1.
Adv Mater
; 26(42): 7170-7, 2014 Nov 12.
Artigo
em Inglês
| MEDLINE
| ID: mdl-25205206
RESUMO
A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu(2+) to Cu(1+), Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).