RESUMO
We have studied current induced magnetization switching in W/CoFeB/MgO based three terminal magnetic tunnel junctions. The switching driven by spin-orbit torque (SOT) is evaluated in the so-called type-Y structure, in which the magnetic easy-axis of the CoFeB layer lies in the film plane and is orthogonal to the current flow. The effective spin Hall angle estimated from the bias field dependence of critical current (Ic) is ~ 0.07. The field and current dependence of the switching probability are studied. The field and DC current induced switching can be described using a model based on thermally assisted magnetization switching. In contrast, the 50 ns long pulse current dependence of the switching probability shows significant deviation from the model, even if contribution from the field-like torque is included. The deviation is particularly evident when the threshold switching current is larger. These results show that conventional thermally assisted magnetization switching model cannot be used to describe SOT induced switching using short current pulses.
RESUMO
Parasitic magnetism plays an important role in magnetoelectric spin switching of antiferromagnetic oxides, but its mechanism has not been clearly investigated. Unlike the widely obtained surface boundary magnetization in magnetoelectric Cr2O3 antiferromagnet, we previously reported that Al doping could produce volume-dependent parasitic magnetism (Mpara) in Cr2O3 with the remaining magnetoelectric effect and antiferromagnetic properties. In this work, we systematically investigated the magnetic properties of Mpara in Cr2O3 through its different exchange coupling characteristics with the ferromagnet at various conditions. The columnar grain boundaries cause an antiferromagnetic sublattice breaking to produce uncompensated spins and thus are considered to be responsible for Mpara in both undoped and Al-doped Cr2O3. Finally, a model was proposed for the formation mechanism of the parasitic magnetism in Cr2O3, which explains the reported magnetic characteristics of Cr2O3, and some current topics such as the domain formation and motion in Cr2O3 during magnetoelectric spin switching. This work contributes to a deep understanding of antiferromagnetic spintronics and provides a method to realize the low-energy operation of antiferromagnetic-based magnetic random access memory.
RESUMO
Nano-contact magnetoresistance (NCMR) spin-valves (SVs) using an AlO x nano-oxide-layer (NOL) have numerous nanocontacts in the thin AlOx oxide layer. The NCMR theoretically depends on the bulk scattering spin asymmetry ([Formula: see text]) of the ferromagnetic material in the nanocontacts. To determine the relationship between NCMR and [Formula: see text], we investigated the dependence of NCMR on the composition of the ferromagnetic material Co1-xFex. The samples were annealed at 270 °C and 380 °C to enhance the MR ratio. For both annealing temperatures, the magnetorsistance ratio in the low-resistance area product region at less than 1 Ω µm2 was maximized for Co0.5Fe0.5. To evaluate [Formula: see text] exactly, we fabricated current-perpendicular-to-plane giant magnetoresistance SVs with Co1-xFex/Cu/Co1-xFex layers and used Valet and Fert's theory to solve the diffusion equation of the spin accumulation for a ferromagnetic layer/non-ferromagnetic layer of five layers with a finite diffusion length. The evaluated [Formula: see text] for Co1-xFex was also maximized for Co0.5Fe0.5. Additionally, to determine the difference between the experimental MR ratio of NCMR SVs and the theoretical MR ratio, we fabricated Co0.5Fe0.5 with oxygen impurities and estimated the decrease in [Formula: see text] with increasing oxygen impurity concentration. Our Co0.5Fe0.5 nano-contacts fabricated using ion-assisted oxidation may contain oxygen impurities, and the oxygen impurities might cause a decrease in [Formula: see text] and the MR ratio.
