Relation between image charge and potential alignment corrections for charged defects in periodic boundary conditions.

Charged defects are often studied within the periodic density functional theory (DFT), but this introduces strong finite-size artifacts. In this work, we develop an electrostatic image interaction correction (IIC) method based on the direct solution of the Poisson equation for charge models constructed directly from DFT calculations. These IICs are found to be detail-insensitive, depending almost entirely on bulk dielectric properties. As these IICs are not able to fully explain the observed finite-size scaling, we explore potential alignment in detail and introduce a novel decomposition to separate out different contributions. We find that the two main sources of potential alignment are defect image interactions and changes in the number of atoms present in the supercell. This first effect is accurately predicted by the periodic part of our IIC. The second contribution is unrelated to the IIC and justifies the common observation that the magnitude of finite-size dependence can strongly vary between vacancy and interstitial defects. It can be approximately predicted using atomic radius, but is strongly sensitive to the pseudopotential employed. Combined, these developments provide a new justification for known finite-size scaling rules. Our results suggest that for cubic supercells, the Lany-Zunger IIC, combined with simplified potential alignment between neutral systems, can yield accurate corrections in spite of the simplicity of the approach.

Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

Influence of ions on two-dimensional and three-dimensional atomic force microscopy at fluorite-water interfaces.

Recent advancement in liquid-environment atomic force microscopy (AFM) has enabled us to visualize three-dimensional (3D) hydration structures as well as two-dimensional (2D) surface structures with subnanometer-scale resolution at solid-water interfaces. However, the influence of ions present in solution on the 2D- and 3D-AFM measurements has not been well understood. In this study, we perform atomic-scale 2D- and 3D-AFM measurements at fluorite-water interfaces in pure water and a supersaturated solution of fluorite. The images obtained in these two environments are compared to understand the influence of the ions in solution on these measurements. In the 2D images, we found clear difference in the nanoscale structures but no significant difference in the atomic-scale contrasts. However, the 3D force images show clear difference in the subnanometer-scale contrasts. The force contrasts measured in pure water largely agree with those expected from the molecular dynamics simulation and the solvent tip approximation model. In the supersaturated solution, an additional force peak is observed over the negatively charged fluorine ion site. This location suggests that the observed force peak may originate from cations adsorbed on the fluorite surface. These results demonstrate that the ions can significantly alter the subnanometer-scale force contrasts in the 3D-AFM images.

A mechanism of Cu work function reduction in CsBr/Cu photocathodes.

Thin films of CsBr deposited on Cu(100) have been proposed as next-generation photocathode materials for applications in particle accelerators and free-electron lasers. However, the mechanisms underlying an improved photocathode performance as well as their long-term stability remain poorly understood. We present Density Functional Theory (DFT) calculations of the work function reduction following the application of CsBr thin film coatings to Cu photocathodes. The effects of both flat and rough interface and van der Waals forces are examined. Calculations suggest that CsBr films can reduce the Cu(100) work function by about 1.5 eV, which would explain the observed increase in quantum efficiency (QE) of coated vs. uncoated photocathodes. A model explaining the experimentally observed laser activation of photocathodes is provided whereby the photo-induced creation of Br vacancies and Cs-Br di-vacancies and their subsequent diffusion to the Cu/CsBr interface lead to a further increase in QE after a period of laser irradiation.

Optical signatures of intrinsic electron localization in amorphous SiO2.

We measure and analyse the optical absorption spectra of three silica glass samples irradiated with 1 MeV electrons at 80 K, where self-trapped holes are stable, and use ab initio calculations to demonstrate that these spectra contain a signature of intrinsic electron traps created as counterparts to the holes. In particular, we argue that optical absorption bands peaking at 3.7, 4.7, and 6.4 eV belong to strongly localised electrons trapped at precursor sites in amorphous structure characterized by strained Si-O bonds and O-Si-O angles greater than 132°. These results are important for our understanding of the properties of silica glass and other silicates as well as the reliability of electronic and optical devices and for luminescence dating.

Structure and properties of electronic and hole centers in CsBr from theoretical calculations.

