by varying the x value from 0 to 1. The Raman spectra indicated that the A1 optical vibrational mode of the nanocrystals gradually shifted to higher wavenumber with increasing x value. A simple theoretical equation for the A1 mode frequency was proposed. The plot of this equation showed the same trend as the experimental data.

Influence of Y-doped induced defects on the optical and magnetic properties of ZnO nanorod arrays prepared by low-temperature hydrothermal process.

One-dimensional pure zinc oxide (ZnO) and Y-doped ZnO nanorod arrays have been successfully fabricated on the silicon substrate for comparison by a simple hydrothermal process at the low temperature of 90°C. The Y-doped nanorods exhibit the same c-axis-oriented wurtzite hexagonal structure as pure ZnO nanorods. Based on the results of photoluminescence, an enhancement of defect-induced green-yellow visible emission is observed for the Y-doped ZnO nanorods. The decrease of E2(H) mode intensity and increase of E1(LO) mode intensity examined by the Raman spectrum also indicate the increase of defects for the Y-doped ZnO nanorods. As compared to pure ZnO nanorods, Y-doped ZnO nanorods show a remarked increase of saturation magnetization. The combination of visible photoluminescence and ferromagnetism measurement results indicates the increase of oxygen defects due to the Y doping which plays a crucial role in the optical and magnetic performances of the ZnO nanorods.