High-Performance TiO2/ZrO2/TiO2 Thin Film Capacitor by Plasma-Assisted Atomic Layer Annealing.

Although laminate structures are widely used in electrostatic capacitors, unavoidable heterogeneous interfaces often deteriorate the dielectric properties by impeding film crystallization. In this study, a TiO2/ZrO2/TiO2 (TZT) laminate structure, where upper-TiO2 deposited on the heterogeneous interface was crystallized by plasma-assisted atomic layer annealing (ALA), was investigated. ALA effectively induced the phase transition of the upper-TiO2 from the amorphous or anatase phase to the rutile phase, leading to an increase in the dielectric constant, whereas the ZrO2 blocking interlayer maintained the amorphous phase owing to the extremely localized effect of ALA. Consequently, through the layer-by-layer phase control of ALA, the dielectric constant of the upper-TiO2 was enhanced by 25% by applying ALA, leading to an increase in a capacitance density of 27% of the TZT capacitor, whereas a low leakage current density of ∼10-8 A/cm2 was maintained (at 1 V). In addition, the TZT capacitor on three-dimensional structures (aspect ratio of 5:1) shows a high capacitance density of up to 461 nF/mm2 owing to ALA.

Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer.

Optical methods for measuring of the emission spectra of oscillator circuits operating in the 400-600 GHz range are described. The emitted power from patch antennas included in the circuits is measured by placing the circuit in the source chamber of a Fourier-transform interferometric spectrometer. The results show that this optical technique is useful for measuring circuits pushing the frontier in operating frequency. The technique also allows the characterization of the circuit by measuring the power radiated in the fundamental and in the harmonics. This capability is useful for oscillator architectures designed to cancel the fundamental and use higher harmonics. The radiated power was measured using two techniques: direct measurement of the power by placing the device in front of a bolometer of known responsivity, and by comparison to the estimated power from blackbody sources. The latter technique showed that these circuits have higher emission than blackbody sources at the operating frequencies, and, therefore, offer potential spectroscopy applications.