A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique.

A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 µm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems.

A 24 GHz CMOS Direct-Conversion RF Receiver with I/Q Mismatch Calibration for Radar Sensor Applications.

A 24 GHz millimeter-wave direct-conversion radio-frequency (RF) receiver with wide-range and precise I/Q mismatch calibration is designed in 65 nm CMOS technology for radar sensor applications. The CMOS RF receiver is based on a quadrature direct-conversion architecture. Analytic relations are derived to clearly exhibit the individual contributions of the I/Q amplitude and phase mismatches to the image-rejection ratio (IRR) degradation, which provides a useful design guide for determining the range and resolution of the I/Q mismatch calibration circuit. The designed CMOS RF receiver comprises a low-noise amplifier, quadrature down-conversion mixer, baseband amplifier, and quadrature LO generator. Controlling the individual gate bias voltages of the switching FETs in the down-conversion mixer having a resistive load is found to induce significant changes at the amplitude and phase of the output signal. In the calibration process, the mixer gate bias tuning is first performed for the amplitude mismatch calibration, and the remaining phase mismatch is then calibrated out by the varactor capacitance tuning at the LO buffer's LC load. Implemented in 65 nm CMOS process, the RF receiver achieves 31.5 dB power gain, -35.2 dBm input-referred 1 dB compression power, and 4.8-7.1 dB noise figure across 22.5-26.1 GHz band, while dissipating 106.2 mA from a 1.2 V supply. The effectiveness of the proposed I/Q mismatch calibration is successfully verified by observing that the amplitude and phase mismatches are improved from 1.0-1.5 dB to 0.02-0.19 dB, and from 10.8-23.8 to 1.1-3.2 degrees, respectively.

A CMOS RF Receiver with Improved Resilience to OFDM-Induced Second-Order Intermodulation Distortion for MedRadio Biomedical Devices and Sensors.

A MedRadio RF receiver integrated circuit for implanted and wearable biomedical devices must be resilient to the out-of-band (OOB) orthogonal frequency division modulation (OFDM) blocker. As the OFDM is widely adopted for various broadcasting and communication systems in the ultra-high frequency (UHF) band, the selectivity performance of the MedRadio RF receiver can severely deteriorate by the second-order intermodulation (IM2) distortion induced by the OOB OFDM blocker. An analytical investigation shows how the OFDM-induced IM2 distortion power can be translated to an equivalent two-tone-induced IM2 distortion power. It makes the OFDM-induced IM2 analysis and characterization process for a MedRadio RF receiver much simpler and more straightforward. A MedRadio RF receiver integrated circuit with a significantly improved resilience to the OOB IM2 distortion is designed in 65 nm complementary metal-oxide-semiconductor (CMOS). The designed RF receiver is based on low-IF architecture, comprising a low-noise amplifier, single-to-differential transconductance stage, quadrature passive mixer, trans-impedance amplifier (TIA), image-rejecting complex bandpass filter, and fractional phase-locked loop synthesizer. We describe design techniques for the IM2 calibration through the gate bias tuning at the mixer, and the dc offset calibration that overcomes the conflict with the preceding IM2 calibration through the body bias tuning at the TIA. Measured results show that the OOB carrier-to-interference ratio (CIR) performance is significantly improved by 4-11 dB through the proposed IM2 calibration. The measured maximum tolerable CIR is found to be between -40.2 and -71.2 dBc for the two-tone blocker condition and between -70 and -77 dBc for the single-tone blocker condition. The analytical and experimental results of this work will be essential to improve the selectivity performance of a MedRadio RF receiver against the OOB OFDM-blocker-induced IM2 distortion and, thus, improve the robustness of the biomedical devices in harsh wireless environments in the MedRadio and UHF bands.

A 28-GHz Switched-Beam Antenna with Integrated Butler Matrix and Switch for 5G Applications.

This work presents a 28-GHz Butler matrix based switched-beam antenna for fifth-generation (5G) wireless applications. It integrates a 1 × 4 microstrip antenna, a 4 × 4 Butler matrix, and a single-pole four-throw (SP4T) absorptive switch in a single planar printed circuit board and is housed in a metal enclosure. Co-integration of a packaged switch chip with the Butler matrix based switched-beam antenna greatly enhances the form factor and integration level of the entire system. A wideband two-section branch line coupler is employed to minimize the phase and magnitude errors and variations of the Butler matrix. The aluminum metal enclosure stabilizes the electrical performances, reduces the sidelobes, and improves the structural stability. The fabricated antenna with the metal enclosure assembled has a dimension of 37 × 50 × 6.2 mm3. With an RF input signal fed to the antenna's input port through a single Ka-band connector, and the switching states chosen by 2-bit dc control voltages, the antenna successfully demonstrates four directional switched beams. The beam switching operations are verified through the over-the-air far-field measurements. The measured results show that the four beam steering directions are -43°, -17°, +10°, +34° with side lobe levels < -5.3 dB at 28 GHz. The antenna also shows reasonably wideband radiation patterns over 27-29 GHz band. The 10-dB impedance bandwidth is 25.4-27.6 GHz, while a slightly relaxed 8-dB bandwidth is 25.2-29.6 GHz. Compared to previous works, this four-directional switched-beam antenna successfully exhibits the advantages of high integration level and satisfactory performances for the 28-GHz 5G wireless applications.