RESUMO
Diamond, as a wide band-gap semiconductor material, has the potential to be exploited under a wide range of extreme operating conditions, including those used for radiation detectors. The radiation tolerance of a single-crystal chemical vapor deposition (scCVD) diamond detector was therefore investigated while heating the device to elevated temperatures. In this way, operation under both high-temperature and high-radiation conditions could be tested simultaneously. To selectively introduce damage in small areas of the detector material, a 5 MeV scanning proton microbeam was used as damaging radiation. The charge collection efficiency (CCE) in the damaged areas was monitored using 2 MeV protons and the ion beam induced charge (IBIC) technique, indicating that the CCE decreases with increasing temperature. This decreasing trend saturates in the temperature range of approximately 660 K, after which CCE recovery is observed. These results suggest that the radiation hardness of diamond detectors deteriorates at elevated temperatures, despite the annealing effects that are also observed. It should be noted that the diamond detector investigated herein retained its very good spectroscopic properties even at an operation temperature of 725 K (≈2% for 2 MeV protons).
RESUMO
Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as already demonstrated for different device applications. In this work we apply this fabrication method to the electrical excitation of color centers in diamond, demonstrating the potential of electrical stimulation in diamond-based single-photon sources. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs, 10 µm spaced, were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current injection above an effective voltage threshold of 150 V, which enabled the stimulation of a stable EL emission. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced isolated electroluminescent spots where non-classical light emission in the 560-700 nm spectral range was observed. The spectral and auto-correlation features of the EL emission were investigated to qualify the non-classical properties of the color centers.
RESUMO
In this paper, time-of-flight elastic recoil detection analysis spectrometer with a newly constructed gas ionization detector for energy detection is presented. The detector is designed in the axial (Bragg) geometry with a 3 × 3 array of 50 nm thick Si3N4 membranes as an entrance window. 40 mbar isobutane gas was sufficient to stop a 30 MeV primary iodine beam as well as all recoils in the detector volume. Spectrometer and detector performances were determined showing significant improvement in the mass and energy resolution, respectively, comparing to the spectrometer with a standard silicon particle detector for an energy measurement.
RESUMO
A position sensitive detection system based on the microchannel plate detector has been constructed and installed at the existing time of flight (TOF) spectrometer in order to perform a kinematic correction and improve the surface time/depth resolution of elastic recoil detection analysis (ERDA) system. The position resolution of the detector has been tested for different types of ions and anode voltages. TOF spectra of recoiled O ions from SiO(2) and F from CaF(2) were collected in coincidence with position sensitive detector signal. Kinematic correction of TOF spectra improved surface time/depth resolution by approximately 20% for our system; however even higher improvements could be obtained in larger solid angle TOF-ERDA systems.
