Dopant Control of Solution-Processed CuI:S for Highly Conductive p-Type Transparent Electrode.

Copper iodide (CuI) has garnered considerable attention as a promising alternative to p-type transparent conducting oxides owing to its low cation vacancy formation energy, shallow acceptor level, and readily modifiable conductivity via doping. Although sulfur (S) doping through liquid iodination has exhibited high efficacy in enhancing the conductivity with record high figure of merit (FOM) of 630 00 MΩ-1, solution-processed S-doped CuI (CuI:S) for low-cost large area fabrication has yet to be explored. Here, a highly conducting CuI:S thin-film for p-type transparent conducting electrode (TCE) is reported using low temperature solution-processing with thiourea derivatives. The optimization of thiourea dopant is determined through a comprehensive acid-base study, considering the effects of steric hindrance. The modification of active groups of thioureas facilitated a varying carrier concentration range of 9 × 1018-2.52 × 1020 cm-3 and conductivities of 4.4-390.7 S cm-1. Consequently, N-ethylthiourea-doped CuI:S exhibited a FOM value of 7 600 MΩ-1, which is the highest value among solution-processed p-type TCEs to date. Moreover, the formulation of CuI:S solution for highly conductive p-type TCEs can be extended to CuI:S inks, facilitating high-throughput solution-processes such as inkjet printing and spray coating.

Hierarchical Nanoscale Structuring of Solution-Processed 2D van der Waals Networks for Wafer-Scale, Stretchable Electronics.

Two-dimensional (2D) semiconductors are promising for next-generation electronics that are lightweight, flexible, and stretchable. Achieving stretchability with suppressed crack formation, however, is still difficult without introducing lithographically etched micropatterns, which significantly reduces active device areas. Herein, we report a solution-based hierarchical structuring to create stretchable semiconducting films that are continuous over wafer-scale areas via self-assembly of two-dimensional nanosheets. Electrochemically exfoliated MoS2 nanosheets with large lateral sizes (∼1 µm) are first assembled into a uniform film on a prestrained thermoplastic substrate, followed by strain relief of the substrate to create nanoscale wrinkles. Subsequent strain-relief cycles with the presence of soluble polymer films produce hierarchical wrinkles with multigenerational structures. Stretchable MoS2 films are then realized by curing an elastomer directly on the wrinkled surface and dissolving the thermoplastic. Three-generation hierarchical MoS2 wrinkles are resistant to cracking up to nearly 100% substrate stretching and achieve drastically enhanced photoresponsivity compared to the flat counterpart over the visible and NIR regimes, while the flat MoS2 film is beneficial in creating strain sensors because of its strain-dependent electrical response.

Revisiting Solution-Based Processing of van der Waals Layered Materials for Electronics.

Following the significant discovery of van der Waals (vdW) layered materials with diverse electronic properties over more than a decade ago, the scalable production of high-quality vdW layered materials has become a critical goal to enable the transformation of fundamental studies into practical applications in electronics. To this end, solution-based processing has been proposed as a promising technique to yield vdW layered materials in large quantities. Moreover, the resulting dispersions are compatible with cost-effective device fabrication processes such as inkjet printing and roll-to-roll manufacturing. Despite these advantages, earlier works on solution-based processing methods (i.e., direct liquid-phase exfoliation or alkali-metal intercalation) have several challenges in achieving high-performance electronic devices, such as structural polydispersity in thickness and lateral size or undesired phase transformation. These challenges hinder the utilization of the solution-processed materials in the limited fields of electronics such as electrodes and conductors. In the meantime, the groundbreaking discovery of another solution-based approach, molecular intercalation-based electrochemical exfoliation, has shown significant potential for the use of vdW layered materials in scalable electronics owing to the nearly ideal structure of the exfoliated samples. The resulting materials are highly monodispersed, atomically thin, and reasonably large, enabling the preparation of electronically active thin-film networks via successful vdW interface formation. The formation of vdW interfaces is highly important for efficient plane-to-plane charge transport and mechanical stability under various deformations, which are essential to high-performance, flexible electronics. In this Perspective, we survey the latest developments in solution-based processing of vdW layered materials and their electronic applications while also describing the field's future outlook in the context of its current challenges.

All-Solution-Processed Van der Waals Heterostructures for Wafer-Scale Electronics.

2D van der Waals (vdW) materials have been considered as potential building blocks for use in fundamental elements of electronic and optoelectronic devices, such as electrodes, channels, and dielectrics, because of their diverse and remarkable electrical properties. Furthermore, two or more building blocks of different electronic types can be stacked vertically to generate vdW heterostructures with desired electrical behaviors. However, such fundamental approaches cannot directly be applied practically because of issues such as precise alignment/positioning and large-quantity material production. Here, these limitations are overcome and wafer-scale vdW heterostructures are demonstrated by exploiting the lateral and vertical assembly of solution-processed 2D vdW materials. The high exfoliation yield of the molecular intercalation-assisted approach enables the production of micrometer-sized nanosheets in large quantities and its lateral assembly in a wafer-scale via vdW interactions. Subsequently, the laterally assembled vdW thin-films are vertically assembled to demonstrate various electronic device applications, such as transistors and photodetectors. Furthermore, multidimensional vdW heterostructures are demonstrated by integrating 1D carbon nanotubes as a p-type semiconductor to fabricate p-n diodes and complementary logic gates. Finally, electronic devices are fabricated via inkjet printing as a lithography-free manner based on the stable nanomaterial dispersions.