Psychiatric Disorders in Drop out from Educational Attainment Attending Mental Health Facilities: A Descriptive Cross Sectional Study.

Studies of the impact of mental disorders on educational attainment are rare. Mental disorders, those beginning in childhood or adolescence may increase the risk of early drop out from education. The latter has been shown to have adverse life-course consequences on individuals such as greater demand on social welfare entitlements. A descriptive cross sectional study was carried out at the department of Psychiatry, Comilla Medical College, Comilla, Bangladesh. All cases were selected from patients attending at Comilla Medical College Hospital and Private Mental Health Facilities in Comilla City from March 2015 to February 2016. We found out the psychiatric disorders and socio-demographic status of patients with educational drop out over the early life course. A total of 50 dropout patients aged 10 to 30 years who fullfiled the enrolment criteria included in the study. Sociodemographic questionnaires, diagnostic information (DSM-5 and ICD-10) as well as an account of a various level of education were used as research instruments. The Frequency tables, summary tables and appropriate graphs were prepared to describe the population characteristics and study finding. The most of the psychiatric morbidity presents in male (62%) and age group of 18-24 years (54%). In this study, anxiety disorders was 8%, behaviour/ impulse control disorders was 8%, mood disorders was 16%, substance use disorders was 24%, schizophrenia spectrum disorders was 12% and composite psychiatric disorders was 32%. Among drop out patient's non- completion of primary education was 14%, non-completion of secondary education was 20%, non- completion of higher secondary education was 24%, not entry to tertiary education was 12% and non-completion of tertiary education was 30%. Among behaviour/impulse control disorders non-completion of primary education was 6%, substance use disorders non-completion of higher secondary education was 10%, mood disorder both non-completion of higher secondary education and non-completion of tertiary education were 6%. Among composite psychiatric disorders non-completion of secondary education, non-completion of higher secondary education and non-completion of tertiary education were 8%, 6% and 12% respectively. Onset of mental disorders and subsequent drop out from education was found in this study. Further multi-centered prospective and population-based studies should be designed to find out the exact situation.

Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for floating gate memory devices.

SiO2/Ge nanocrystals/SiO2 trilayer memory structure has been fabricated by oxidizing and subsequent annealing of self assembled SiGe nanoislands grown by molecular beam epitaxy. The optical and charge storage characteristics of trilayer structures have been studied through Raman spectroscopy and capacitance-voltage measurements, respectively. An anti-clockwise hysteresis in the C-V characteristics indicated the net electron trapping in the floating gate containing Ge nanocrystals. Frequency dependent measurements of device characteristics indicate that neither interface defects nor deep traps are dominant for the charging or discharging processes of nanocrystal floating gates.

Shape and size distribution of molecular beam epitaxy grown self-assembled Ge islands on Si (001) substrates.

We have performed a series of annealing experiments with Ge islands on Si (001) grown by molecular beam epitaxy, in order to clarify issues related to island stability and coarsening. The shape and size distribution of nanoislands as a function of annealing time at a temperature of 650 degrees C have been studied. Optical phonons from Raman spectra have been used as efficient probes to study the evolution of Si(1-x)Ge(x) islands. Both the alloy composition and residual strain in the islands have been determined from the phonon frequencies and Raman intensities. The experimental results are in good agreement with the strain relaxation estimated using X-ray rocking curves. The results indicate that the shape and size distribution of Ge islands are controlled via structural and compositional changes through strain relaxation by the periodic creation and extinction of tiny nanocrystals.