RESUMO
We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations.
RESUMO
Solids and liquids are both known to exhibit Cassie-Baxter states, where a drop or a solid nanoparticle is maintained on top of pillars due to wetting forces. We point out that due to elastic strain, solid nanocrystals exhibit a behavior different from that of liquids. First, the equilibrium Cassie-Baxter state on a single pillar exhibits a spontaneous symmetry breaking due to elastic effects. The second consequence of elasticity is the existence of stable partially impaled states, resulting from a compromise between wetting forces which favor impalement and elastic strain which resists impalement. Based on kinetic Monte Carlo simulations which include elastic strain, we discuss these effects and we propose a global phase diagram for the stability of nanocrystals on nanopillars.