Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection.

We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb∕In(1-x)Al(x)Sb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm(2), with a maximum responsivity of 20 kΩ∕T, and a noise-equivalent field of 0.87µT∕Hz at 100 K.

Room temperature ballistic transport in InSb quantum well nanodevices.

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

A nanoscale Ti∕GaAs metal-semiconductor hybrid sensor for room temperature light detection.

We report an individually addressable Ti∕GaAs metal-semiconductor hybrid optical nanosensor with positive photoresistance and a sensitivity that increases as the device dimensions shrink. The underlying physics relates to the crossover from ballistic to diffusive transport of the photoinduced carriers and the geometric enhancement of the effect associated with a Schottky-barrier-coupled parallel metal shunt layer. For a 250 nm device under 633 nm illumination we observe a specific detectivity of D(*)=5.06×10(11) cm √Hz∕W with a dynamic response of 40 dB.

Magnetic properties of S = 1/2 quasi-triangular lattice materials: Cu(2(1-x))Zn(2x)(OH)3NO3/(C7H15COO)·mH2O.

We have investigated the structural and magnetic properties of two classes of spin S = 1/2 antiferromagnetic quasi-triangular lattice materials: Cu(2(1-x))Zn(2x)(OH)(3)NO(3) (0 ≤ x ≤ 0.65) and its long chain organic derivatives Cu(2(1-x))Zn(2x)(OH)(3)(C(7)H(15)COO)·mH(2)O (0 ≤ x ≤ 0.29). The series of layered structure compounds constitute a substitutional magnetic system, in which spin S = 1/2Cu(2+) ions and nonmagnetic Zn(2+) ions are arranged on a two-dimensional quasi-triangular lattice. For the nitrate compounds we found that the substitution of Zn(2+) ions can continuously decrease the Néel temperature, T(N), but never completely remove the magnetic order. In addition, the frustration effect in these materials is suppressed by a three-dimensional interlayer interaction. On the other hand, the corresponding long chain alkyl carboxylic acid group of intercalated materials, Cu(2(1-x))Zn(2x)(OH)(3)(C(7)H(15)COO)·mH(2)O, show spin-glass-like behavior, which is caused by the interplay of geometric frustration and mixed sign interactions. A tentative explanation for these findings is proposed in terms of a cluster-glass picture.

Dimensional crossover and weak localization in a 90 nm n-GaAs thin film.

We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T

Extraordinary electroconductance in metal-semiconductor hybrid structures.

We report the phenomenon of extraordinary electroconductance in microscopic metal-semiconductor hybrid structures fabricated from GaAs epitaxial layer and a Ti thin film shunt. Four-lead Van der Pauw structures show a gain of 5.2% in electroconductance under +2.5 kVcm with zero shunt bias. The increase in the sample conductance results from the thermionic field emission of electrons and the geometrical amplification. A model provides good agreement with the experimental data and clearly demonstrates the geometry dependence of the field effect in extraordinary electroconductance (EEC). The differences between EEC devices and field effect transistors, such as junction field effect transistor (FET) and Schottky barrier gate FET, are discussed.

Analytical modeling of symmetry breaking in extraordinary optoconductance.

Extraordinary optoconductance (EOC) devices with symmetric leads have been shown to have a symmetric positional dependence when exposed to focused illumination. While advantageous for a position sensitive detector (PSD), this symmetric positional dependence, when the device is uniformly illuminated, leads to a minimization of the output voltage. Here, with the aid of a previously employed point charge model, we address two ways to break the symmetry and recover the output signal. The first is to impose uniform illumination but only on half the sample. This method has practical limitations as the device is miniaturized to the nanoscale. The second is via asymmetric placement of the voltage probes in a four-probe measurement. Crucial to the discussion is the effect of the surface charge density. Several ways of modeling the induced surface charge density are presented. Utilizing the above described approach, optimal asymmetric lead positions are found.

Noninvasive measurement of optic nerve-head compliance by laser Doppler velocimetry.

It is proposed that individuals who are susceptible to glaucomatous damage are those with relatively weak mechanical support at the optic nerve head. A noninvasive method of measuring tissue compliance is described. Preliminary results, obtained in vitro and in vivo, demonstrate the feasibility of the method.

The microscopic protein structure of the lens with a theory for cataract formation as determined by Raman spectroscopy of intact bovine lenses.

Intact bovine lenses have been studied using the polarized Raman spectroscopic technique. A brief theoretical and experimental review of Raman spectroscopy is presented. From the dependence of the Raman depolarization ratio on the propagation direction of the incident radiation we have determined that the uniaxial qualities of the lens result from microscopic anisotropy and have established the quantitative positional correlation of specific chemical bonds with respect to the lens optic axis. In particular, the hydrogen bonded linear CONH groups of the antiparallel beta-pleated sheet are preferentially oriented in directions orthogonal to the lens optic axis. The Raman spectra of intact lenses do not exhibit bands at positions characteristic of either the alpha-helix or the random coil protein structure. The antiparallel beta-pleated sheet protein microstructure and the lens fiber cross-sectional macrostructure exhibit a remarkable similarity. This similarity may be causal and is consistent with the protein concentration of the lens, the birefringent properties observed by both Lenhard and Brewster, the CONH bond angle distribution with respect to the optic axis, and the lens anatomy. It is suggested that cortical cataracts are caused by fluctuations in protein orientational order.