Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications.

This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, USET, and ILRS are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10-10 A to (4.2 ± 0.6) × 10-9 A, respectively. Furthermore, the HRS/LRS ratio and USET are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.

Quark and Gluon Form Factors in Four-Loop QCD.

We compute the photon-quark and Higgs-gluon form factors to four-loop order within massless perturbative quantum chromodynamics. Our results constitute ready-to-use building blocks for N^{4}LO cross sections for Drell-Yan processes and gluon-fusion Higgs boson production at the LHC. We present complete analytic expressions for both form factors and show several of the most complicated master integrals.

Systemic Administration of Allogeneic Cord Blood Mononuclear Cells in Adults with Severe Acute Contusion Spinal Cord Injury: Phase 1/2a Pilot Clinical Study-Safety and Primary Efficacy Evaluation.

OBJECTIVE: Phase 1 of the SUBSCI I/IIa (Systemic Umbilical Cord Blood Administration in Patients with Acute Severe Contusion Spinal Cord Injury) study focused on safety and primary efficacy of multiple systemic infusions of allogeneic unrelated human umbilical cord blood mononuclear cells in patients with severe acute spinal cord contusion having severe neurologic deficit. The primary end point was safety. The secondary end point was the restoration of motor and sensory function in lower limbs within a 1-year period. METHODS: Ten patients with acute contusion spinal cord injury (SCI) and American Spinal Injury Association (ASIA) level A/B deficit were enrolled into phase 1. Patients were treated with 4 infusions of group-matched and rhesus-matched cord blood samples after primary surgery within 3 days after SCI. All patients were followed up for 12 months after SCI. Safety was assessed using adverse events classification depending on severity and relation to cell therapy. Primary efficacy was assessed using dynamics of deficit (ASIA scale). RESULTS: The overall number of adverse events reached 419 in 10 patients. Only 2 were estimated as possibly related to cell therapy, and the remaining 417 were definitely unrelated. Both adverse events were mild and clinically insignificant. No signs of immunization were found in participants. Analysis of clinical outcomes also showed that cell therapy promotes significant functional restoration of motor function. CONCLUSIONS: The data obtained suggest that systemic administration of allogeneic, non-human leukocyte antigen-matched human umbilical cord blood is safe and shows primary efficacy in adults with severe acute contusion SCI and ASIA level A/B deficit.

Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures.

This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values RHRS and RLRS and the highest value of Uset = 2.7 ± 0.4 V. The samples with the ZnO:In and ZnO:Pd bottom electrode showed the lowest Uset and Ures values. An increase in the number of laser pulses from 1000 to 5000 was shown to lead to an increase in the thickness of the nanocrystalline ZnO film from 7.2 ± 2.5 nm to 53.6 ± 18.3 nm. The dependence of electrophysical parameters (electron concentration, electron mobility, and resistivity) on the thickness of the forming-free nanocrystalline ZnO film for the TiN/ZnO/W structure was investigated. The endurance test and homogeneity test for TiN/ZnO/W structures were performed. The structure Al2O3/TiN/ZnO/W with a nanocrystalline ZnO thickness 41.2 ± 9.7 nm was shown to be preferable for the manufacture of ReRAM and memristive neuromorphic systems due to the highest value of RHRS/RLRS = 2307.8 ± 166.4 and low values of Uset = 1.9 ± 0.2 V and Ures = -1.3 ± 0.5 V. It was demonstrated that the use of the TiN top electrode in the Al2O3/TiN/ZnO memristor structure allowed for the reduction in Uset and Ures and the increase in the RHRS/RLRS ratio. The results obtained can be used in the manufacturing of resistive-switching nanoscale devices for neuromorphic computing based on the forming-free nanocrystalline ZnO oxide films.

Towards Scalable Large-Area Pulsed Laser Deposition.

One of the significant limitations of the pulsed laser deposition method in the mass-production-technologies of micro- and nanoelectronic and molecular device electronic fabrication is the issue of ensuring deposition of films with uniform thickness on substrates with large diameter (more than 100 mm) since the area of the laser spot (1-5 mm2) on the surface of the ablated target is incommensurably smaller than the substrate area. This paper reports the methodology that allows to calculate the distribution profile of the film thickness over the surface substrate with a large diameter, taking into account the construction and technological parameters of the pulsed laser deposition equipment. Experimental verification of the proposed methodology showed that the discrepancy with the experiment does not exceed 8%. The modeling of various technological parameters influence on the thickness uniformity has been carried out. Based on the modeling results, recommendations and parameters are proposed for manufacturing uniform thickness films. The results allow for increasing the film thickness uniformity with the thickness distribution < 5% accounts for ~ 31% of 300 mm diameter substrate.

Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films.

We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switching effect in ZnO nanocrystalline films is investigated. We demonstrated that nanocrystalline zinc oxide films, fabricated at certain regimes, show the electroforming-free resistive switching. It was shown, that the forming-free nanocrystalline ZnO film demonstrated a resistive switching effect and switched at a voltage 1.9 ± 0.2 V from 62.42 ± 6.47 (RHRS) to 0.83 ± 0.06 kΩ (RLRS). The influence of ZnO surface morphology on the resistive switching effect is experimentally investigated. It was shown, that the ZnO nanocrystalline film exhibits a stable resistive switching effect, which is weakly dependent on its nanoscale structure. The influence of technological parameters on the resistive switching effect in a forming-free ZnO nanocrystalline film is investigated. The results can be used for fabrication of new-generation micro- and nanoelectronics elements, including random resistive memory (ReRAM) elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films.

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10-4 Torr to 3 × 10-2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm-3 to (42.64 ± 4.46) × 1017 cm-3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

Quark mass relations to four-loop order in perturbative QCD.

We present results for the relation between a heavy quark mass defined in the on-shell and minimal subtraction (MS[over ¯]) scheme to four-loop order. The method to compute the four-loop on-shell integral is briefly described and the new results are used to establish relations between various short-distance masses and the MS[over ¯] quark mass to next-to-next-to-next-to-leading order accuracy. These relations play an important role in the accurate determination of the MS[over ¯] heavy quark masses.

Ultraviolet properties of N=4 supergravity at four loops.

We demonstrate that pure N=4 supergravity is ultraviolet divergent at four loops. The form of the divergence suggests that it is due to the rigid U(1) duality-symmetry anomaly of the theory. This is the first known example of an ultraviolet divergence in a pure ungauged supergravity theory in four dimensions. We use the duality between color and kinematics to construct the integrand of the four-loop four-point amplitude, whose ultraviolet divergence is then extracted by standard integration techniques.

Three-loop static potential.

We compute the three-loop corrections to the potential of two heavy quarks. In particular, we consider in this Letter the purely gluonic contribution which provides, in combination with our previous fermion corrections, the complete answer at three loops.

Polymorphonuclear blood leukocytes and restenosis after intracoronary implantation of drug-eluting stents.

Peripheral blood contents of osteonectin-positive progenitor cells and polymorphonuclear granulocytes were examined by flow cytometry in 38 patients after myocardial revascularisation with drug-eluting stents. Repeat coronary angiography performed 6-12 months after stent implantation revealed in-stent restenosis in 15 patients and its absence in 23 patients. The plasma levels of osteonectin-positive progenitor cells, neutrophils, and basophils did not differ in patients with and without restenosis. Eosinophil blood levels in patients with and without restenosis were 262+/-68 and 124+/-67 cells/microL (mean+/-SD, p<0.001), respectively. Only one of 19 patients (5%) with eosinophil content lower than the distribution median for the entire group developed restenosis, whereas in the group with eosinophil contents higher than the median (n=19) restenosis occurred in 14 patients (74%, p<0.001). Our findings suggest that the frequency of restenoses after stenting is related to high peripheral blood eosinophil content.

Two-loop Sudakov form factor in a theory with a mass gap.

The two-loop Sudakov form factor is computed in a U(1) model with a massive gauge boson and a U(1)xU(1) model with mass gap. We analyze the result in the context of hard and infrared evolution equations and establish a matching procedure which relates the theories with and without mass gap, setting the stage for the complete calculation of the dominant two-loop corrections to electroweak processes at high energy.

Mass of the eta b and alpha s from the nonrelativistic renormalization group.

We sum up the next-to-leading logarithmic corrections to the heavy-quarkonium hyperfine splitting, using the nonrelativistic renormalization group. On the basis of this result, we predict the mass of the eta(b) meson to be M(eta(b))=9421+/-11(th)+9-8(delta alpha(s)) MeV. The experimental measurement of M(eta(b)) with a few MeV error would be sufficient to determine alpha(s)(M(Z)) with an accuracy of +/-0.003. For the hyperfine splitting in charmonium, the use of the nonrelativistic renormalization group brings the perturbative prediction significantly closer to the experimental figure.

Heavy-quarkonium creation and annihilation with O(alpha(3)(s)ln(alpha(s)) accuracy.

We calculate the O(alpha(3)(s)ln(alpha(s)) contributions to the heavy-quarkonium production and annihilation rates. Our result sheds new light on the structure of the high-order perturbative corrections and opens a new perspective for a high-precision theoretical analysis. We also determine the three-loop anomalous dimensions of the nonrelativistic vector and pseudoscalar currents.