The 2024 magnonics roadmap.

Magnonicsis a research field that has gained an increasing interest in both the fundamental and applied sciences in recent years. This field aims to explore and functionalize collective spin excitations in magnetically ordered materials for modern information technologies, sensing applications and advanced computational schemes. Spin waves, also known as magnons, carry spin angular momenta that allow for the transmission, storage and processing of information without moving charges. In integrated circuits, magnons enable on-chip data processing at ultrahigh frequencies without the Joule heating, which currently limits clock frequencies in conventional data processors to a few GHz. Recent developments in the field indicate that functional magnonic building blocks for in-memory computation, neural networks and Ising machines are within reach. At the same time, the miniaturization of magnonic circuits advances continuously as the synergy of materials science, electrical engineering and nanotechnology allows for novel on-chip excitation and detection schemes. Such circuits can already enable magnon wavelengths of 50 nm at microwave frequencies in a 5G frequency band. Research into non-charge-based technologies is urgently needed in view of the rapid growth of machine learning and artificial intelligence applications, which consume substantial energy when implemented on conventional data processing units. In its first part, the 2024 Magnonics Roadmap provides an update on the recent developments and achievements in the field of nano-magnonics while defining its future avenues and challenges. In its second part, the Roadmap addresses the rapidly growing research endeavors on hybrid structures and magnonics-enabled quantum engineering. We anticipate that these directions will continue to attract researchers to the field and, in addition to showcasing intriguing science, will enable unprecedented functionalities that enhance the efficiency of alternative information technologies and computational schemes.

Nonuniform Current-Driven Formation and Displacement of the Magnetic Compensation Point in Variable-Width Nanoscale Ferrimagnets.

Nano- and microstructures based on ferrimagnets can demonstrate high efficiency and dynamics of current-induced magnetization switching combined with high stability of spin textures such as bubble domains and skyrmions, which are of practical importance for the development of spintronics and spin-orbitronics. This set of features is usually associated with magnetic momentum or angular momentum compensation states. Here, we experimentally show that the compensation state can be realized locally using nonuniform Joule heating. This effect is observed in the variable-width current guide made of the ferrimagnetic W/Co76Tb24/Ru thin films, where the position of a region heated to the compensation temperature depends linearly on the current pulse amplitude. This approach makes it possible to observe the simultaneous coexistence of Co-dominant and Tb-dominant regions, where current pulses induce spin-orbit torques in opposite directions, leading to local magnetization switching. It is found that the position of a Néel domain wall constraining the switched region lies in the vicinity of the coordinate corresponding to the compensation point but does not coincide with it due to high mobility under the action of spin current. Our findings open an alternative approach for engineering of ferrimagnetic nanodevices with advanced properties for future applications in spintronics, spin-orbitronics, and nanoelectronics.

Bulk Rashba-Type Spin Splitting in Non-Centrosymmetric Artificial Superlattices.

Spin current, converted from charge current via spin Hall or Rashba effects, can transfer its angular momentum to local moments in a ferromagnetic layer. In this regard, the high charge-to-spin conversion efficiency is required for magnetization manipulation for developing future memory or logic devices including magnetic random-access memory. Here, the bulk Rashba-type charge-to-spin conversion is demonstrated in an artificial superlattice without centrosymmetry. The charge-to-spin conversion in [Pt/Co/W] superlattice with sub-nm scale thickness shows strong W thickness dependence. When the W thickness becomes 0.6 nm, the observed field-like torque efficiency is about 0.6, which is an order larger than other metallic heterostructures. First-principles calculation suggests that such large field-like torque arises from bulk-type Rashba effect due to the vertically broken inversion symmetry inherent from W layers. The result implies that the spin splitting in a band of such an ABC-type artificial SL can be an additional degree of freedom for the large charge-to-spin conversion.

Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers.

The diode effect is fundamental to electronic devices and is widely used in rectifiers and a.c.-d.c. converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE)1-8, which relies on broken inversion symmetry in a superconductor, may mitigate this obstacle: in one direction, a zero-resistance supercurrent can flow through the diode, but for the opposite direction of current flow, the device enters the normal state with ohmic resistance. The application of a magnetic field can induce SDE in Nb/V/Ta superlattices with a polar structure1,2, in superconducting devices with asymmetric patterning of pinning centres9 or in superconductor/ferromagnet hybrid devices with induced vortices10,11. The need for an external magnetic field limits their practical application. Recently, a field-free SDE was observed in a NbSe2/Nb3Br8/NbSe2 junction; it originates from asymmetric Josephson tunnelling that is induced by the Nb3Br8 barrier and the associated NbSe2/Nb3Br8 interfaces12. Here, we present another implementation of zero-field SDE using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The magnetic layers provide the necessary symmetry breaking, and we can tune the SDE by adjusting the structural parameters, such as the constituent elements, film thickness, stacking order and number of repetitions. We control the polarity of the SDE through the magnetization direction of the ferromagnetic layers. Artificially stacked structures13-18, such as the one used in this work, are of particular interest as they are compatible with microfabrication techniques and can be integrated with devices such as Josephson junctions19-22. Energy-loss-free SDEs as presented in this work may therefore enable novel non-volatile memories and logic circuits with ultralow power consumption.

