The COVID-19 pandemic related stress and the associated factors among the healthcare workers in Kota Setar District Health Office, Malaysia.

BACKGROUND: The COVID-19 pandemic is the most significant worldwide health catastrophe, with massive impacts observed particularly among the healthcare workers. Stress among healthcare workers is a significant and pervasive issue that can have profound implications for both the well-being of healthcare professionals and the quality of patient care. This study aimed to determine the prevalence of stress related to the COVID-19 pandemic and the associated factors among the healthcare workers (HCWs). METHODS: A retrospective cross-sectional study was conducted involving 533 HCWs in Kota Setar District Health Office. Related data was collected between January and June 2021. Stress was measured using the Depression Anxiety Depression Scale 21 (DASS-21). Other variables included in this study were sociodemographic and employment factors. The associated factors and predictors were determined by employing chi-square test and multivariate logistic models. RESULTS: COVID-19 related stress was reported at 10.5%. HCWs who work at the district health offices and those with degree or higher qualifications had 2.3 (AOR = 2.310, 95% CI: 1.177-4.535) and 3 (AOR = 2.899, 95% CI: 1.613-5.211) higher odds of experiencing stress compared to those working in the clinics and had lower qualifications (diploma or less). CONCLUSIONS: The mental wellbeing of the HCWs participated in this study had been affected negatively by the COVID-19 pandemic, resulting in one in 10th of the HCWs were experiencing stress during the COVID-19 pandemic, with higher risk observed among those working at the district health office and HCWs with higher qualifications or ranking. This is expected since COVID-19 was a new and unprecedented outbreak associated with massive number of mortalities that requires active contact tracing and surveillance which commonly conducted at district health office level. Active intervention needed to cope with the overwhelming stress and working condition to ensure effective rehabilitation are in place and quality of work were not jeopardized.

Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer.

The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of relaxation processes that occurs during the cooling step while countering the tensile stresses due to the contrast of thermal expansion coefficient between GaN and Si(111) substrate. Here, we inaugurate the pulse atomic-layer epitaxy (PALE) AlN layer to reinforce the buffer layer to achieve a thick GaN epilayer which is crucial for high performance power devices. The characteristics of grown GaN on Si substrate based on PALE AlN thickness of 0 ~ 100 nm are investigated along with microstructural evolution between AlN NL and composition-graded AlGaN buffer layer. PALE AlN layer deposited with an optimum thickness of 50 nm and above was observed to exhibit a highly uniform coalesced GaN epilayer surface with root-mean square (RMS) roughness of 0.512 nm. The thickness of the PALE AlN layer substantially affected the crystallinity of the top GaN epilayer where the lowest value for symmetric (0 0 0 2) and asymmetric (1 0 -1 2) x-ray rocking curve analysis were achieved, indicating the reduction of threading dislocation density in the growth structure. Transition of the E2 (high) peak from the Raman spectrum shows that the strain compression in GaN epilayer is directly proportional to the thickness of the PALE AlN layer.

Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode.

A simple spin-coating process for fabricating vertical organic light-emitting transistors (VOLETs) is realized by utilizing silver nanowire (AgNW) as a source electrode. The optical, electrical and morphological properties of the AgNW formation was initially optimized, prior VOFET fabrication. A high molecular weight of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] MEH-PPV was used as an organic semiconductor layer in the VOFET in forming a multilayer structure by solution process. It was found that current density and luminance intensity of the VOLET can be modulated by a small magnitude of gate voltage. The modulation process was induced by changing an injection barrier via gate voltage bias. A space-charge-limited current (SCLC) approach in determining transistor mobility has been introduced. This preliminary and fundamental work is beneficial towards all-solution processing display devices.