Raman Spectroscopy and Spectral Signatures of AlScN/Al2O3.

III-V solid solutions are sensitive to growth conditions due to their stochastic nature. The highly crystalline thin films require a profound understanding of the material properties and reliable means of their determination. In this work, we have investigated the Raman spectral fingerprint of Al1-xScxN thin films with Sc concentrations x = 0, 0.14, 0.17, 0.23, 0.32, and 0.41, grown on Al2O3(0001) substrates. The spectra show softening and broadening of the modes related to the dominant wurtzite phase with increasing Sc content, in agreement with the corresponding XRD results. We investigated the primary scattering mechanism responsible for the immense modes' linewidths by comparing the average grain sizes to the phonon correlation length, indicating that alloying augments the point defect density. The low-frequency Raman bands were attributed to the confined spherical acoustic modes in the co-forming ScN nanoparticles. Temperature-dependent Raman measurements enabled the temperature coefficient of the E2(high) mode to be determined for all Sc concentrations for the precise temperature monitoring in AlScN-based devices.

Spectroscopic insight into post-synthetic surface modification of porous glass beads as a silica model system.

Applications in catalysis, adsorption and separation require high surface areas as provided by mesoporous materials. Particularly attractive is the class of silica-based mesoporous glasses, which are mechanically and chemically very stable and post-synthetically modifiable allowing specific surface properties to be introduced. One of the catalytically relevant moieties is the sulfonic acid group. To optimize the performance of mesoporous glass systems, analytical methods are required to determine the state of surface modification and its effect on the porosity. To this end, we here propose a specific combination of spectroscopic methods: The porosity during the introduction of thiol functionalities and subsequent oxidation into sulfonic acid groups on the surface of porous micro glass beads is investigated using hyperpolarized 129Xe NMR, revealing that during the two modification steps the textural properties are preserved. The grafting mode as well as the surface coverage are determined using 29Si MAS NMR. The oxidation step is demonstrated to be complete as probed by Raman spectroscopy and 13C MAS NMR. Our combined analysis demonstrates the successful and complete surface modification as well as the maintenance of the free accessibility of the mesopore system.

Spontaneous alloying of ultrasmall non-stoichiometric Ag-In-S and Cu-In-S quantum dots in aqueous colloidal solutions.

The effect of spontaneous alloying of non-stoichiometric aqueous Ag-In-S (AIS) and Cu-In-S (CIS) quantum dots (QDs) stabilized by surface glutathione (GSH) complexes was observed spectroscopically due to the phenomenon of band bowing typical for the solid-solution Cu(Ag)-In-S (CAIS) QDs. The alloying was found to occur even at room temperature and can be accelerated by a thermal treatment of colloidal mixtures at around 90 °C with no appreciable differences in the average size observed between alloyed and original individual QDs. An equilibrium between QDs and molecular and clustered metal-GSH complexes, which can serve as "building material" for the new mixed CAIS QDs, during the spontaneous alloying is assumed to be responsible for this behavior of GSH-capped ternary QDs. The alloying effect is expected to be of a general character for different In-based ternary chalcogenides.

Ultra-small aqueous glutathione-capped Ag-In-Se quantum dots: luminescence and vibrational properties.

We introduce a direct aqueous synthesis of luminescent 2-3 nm Ag-In-Se (AISe) quantum dots (QDs) capped by glutathione (GSH) complexes, where sodium selenosulfate Na2SeSO3 is used as a stable Se2- precursor. A series of size-selected AISe QDs with distinctly different positions of absorption and PL bands can be separated from the original QD ensembles by using anti-solvent-induced size-selective precipitation. The AISe-GSH QDs emit broadband PL with the band maximum varying from 1.65 eV (750 nm) to 1.90 eV (650 nm) depending on the average QD size and composition. The PL quantum yield varies strongly with basic synthesis parameters (ratios of constituents, Zn addition, duration of thermal treatment, etc.) reaching 4% for "core" AISe and 12% for "core/shell" AISe/ZnS QDs. The shape and position of PL bands is interpreted in terms of the model of radiative recombination of a self-trapped exciton. The AISe-GSH QDs reveal phonon Raman spectra characteristic for small and Ag-deficient tetragonal Ag-In-Se QDs. The ability of ultra-small AISe QDs to support such "bulk-like" vibrations can be used for future deeper insights into structural and optical properties of this relatively new sort of QDs.

Mercury-indium-sulfide nanocrystals: A new member of the family of ternary in based chalcogenides.

A general synthesis approach of aqueous glutathione-capped ternary Ag-In-S, Cu-In-S, and Hg-In-S nanocrystals (NCs) is introduced, allowing the NC composition to be varied in a broad range. Ternary Hg-In-S (HIS) NCs are reported for the first time and found to have the same tetragonal chalcopyrite motif as Cu-In-S and Ag-In-S NCs, corroborated by phonon spectra, while X-ray photoelectron spectroscopic data indicate mercury to be present as Hg+ in the Hg-In-S NCs. Colloidal HIS and Hg-In-S/ZnS NCs showed little or no variations of the spectral width of the photoluminescence band upon NC size selection, temperature variation in a broad range of 10-350 K, deposition of a ZnS shell, or postsynthesis annealing. All these observations are similar to those reported earlier for Ag-In-S and Ag-In-S/ZnS NCs and allowed us to assume a general photoluminescence mechanism for all three ternary compounds, based on the model of radiative self-trapped exciton recombination.

Comprehensive Raman study of epitaxial silicene-related phases on Ag(111).

The investigation of the vibrational properties of epitaxial silicene and two-dimensional (2D) Si structures on the silver(111) surface aims for a better understanding of the structural differences and of the simplification of the seemingly complex phase diagrams reported over the last years. The spectral signatures of the main silicene phases epitaxially grown on Ag(111) were obtained using in situ Raman spectroscopy. Due to the obvious 2D nature of various epitaxial silicene structures, their fingerprints consist of similar sets of Raman modes. The reduced phase diagram also includes other Si phases, such as amorphous and crystalline silicon, which emerge on the Ag surface at low and high preparation temperatures, respectively. The Raman signatures obtained along with their interpretations provide the referential basis for further studies and for potential applications of epitaxial silicene.

HED-TIE: A wafer-scale approach for fabricating hybrid electronic devices with trench isolated electrodes.

Organic-inorganic hybrid electronic devices (HEDs) offer opportunities for functionalities that are not easily obtainable with either organic or inorganic materials individually. In the strive for down-scaling the channel length in planar geometry HEDs, the best results were achieved with electron beam lithography or nanoimprint lithography. Their application on the wafer level is, however, cost intensive and time consuming. Here, we propose trench isolated electrode (TIE) technology as a fast, cost effective, wafer-level approach for the fabrication of planar HEDs with electrode gaps in the range of 100 nm. We demonstrate that the formation of the organic channel can be realized by deposition from solution as well as by the thermal evaporation of organic molecules. To underline one key feature of planar HED-TIEs, namely full accessibility of the active area of the devices by external stimuli such as light, 6,13-bis (triisopropylsilylethynyl) (TIPS)-pentacene/Au HED-TIEs are successfully tested for possible application as hybrid photodetectors in the visible spectral range.