RESUMO
We investigate theoretically and experimentally the effect of the physical length of gain medium on dynamic mode stability in semiconductor lasers with an intra-cavity filter. In simulation, two types of analysis models were used to examine the lasing properties and to analyze the dynamic mode stability of the external-cavity system, respectively. In experiment, two different kinds of the structures were fabricated and their spectra were analyzed. Both simulation and measurement results show clearly the length of the gain medium has a critical influence on the stability around the peak wavelength of the filter.
Assuntos
Amplificadores Eletrônicos , Lasers Semicondutores , Modelos Teóricos , Refratometria/instrumentação , Simulação por Computador , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.
