Erratum: Resonant microwave fields and negative magnetic response, induced by displacement currents in dielectric rings: theory and the first experiments.

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Resonant microwave fields and negative magnetic response, induced by displacement currents in dielectric rings: theory and the first experiments.

The theoretical basis and experimental verification of resonant phenomena in the electromagnetic fields generated by displacement current in the near zone of dielectric ring is presented. According to the traditional viewpoint, the dielectric has an influence on the electric field inside resonator. To the contrary, we demonstrate that the dielectric ring exhibits magnetic properties at resonance. The sliding incidence of plane microwave on this weakly absorbing ring is shown to provide the sharp and deep resonance in the components of generated field; this low loss circuit is operating as a resonant dielectric magnetic dipole. Splitting and broadening of resonance in the pair of these dipoles dependent upon their mutual arrangement is recorded. The phase shift equal to π between the magnetic components of incident and generated wave indicating the formation of negative magnetic response is demonstrated. Perspectives of using of this simple sub wavelength resonant magnetic dipoles in the all-dielectric circuitry are discussed.

Superluminal tunneling of microwaves in smoothly varying transmission lines.

Tunneling of microwaves through a smooth barrier in a transmission line is considered. In contrast to standard wave barriers, we study the case where the dielectric permittivity is positive, and the barrier is caused by the inhomogeneous dielectric profile. It is found that reflectionless, superluminal tunneling can take place for waves with a finite spectral width. The consequences of these findings are discussed, and an experimental setup testing our predictions is proposed.

Broadband antireflection properties of thin heterogeneous dielectric films.

New exactly solvable flexible models of inhomogeneous thin film with smooth and deep variations of dielectric susceptibility epsilon(z) are presented. Formation of cutoff frequencies of such films (as well as the broadband antireflection), controlled by the profiles epsilon(z), is shown. The crucial role of gradients of epsilon(z) in the optics of strongly inhomogeneous media is emphasized.