Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation.

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La(0.7)Sr(0.3)MnO(3) thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. The ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials' functional properties.

Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

Understanding Strain-Induced Phase Transformations in BiFeO3 Thin Films.

Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO3 thin films, which comprises a tetragonal-like (T') and an intermediate S' polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T' phase. This strain-induced phase transformation is investigated through a synergistic combination of first-principles theory and experiments. The results show that the S' phase is energetically very close to the T' phase, but is structurally similar to the bulk rhombohedral (R) phase. By fully characterizing the intermediate S' polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T' and S' phases fosters the above-mentioned reversible phase transformation. This ability to readily transform between the S' and T' polymorphs, which have very different octahedral rotation patterns and c/a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO3 films. Additionally, a blueshift in the band gap when moving from R to S' to T' is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.

A persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film.

The oxygen stoichiometry has a large influence on the physical and chemical properties of complex oxides. Most of the functionality in e.g. catalysis and electrochemistry depends in particular on control of the oxygen stoichiometry. In order to understand the fundamental properties of intrinsic surfaces of oxygen-deficient complex oxides, we report on in situ temperature dependent scanning tunnelling spectroscopy experiments on pristine oxygen deficient, epitaxial manganite films. Although these films are insulating in subsequent ex situ in-plane electronic transport experiments at all temperatures, in situ scanning tunnelling spectroscopic data reveal that the surface of these films exhibits a metal-insulator transition (MIT) at 120 K, coincident with the onset of ferromagnetic ordering of small clusters in the bulk of the oxygen-deficient film. The surprising proximity of the surface MIT transition temperature of nonstoichiometric films with that of the fully oxygenated bulk suggests that the electronic properties in the surface region are not significantly affected by oxygen deficiency in the bulk. This carries important implications for the understanding and functional design of complex oxides and their interfaces with specific electronic properties in catalysis, oxide electronics and electrochemistry.

Oxygen control of atomic structure and physical properties of SrRuO3 surfaces.

Complex oxide thin films and heterostructures have become one of the foci for condensed matter physics research due to a broad variety of properties they exhibit. Similar to the bulk, properties of oxide surfaces can be expected to be strongly affected by oxygen stoichiometry. Here we explore the coupling between atomic structure and physical properties of SrRuO3 (SRO), one of the most well-studied oxide materials. We perform a detailed in situ and ex situ experimental investigation of the surfaces of SRO thin films using a combination of scanning tunneling microscopy (STM), X-ray and ultraviolet photoelectron spectroscopy, SQUID magnetometry, and magnetotransport measurements, as well as ab initio modeling. A number of remarkable linear surface reconstructions were observed by STM and interpreted as oxygen adatoms, favorably adsorbed in a regular rectangular or zigzag patterns. The degree of oxygen coverage and different surface patterns change the work function of the thin films, and modify local electronic and magnetic properties of the topmost atomic layer. The ab initio modeling reveals that oxygen adatoms possess frustrated local spin moments with possible spin-glass behavior of the surface covered by adsorbed oxygen. Additionally, the modeling indicates presence of a pseudo gap on the topmost SrO layer on pristine SrO-terminated surface, suggesting possibility for realization of a surface half-metallic film.

High-temperature magnetic insulating phase in ultrathin La0.67Sr0.33MnO3 films.

We present a study of the thickness dependence of magnetism and electrical conductivity in ultrathin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature increased, indicating a magnetic insulating phase at room temperature. These samples have a Curie temperature of about 560 K with a significant saturation magnetization of 1.2±0.2µ(B)/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n<10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.

Dielectric-constant-enhanced hall mobility in complex oxides.

The high dielectric constant of doped ferroelectric KTa(1-x)Nb(x)O(3) is shown to increase dielectric screening of electron scatterers, and thus to enhance the electronic mobility, overcoming one of the key limitations in the application of functional oxides. These observations are based on transport and optical measurements as well as band structure calculations.

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping.

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.