Cable-Driven Haptic Interface With Movable Bases Achieving Maximum Workspace and Isotropic Force Exertion.

Haptic interactions play an essential role in education to enhance learning efficiency; however, haptic information for virtual educational content remains lacking. This article proposes a planar cable-driven haptic interface with movable bases that can display isotropic force feedback with maximum workspace extension on a commercial screen display. A generalized kinematic and static analysis of the cable-driven mechanism is derived by considering movable pulleys. Based on the analyses, a system including movable bases is designed and controlled to maximize the workspace subject to isotropic force exertion for the target screen area. The proposed system is evaluated experimentally as a haptic interface represented by the workspace, isotropic force-feedback range, bandwidth, Z-width, and user experiment. The results indicate that the proposed system can maximize workspace to the target rectangular area and exert isotropic force up to 94.0% of the theoretical computed one within the workspace.

Sensor-Embedded Automatic Grasping Forceps for Precise Corneal Suture in Penetrating Keratoplasty.

In penetrating keratoplasty (PKP), the proper corneal suture placement is very important for successful transplantation and restoring functional vision. Generating sutures with accurate depth is difficult for the surgeon because of the tissue's softness, lack of depth information, and hand tremors. In this paper, an automatic cornea grasping device is proposed, which detects when the device reaches the target suture depth. When the device reaches the target depth, the device rapidly grasps the cornea to prevent error induced by human hand tremors. In the paper, the performance of the proposed sensor, the actuator, and the device are experimentally verified with ex vivo experiment. The result showed that the proposed device could enhance the accuracy and precision of the corneal suture depth.

High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface.

Two-dimensional (2D) transition metal dichalcogenide (TMD) hetero PN junctions with a van der Waals (vdW) interface have received much attention, because PN diodes are basically important to control the vertical current across the junction. Interestingly, the same vdW PN junction structure can be utilized for junction field-effect transistors (JFETs) where in-plane current is controlled along the junction. However, 2D vdW JFETs seem rarely reported, despite their own advantages to achieve when good vdW junction is secured. Here, we present high-performance p-MoTe2 JFETs using almost perfect vdW organic Alq3/p-MoTe2 junctions and demonstrate organic NPB/n-MoS2 JFETs. The p- and n-channel JFETs stably show high mobilities of 60-80 and ∼800 cm2/V s, respectively, along with a high ON/OFF current ratio (>1 × 105) and minimal gate leakage at 5 V even after a few months. Such performances are attributed to a quality vdW junction at organic layer/TMD interfaces.

Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two-Dimensional WSe2/MoTe2 Stack Channel.

Very recently, stacked two-dimensional materials have been studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stacked transition metal dichalcogenide (TMD) channels, where the heterojunction interface between two TMDs appears useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe2 and MoTe2 flakes are vertically stacked on the gate dielectric, and bottom p-MoTe2 performs as a channel for hole transport. Interestingly, the WSe2/MoTe2 stack interface functions as a hole trapping site where traps behave in a nonvolatile manner, although trapping/detrapping can be controlled by gate voltage (VGS). Memory retention after high VGS pulse appears longer than 10000 s, and the Program/Erase ratio in a drain current is higher than 200. Moreover, the traps are delicately controllable even with small VGS, which indicates that a neuromorphic memory is also possible with our heterojunction stack FETs. Our stack channel FET demonstrates neuromorphic memory behavior of ∼94% recognition accuracy.

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact.

A van der Waals (vdW) Schottky junction between two-dimensional (2D) transition metal dichalcogenides (TMDs) is introduced here for both vertical and in-plane current devices: Schottky diodes and metal semiconductor field-effect transistors (MESFETs). The Schottky barrier between conducting NbS2 and semiconducting n-MoS2 appeared to be as large as ∼0.5 eV due to their work-function difference. While the Schottky diode shows an ideality factor of 1.8-4.0 with an on-to-off current ratio of 103-105, Schottky-effect MESFET displays little gate hysteresis and an ideal subthreshold swing of 60-80 mV/dec due to low-density traps at the vdW interface. All MESFETs operate with a low threshold gate voltage of -0.5 ∼ -1 V, exhibiting easy saturation. It was also found that the device mobility is significantly dependent on the condition of source/drain (S/D) contact for n-channel MoS2. The highest room temperature mobility in MESFET reaches to approximately more than 800 cm2/V s with graphene S/D contact. The NbS2/n-MoS2 MESFET with graphene was successfully integrated into an organic piezoelectric touch sensor circuit with green OLED indicator, exploiting its predictable small threshold voltage, while NbS2/n-MoS2 Schottky diodes with graphene were applied to extract doping concentrations in MoS2 channel.