Magnetic polarization selective spectroscopy of magnetic thin films probed by wideband crossed microstrip circuit in GHz regime.

We have developed a method to obtain wideband magnetic polarization selective spectra of magnetic thin films by using circularly polarized microwaves. The combination of an over-coupled crossed microstrip resonator and a hybrid coupler enables broadband and accurate control of circularly polarized microwaves. The performance of the present method was demonstrated with an yttrium iron garnet thin film, and we detected the magnetic polarization dependence of a Kittel mode and a perpendicular standing spin wave mode in the range of 3-20 GHz. In addition, three types of crossed microstrip resonators were systematically studied with experiments and simulations. As a result, we achieved the polarization efficiency of 80% and found how to optimize the crossed microstrip resonator depending on the desired sensitivity, bandwidth, or sample size.

Observation of superconducting diode effect.

Nonlinear optical and electrical effects associated with a lack of spatial inversion symmetry allow direction-selective propagation and transport of quantum particles, such as photons1 and electrons2-9. The most common example of such nonreciprocal phenomena is a semiconductor diode with a p-n junction, with a low resistance in one direction and a high resistance in the other. Although the diode effect forms the basis of numerous electronic components, such as rectifiers, alternating-direct-current converters and photodetectors, it introduces an inevitable energy loss due to the finite resistance. Therefore, a worthwhile goal is to realize a superconducting diode that has zero resistance in only one direction. Here we demonstrate a magnetically controllable superconducting diode in an artificial superlattice [Nb/V/Ta]n without a centre of inversion. The nonreciprocal resistance versus current curve at the superconducting-to-normal transition was clearly observed by a direct-current measurement, and the difference of the critical current is considered to be related to the magnetochiral anisotropy caused by breaking of the spatial-inversion and time-reversal symmetries10-13. Owing to the nonreciprocal critical current, the [Nb/V/Ta]n superlattice exhibits zero resistance in only one direction. This superconducting diode effect enables phase-coherent and direction-selective charge transport, paving the way for the construction of non-dissipative electronic circuits.

Tunable Magnon-Magnon Coupling Mediated by Dynamic Dipolar Interaction in Synthetic Antiferromagnets.

We report an experimental observation of magnon-magnon coupling in interlayer exchange coupled synthetic antiferromagnets of FeCoB/Ru/FeCoB layers. An anticrossing gap of spin-wave resonance between acoustic and optic modes appears when the external magnetic field points to the direction tilted from the spin-wave propagation. The magnitude of the gap (i.e., coupling strength) can be controlled by changing the direction of the in-plane magnetic field and also enhanced by increasing the wave number of excited spin waves. We find that the coupling strength under the specified conditions is larger than the dissipation rates of both the resonance modes, indicating that a strong coupling regime is satisfied. A theoretical analysis based on the Landau-Lifshitz equation shows quantitative agreement with the experiments and indicates that the anticrossing gap appears when the exchange symmetry of two magnetizations is broken by the spin-wave excitation.

Switchable giant nonreciprocal frequency shift of propagating spin waves in synthetic antiferromagnets.

The nonreciprocity of propagating spin waves, i.e., the difference in amplitude and/or frequency depending on the propagation direction, is essential for the realization of spin wave-based logic circuits. However, the nonreciprocal frequency shifts demonstrated so far are not large enough for applications because they originate from interfacial effects. In addition, switching of the spin wave nonreciprocity in the electrical way remains a challenging issue. Here, we show a switchable giant nonreciprocal frequency shift of propagating spin waves in interlayer exchange-coupled synthetic antiferromagnets. The observed frequency shift is attributed to large asymmetric spin wave dispersion caused by a mutual dipolar interaction between two magnetic layers. Furthermore, we find that the sign of the frequency shift depends on relative configuration of two magnetizations, based on which we demonstrate an electrical switching of the nonreciprocity. Our findings provide a route for switchable and highly nonreciprocal spin wave-based applications.

