Fast current-induced skyrmion motion in synthetic antiferromagnets.

Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Operando Magnetic Microscopy.

Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using operando magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.

Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultra-fast laser illumination.

Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced motion were recently demonstrated, the stray field resulting from their finite magnetisation and their topological charge limit their minimum size and reliable motion. Antiferromagnetic skyrmions allow to lift these limitations owing to their vanishing magnetisation and net zero topological charge, promising ultra-small and ultra-fast skyrmions. Here, we report on the observation of isolated skyrmions in compensated synthetic antiferromagnets at zero field and room temperature using X-ray magnetic microscopy. Micromagnetic simulations and an analytical model confirm the chiral antiferromagnetic nature of these skyrmions and allow the identification of the physical mechanisms controlling their size and stability. Finally, we demonstrate the nucleation of synthetic antiferromagnetic skyrmions via local current injection and ultra-fast laser excitation.

Energy-efficient ultrafast nucleation of single and multiple antiferromagnetic skyrmions using in-plane spin polarized current.

We numerically investigate the ultrafast nucleation of antiferromagnetic (AFM) skyrmion using in-plane spin-polarized current and present its key advantages over out-of-plane spin-polarized current. We show that the threshold current density required for the creation of AFM skyrmion is almost an order of magnitude lower for the in-plane spin-polarized current. The nucleation time for the AFM skyrmion is found to be [Formula: see text] ps for the corresponding current density of 1-[Formula: see text]. We also demonstrate ultrafast nucleation of multiple AFM skyrmions that is possible only with in-plane spin polarized current and discuss how the current pulse width can be used to control the number of AFM skyrmions. The results show more than one order of magnitude improvement in energy consumption for ultrafast nucleation of AFM skyrmions using in-plane spin-polarized current, which is promising for applications such as logic gates, racetrack memory, and neuromorphic computing.

Helium Ions Put Magnetic Skyrmions on the Track.

Magnetic skyrmions are deemed to be the forerunners of novel spintronic memory and logic devices. While their observation and their current-driven motion at room temperature have been demonstrated, certain issues regarding their nucleation, stability, pinning, and skyrmion Hall effect still need to be overcome to realize functional devices. Here, we demonstrate that focused He+-ion-irradiation can be used to create and guide skyrmions in racetracks. We show that the reduction of the perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction in the track defined by ion-irradiation leads to the formation of stable isolated skyrmions. Current-driven skyrmion motion experiments and simulations reveal that the skyrmions move along the irradiated track, resulting in the suppression of the skyrmion Hall effect, and that the maximum skyrmion velocity can be enhanced by tuning the magnetic properties. These results open up a new path to nucleate and guide magnetic skyrmions in racetrack devices.

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Film Heterostructures.

Magnetic skyrmions are topological spin-textures having immense potential for energy efficient spintronic devices. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature in remnant state employing magnetic force microscopy. It is shown that these skyrmions consisting of ultrathin ferromagnetic CFA Heusler alloy result from strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable combinations of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results provide a significant step towards designing of room temperature spintronic devices based on skyrmions in full Heusler alloy based thin films.

A high-speed single sideband generator using a magnetic tunnel junction spin torque nano-oscillator.

An important property of spin-torque nano-oscillators (STNOs) is their ability to produce a frequency modulated (FM) signal, which is very critical for communication applications. We here demonstrate a novel single sideband (SSB) modulation phenomenon using a magnetic tunnel junction (MTJ)-based STNO, which saves transmission bandwidth and in principle should minimize attenuation for wireless communication. Experimentally, lower single sidebands (LSSBs) have been successfully demonstrated over a wide range of modulation frequency, f m = 150 MHz-1 GHz. The observed LSSBs are determined by the intrinsic properties of the device, which can be modeled well by a nonlinear frequency and amplitude modulation formulation and reproduced in macrospin simulations. Moreover, our macrospin simulation results show that the range of modulation current and modulation frequency for generating SSBs can be controlled by the field-like torque and biasing conditions.