The electronic structure, geometry, diffusion barriers and optical properties of fundamental defects of CsBr are calculated using hybrid functional DFT and TD-DFT methods. The B3LYP functional with a modified exchange contribution has been used in an embedded cluster scheme to model the structure and spectroscopic properties of the self-trapped triplet exciton, interstitial Br atoms and ions, self-trapped holes and Br vacancies. The calculated migration barriers and positions of maxima of optical absorption bands are in good agreement with experiment, justifying the obtained defect geometries. The off-center triplet exciton luminescence energy is also accurately calculated.

Chemical resolution at ionic crystal surfaces using dynamic atomic force microscopy with metallic tips.

We demonstrate that well prepared and characterized Cr tips can provide atomic resolution on the bulk NaCl(001) surface with dynamic atomic force microscopy in the noncontact regime at relatively large tip-sample separations. At these conditions, the surface chemical structure can be resolved yet tip-surface instabilities are absent. Our calculations demonstrate that chemical identification is unambiguous, because the interaction is always largest above the anions. This conclusion is generally valid for other polar surfaces, and can thus provide a new practical route for straightforward interpretation of atomically resolved images.

Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.

Mechanism of laser assisted field evaporation from insulating oxides.

To explain the recent successful three-dimensional atom probe (3DAP) analyses of insulating oxides by laser assisted field evaporation, we investigated the mechanism of the laser-induced field evaporation of oxides by ab initio calculations. The calculated potential energy surfaces (PESs) for the ground and excited states indicated that the activation barrier height for field evaporation is substantially reduced by the accumulation of holes near the tip apex. This would make the direct electronic excitation possible to promote field evaporation along with thermal excitation. These theoretical calculations are supported by experimental observations.

Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors.

We present a methodology for the finite-element discretization of nanoscaled semiconductor devices with atomic resolution. The meshing strategy is based on the use of patterns to decompose the unit cell of the underlying crystallographic structures producing unstructured tetrahedral meshes. The unit cells of the bulk semiconductors and, more importantly, of the interfaces between the substrate and the gate dielectric have been extracted from classical molecular dynamics and density functional theory simulations. A Monte Carlo approach has been then used to place the dopants in nodes of the crystal, replacing silicon atoms. The thus created "atomistic" meshes are used to simulate an ensemble of microscopically different double-gate Si metal-oxide-semiconductor field-effect transistors and the transition region at the Si/SiO_{2} interface. In addition, a methodology to approximate amorphous dielectrics is also presented.

Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2.

We predict, by means of ab initio calculations, stable electron and hole polaron states in perfect monoclinic HfO2. Hole polarons are localized on oxygen atoms in the two oxygen sublattices. An electron polaron is localized on hafnium atoms. Small barriers for polaron hopping suggest relatively high mobility of trapped charges. The one-electron energy levels in the gap, optical transition energies and ESR g-tensor components are calculated.

Dynamics of low-coordinated surface atoms on gold nanocrystallites.

The authors highlight the importance of transient configurations of atoms on the surface of nanocrystallites, and present methodologies for their investigation. A Monte Carlo method has been developed and is used to simulate the thermodynamic equilibrium of nanometer sized Au nanocrystallites, both free and supported on a MgO(100) surface. The authors find that appreciable numbers of atoms transiently occupy adatom positions on Au(111) facets, even at room temperature. This type of dynamically appearing site is usually neglected in relation to catalysis but may have a significant activity (for CO oxidation, for example). They also observe a complex solid-solid roughening transition which involves a variety of transient local atom configurations on the surface of nanocrystallites.

Controlled manipulation of atoms in insulating surfaces with the virtual atomic force microscope.

We predict how single oxygen ions can be manipulated on the MgO (100) surface and demonstrate the possibility of detecting a single-atom event using a noncontact atomic force microscope. The manipulation process is simulated explicitly in real time with a virtual dynamic atomic force microscope including the full response of the instrumentation and demonstrates a strong dependence on temperature. The proposed new atomistic mechanism and protocols for the controlled manipulation of single atoms and vacancies on insulating surfaces may be relevant for anchoring molecules and metal clusters at these surfaces and controlling their electronic properties.