Bulk Dzyaloshinskii-Moriya interaction in amorphous ferrimagnetic alloys.

Symmetry breaking is a fundamental concept that prevails in many branches of physics1-5. In magnetic materials, broken inversion symmetry induces the Dzyaloshinskii-Moriya interaction (DMI), which results in fascinating physical behaviours6-14 with the potential for application in future spintronic devices15-17. Here, we report the observation of a bulk DMI in GdFeCo amorphous ferrimagnets. The DMI is found to increase linearly with an increasing thickness of the ferrimagnetic layer, which is a clear signature of the bulk nature of DMI. We also found that the DMI is independent of the interface between the heavy metal and ferrimagnetic layer. This bulk DMI is attributed to an asymmetric distribution of the elemental content in the GdFeCo layer, with spatial inversion symmetry broken throughout the layer. We expect that our experimental identification of a bulk DMI will open up additional possibilities to exploit this interaction in a wide range of materials.

Low Magnetic Damping of Ferrimagnetic GdFeCo Alloys.

We investigate the Gilbert damping parameter α for rare earth (RE)-transition metal (TM) ferrimagnets over a wide temperature range. Extracted from the field-driven magnetic domain-wall mobility, α was as low as the order of 10^{-3} and was almost constant across the angular momentum compensation temperature T_{A}, starkly contrasting previous predictions that α should diverge at T_{A} due to a vanishing total angular momentum. Thus, magnetic damping of RE-TM ferrimagnets is not related to the total angular momentum but is dominated by electron scattering at the Fermi level where the TM has a dominant damping role. This low value of the Gilbert damping parameter suggests that ferrimagnets can serve as versatile platforms for low-dissipation high-speed magnetic devices.

Vanishing skyrmion Hall effect at the angular momentum compensation temperature of a ferrimagnet.

In the presence of a magnetic field, the flow of charged particles in a conductor is deflected from the direction of the applied force, which gives rise to the ordinary Hall effect. Analogously, moving skyrmions with non-zero topological charges and finite fictitious magnetic fields exhibit the skyrmion Hall effect, which is detrimental for applications such as skyrmion racetrack memory. It was predicted that the skyrmion Hall effect vanishes for antiferromagnetic skyrmions because their fictitious magnetic field, proportional to net spin density, is zero. Here we investigate the current-driven transverse elongation of pinned ferrimagnetic bubbles. We estimate the skyrmion Hall effect from the angle between the current and the bubble elongation directions. The angle and, hence, the skyrmion Hall effect vanishes at the angular momentum compensation temperature where the net spin density vanishes. Furthermore, our study establishes a direct connection between the fictitious magnetic field and the spin density.

Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system.

Spin-orbit torques, including the Rashba and spin Hall effects, have been widely observed and investigated in various systems. Since interesting spin-orbit torque (SOT) arises at the interface between heavy nonmagnetic metals and ferromagnetic metals, most studies have focused on the ultra-thin ferromagnetic layer with interface perpendicular magnetic anisotropy. Here, we measured the effective longitudinal and transverse fields of bulk perpendicular magnetic anisotropy Pd/FePd (1.54 to 2.43 nm)/MgO systems using harmonic methods with careful correction procedures. We found that in our range of thicknesses, the effective longitudinal and transverse fields are five to ten times larger than those reported in interface perpendicular magnetic anisotropy systems. The observed magnitude and thickness dependence of the effective fields suggest that the SOT do not have a purely interfacial origin in our samples.

Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses.

The magnetization direction of a metallic magnet has generally been controlled by a magnetic field or by spin-current injection into nanosized magnetic cells. Both these methods use an electric current to control the magnetization direction; therefore, they are energy consuming. Magnetization control using an electric field is considered desirable because of its expected ultra-low power consumption and coherent behaviour. Previous experimental approaches towards achieving voltage control of magnetization switching have used single ferromagnetic layers with and without piezoelectric materials, ferromagnetic semiconductors, multiferroic materials, and their hybrid systems. However, the coherent control of magnetization using voltage signals has not thus far been realized. Also, bistable magnetization switching (which is essential in information storage) possesses intrinsic difficulties because an electric field does not break time-reversal symmetry. Here, we demonstrate a coherent precessional magnetization switching using electric field pulses in nanoscale magnetic cells with a few atomic FeCo (001) epitaxial layers adjacent to a MgO barrier. Furthermore, we demonstrate the realization of bistable toggle switching using the coherent precessions. The estimated power consumption for single switching in the ideal equivalent switching circuit can be of the order of 10(4)k(B)T, suggesting a reduction factor of 1/500 when compared with that of the spin-current-injection switching process.