Implantable self-aligning fiber-optic optomechanical devices for in vivo intraocular pressure-sensing in artificial cornea.

Artificial cornea is an effective treatment of corneal blindness. Yet, intraocular pressure (IOP) measurements for glaucoma monitoring remain an urgent unmet need. Here, we present the integration of a fiber-optic Fabry-Perot pressure sensor with an FDA-approved keratoprosthesis for real-time IOP measurements using a novel strategy based on optical-path self-alignment with micromagnets. Additionally, an alternative noncontact sensor-interrogation approach is demonstrated using a bench-top optical coherence tomography system. We show stable pressure readings with low baseline drift (<2.8 mm Hg) for >4.5 years in vitro and efficacy in IOP interrogation in vivo using fiber-optic self-alignment, with good initial agreement with the actual IOP. Subsequently, IOP drift in vivo was due to retroprosthetic membrane (RPM) formation on the sensor secondary to surgical inflammation (more severe in the current pro-fibrotic rabbit model). This study paves the way for clinical adaptation of optical pressure sensors with ocular implants, highlighting the importance of controlling RPM in clinical adaptation.

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber.

We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al2O3 glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation.

Octave-spanning coherent supercontinuum generation in silicon on insulator from 1.06 µm to beyond 2.4 µm.

Efficient complementary metal-oxide semiconductor-based nonlinear optical devices in the near-infrared are in strong demand. Due to two-photon absorption in silicon, however, much nonlinear research is shifting towards unconventional photonics platforms. In this work, we demonstrate the generation of an octave-spanning coherent supercontinuum in a silicon waveguide covering the spectral region from the near- to shortwave-infrared. With input pulses of 18 pJ in energy, the generated signal spans the wavelength range from the edge of the silicon transmission window, approximately 1.06 to beyond 2.4 µm, with a -20 dB bandwidth covering 1.124-2.4 µm. An octave-spanning supercontinuum was also observed at the energy levels as low as 4 pJ (-35 dB bandwidth). We also measured the coherence over an octave, obtaining , in good agreement with the simulations. In addition, we demonstrate optimization of the third-order dispersion of the waveguide to strengthen the dispersive wave and discuss the advantage of having a soliton at the long wavelength edge of an octave-spanning signal for nonlinear applications. This research paves the way for applications, such as chip-scale precision spectroscopy, optical coherence tomography, optical frequency metrology, frequency synthesis and wide-band wavelength division multiplexing in the telecom window.

High-power thulium lasers on a silicon photonics platform.

Mid-infrared laser sources are of great interest for various applications, including light detection and ranging, spectroscopy, communication, trace-gas detection, and medical sensing. Silicon photonics is a promising platform that enables these applications to be integrated on a single chip with low cost and compact size. Silicon-based high-power lasers have been demonstrated at 1.55 µm wavelength, while in the 2 µm region, to the best of our knowledge, high-power, high-efficiency, and monolithic light sources have been minimally investigated. In this Letter, we report on high-power CMOS-compatible thulium-doped distributed feedback and distributed Bragg reflector lasers with single-mode output powers up to 267 and 387 mW, and slope efficiencies of 14% and 23%, respectively. More than 70 dB side-mode suppression ratio is achieved for both lasers. This work extends the applicability of silicon photonic microsystems in the 2 µm region.

Multimode phase-matched third-harmonic generation in sub-micrometer-wide anatase TiO2 waveguides.

Third-harmonic generation (THG) has applications ranging from wavelength conversion to pulse characterization, and has important implications for quantum sources of entangled photons. However, on-chip THG devices are nearly unexplored because bulk techniques are difficult to adapt to integrated photonic circuits. Using sub-micrometer-wide polycrystalline anatase TiO2 waveguides, we demonstrate third-harmonic generation on a CMOS-compatible platform. We correlate higher conversion efficiencies with phase-matching between the fundamental pump mode and higher-order signal modes. Using scattered light, we estimate conversion efficiencies as high as 2.5% using femtosecond pulses, and thus demonstrate that multimode TiO2 waveguides are promising for wideband wavelength conversion and new applications ranging from sensors to triplet-photon sources.

Spectral broadening in anatase titanium dioxide waveguides at telecommunication and near-visible wavelengths.

We observe spectral broadening of femtosecond pulses in single-mode anatase-titanium dioxide (TiO(2)) waveguides at telecommunication and near-visible wavelengths (1565 and 794 nm). By fitting our data to nonlinear pulse propagation simulations, we quantify nonlinear optical parameters around 1565 nm. Our fitting yields a nonlinear refractive index of 0.16 × 10(-18) m(2)/W, no two-photon absorption, and stimulated Raman scattering from the 144 cm(-1) Raman line of anatase with a gain coefficient of 6.6 × 10(-12) m/W. Additionally, we report on asymmetric spectral broadening around 794 nm. The wide wavelength applicability and negligible two-photon absorption of TiO(2) make it a promising material for integrated photonics.