Gross morphology and adhesion-associated physical properties of Drosophila larval salivary gland glue secretion.

One of the major functions of the larval salivary glands (SGs) of many Drosophila species is to produce a massive secretion during puparium formation. This so-called proteinaceous glue is exocytosed into the centrally located lumen, and subsequently expectorated, serving as an adhesive to attach the puparial case to a solid substrate during metamorphosis. Although this was first described almost 70 years ago, a detailed description of the morphology and mechanical properties of the glue is largely missing. Its main known physical property is that it is released as a watery liquid that quickly hardens into a solid cement. Here, we provide a detailed morphological and topological analysis of the solidified glue. We demonstrated that it forms a distinctive enamel-like plaque that is composed of a central fingerprint surrounded by a cascade of laterally layered terraces. The solidifying glue rapidly produces crystals of KCl on these alluvial-like terraces. Since the properties of the glue affect the adhesion of the puparium to its substrate, and so can influence the success of metamorphosis, we evaluated over 80 different materials for their ability to adhere to the glue to determine which properties favor strong adhesion. We found that the alkaline Sgs-glue adheres strongly to wettable and positively charged surfaces but not to neutral or negatively charged and hydrophobic surfaces. Puparia formed on unfavored materials can be removed easily without leaving fingerprints or cascading terraces. For successful adhesion of the Sgs-glue, the material surface must display a specific type of triboelectric charge. Interestingly, the expectorated glue can move upwards against gravity on the surface of freshly formed puparia via specific, unique and novel anatomical structures present in the puparial's lateral abdominal segments that we have named bidentia.

Mordellistenaplatypoda, a new species of tumbling flower beetle from the island of Ischia in Italy (Coleoptera, Mordellidae).

Mordellistena A. Costa, 1854, the most species-rich genus of tumbling flower beetles comprises more than 800 species worldwide and more than 150 reported from Europe. Here, a new species Mordellistena(s. str.)platypoda is described from the island of Ischia in Italy. The species hypothesis is based primarily on morphological characters which are visualised using scanning electron microscopy images, high-resolution photographs, and drawings. The species hypothesis is supported by analysis of a 658 bp fragment of cytochrome c oxidase subunit I (COI). Divergences in the COI gene are evaluated using maximum likelihood and Bayesian inference analyses. The species delimitation is assessed using Assemble Species by Automatic Partitioning (ASAP) and Poisson Tree Processes (PTP) methods. Genetic distances are visualised using multidimensional scaling. Mordellistenaplatypoda Selnekovic, Goffová & Kodada, sp. nov. is recovered as a well-separated species by both molecular and morphological analyses. Our results show that M.platypoda Selnekovic, Goffová & Kodada, sp. nov. is most closely related to M.tarsata Mulsant, 1856, although the two species differ significantly in vestiture colouration, presence of lateral ctenidia on the third metatarsomere, and presence of sexual dimorphism on the protibia. The results indicate that such morphological differences, which were traditionally used to distinguish between species groups, may in fact be present between closely related species. Interestingly, examination of the numerous museum material did not reveal additional specimens of the new species, and therefore M.platypoda Selnekovic, Goffová & Kodada, sp. nov. is currently known only from the Italian island of Ischia.

Skyrmion Formation in Nanodisks Using Magnetic Force Microscopy Tip.

We demonstrated numerically the skyrmion formation in ultrathin nanodisks using a magnetic force microscopy tip. We found that the local magnetic field generated by the magnetic tip significantly affects the magnetization state of the nanodisks and leads to the formation of skyrmions. Experimentally, we confirmed the influence of the local field on the magnetization states of the disks. Micromagnetic simulations explain the evolution of the magnetic state during magnetic force microscopy scanning and confirm the possibility of skyrmion formation. The formation of the horseshoe magnetic domain is a key transition from random labyrinth domain states into the skyrmion state. We showed that the formation of skyrmions by the magnetic probe is a reliable and repetitive procedure. Our findings provide a simple solution for skyrmion formation in nanodisks.

Dual-tip magnetic force microscopy with suppressed influence on magnetically soft samples.

Standard magnetic force microscopy (MFM) is considered as a powerful tool used for magnetic field imaging at nanoscale. The method consists of two passes realized by the magnetic tip. Within the first one, the topography pass, the magnetic tip directly touches the magnetic sample. Such contact perturbs the magnetization of the sample explored. To avoid the sample touching the magnetic tip, we present a new approach to magnetic field scanning by segregating the topological and magnetic scans with two different tips located on a cut cantilever. The approach minimizes the disturbance of sample magnetization, which could be a major problem in conventional MFM images of soft magnetic samples. By cutting the cantilever in half using the focused ion beam technique, we create one sensor with two different tips--one tip is magnetized, and the other one is left non-magnetized. The non-magnetized tip is used for topography and the magnetized one for the magnetic field imaging. The method developed we call dual-tip magnetic force microscopy (DT-MFM). We describe in detail the dual-tip fabrication process. In the experiments, we show that the DT-MFM method reduces significantly the perturbations of the magnetic tip as compared to the standard MFM method. The present technique can be used to investigate microscopic magnetic domain structures in a variety of magnetic samples and is relevant in a wide range of applications, e.g., data storage and biomedicine.

New approach to local anodic oxidation of semiconductor heterostructures.

We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-delta doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (approximately 50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures.

Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices.

The local anodic oxidation (LAO) by the tip of atomic force microscope (AFM) is used for fabrication of nanometer-scaled structures and devices. We study the technology of LAO applied to semiconductor heterostructures, theoretically and experimentally as well. The goal is to improve the LAO process itself, i.e., to create narrow LAO lines that form high-energy barriers in the plane with the 2D electron gas. In the first part we show the electric field distribution in the system tip-sample during LAO. For samples with low-conductive cap layer the maximum electric field is shifted apart the tip apex, which leads to wide oxide lines. Our Monte Carlo (MC) calculations show how the height of the energy barrier in the system depends on the geometry of the created lines (trenches), and on voltage applied to the structure. Based on the calculations, we have proposed a novel LAO technology and applied it to InGaP/AlGaAs/GaAs heterostructure with doping layer only 6 nm beneath the surface. The doping layer can be oxidized easily by the AFM tip in this case, and the oxide objects can be removed by several etchants. This approach to the LAO technology leads to narrow LAO trenches (approximately 60 nm) and to energy barriers high enough for room- and low-temperature applications.