Simple model for DNA adsorption onto a mica surface in 1:1 and 2:1 electrolyte solutions.

We propose a simple theory of interactions between like-charged polyelectrolyte and a surface based on a mean-field Derjaguin-Landau-Verwey-Overbeek approach. It predicts that the van der Waals attractive interactions are responsible for irreversible physisorption of polyelectrolytes onto charged surfaces. We show that monovalent salts contribute significantly to repulsive interactions, while enhancing the attraction very slightly. The effect of the divalent counterions is reverse. Therefore, to achieve the adsorption, the overall repulsion due to 1:1 electrolyte should be counterbalanced by the stronger van der Waals attraction due to the presence of doubly charged counterions in solution. The theory has been validated experimentally against its ability to predict the minimum polymer/surface interaction energy required for the adsorption using DNA/mica in NaCl, MgCl2, and NiCl2 solutions as a test system. The theory explains the mechanism of linear DNA adsorption to a mica surface for different solvent compositions and can be used as a tool for predicting the optimum conditions for AFM experiments on linear polymer systems. The model can also be used to make general conclusions on the conformation of polymer molecules on a surface. We have shown for the DNA/mica surface system that when the adsorption of DNA is mostly governed by long-range van der Waals forces the molecule adopts an ideal 2D conformation. When the adsorption is mostly due to short-range ion-correlation forces, DNA will appear 3D --> 2D projected in agreement with experimental data.

Probing organic layers on the TiO2(110) surface.

In this work, we use first principles simulations to provide features of the dynamic scanning force microscopy imaging of adsorbed organic layers on insulating surfaces. We consider monolayers of formic (HCOOH) and acetic (CH(3)COOH) acid and a mixed layer of acetic and trifluoroacetic acids (CF(3)COOH) on the TiO(2)(110) surface and study their interaction with a silicon dangling bond tip. The results demonstrate that the silicon tip interacts more strongly with the substrate and the COO(-) group than the adsorbed acid headgroups, and, therefore, molecules would appear dark in images. The pattern of contrast and apparent height of molecules is determined by the repulsion between the tip and the molecular headgroups and by significant deformation of the monolayer and individual molecules. The height of the molecule on the surface and the size of the headgroup play a large role in determining access of the tip to the substrate and, hence, the contrast in images. Direct imaging of the molecules themselves could be obtained by providing a functionalized tip with attraction to the molecular headgroups, for example, a positive potential tip.

Interaction of silicon dangling bonds with insulating surfaces.

We use first principles density functional theory calculations to study the interaction of a model dangling bond silicon tip with the surfaces of CaF2, Al2O3, TiO2, and MgO. In each case the strongest interaction is with the highest anions in the surface. We show that this is due to the onset of chemical bonding with the surface anions, which can be controlled by an electric field across the system. Combining our results and previous studies on semiconductor surfaces suggests that using dangling bond Si tips can provide immediate identification of surface species in atomically resolved noncontact atomic force microscopy and facilitate selective measurements of short-range interactions with surface sites.

Mechanism of interstitial oxygen diffusion in hafnia.

We have performed density functional calculations of oxygen incorporation and diffusion in monoclinic hafnia (HfO2) for a range of oxygen charge states. The calculations demonstrate that oxygen favors atomic incorporation and that O2- is the most stable species. We find that oxygen interstitials diffuse via exchange with lattice oxygen sites in hafnia, and that O- species have the smallest diffusion barrier.

Unambiguous interpretation of atomically resolved force microscopy images of an insulator.

The (111) surface of CaF2 was imaged with dynamic mode scanning force microscopy and modeled using atomistic simulation. Both experiment and theory showed a clear triangular contrast pattern in images, and theory demonstrated that the contrast pattern is due to the interaction of a positive electrostatic potential tip with fluorine ions in the two topmost surface layers. We find a good agreement of position and relative height of scan line features between theory and experiment and thus establish for the first time an unambiguous identification of sublattices of an insulator imaged by force microscopy.