Cement-Based Repair Materials and the Interface with Concrete Substrates: Characterization, Evaluation and Improvement.

Surface damages usually occur in concrete structures. In order to restore the functions and prolong the service life of concrete structures, their surface damages should be repaired in time. This paper reviews the main requirements for repair materials for concrete structures and the most used inorganic repair materials, such as cement-based materials, alkali-activated materials and polymer modified inorganic repair materials. Moreover, techniques to characterize and even improve the interfaces between these repair materials and concrete substrate are summarized. Cement-based material has the advantages of good mechanical properties and consistency with concrete substrate while having the problems of high shrinkage and low flexibility. Polymer modified materials were found as having lower shrinkage and higher flexural strength. Increasing the roughness or humidity of the surface, adding fibers and applying interfacial agents can improve the bond strength between cement-based repair materials and concrete substrates. All of these repair materials and techniques can help to build a good interfacial bonding, and mechanisms of how they improve the interface are discussed in this article. These are of great importance in guaranteeing the effectiveness of the repair of the concrete surface and to guide the research and development of new repair materials.

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 106 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.

The recent exploration of semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) with atomic thickness has taken both the scientific and technological communities by storm. Extensively investigated TMD that are accessible by large-scale synthetic methods materials are remarkably stable, such as MoS2 and WSe2 . They allow superior gate control due to their 2D nature and favorable electronic transport properties, thus suggesting a bright future for digital and RF electronics. In this review, the latest developments in the controlled synthesis of large scale TMDs are firstly introduced by discussing various approaches. The major obstacles that must be overcome to achieve wafer-scale, uniform, and high-quality TMD films for practical electronic applications are included. Advances in the electronic transport studies of TMDs are presented, such as doping, contact engineering, and mobility improvement, which contribute to overall device performance. A perspective and a look at the future for this field is provided in closing.

WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment.

Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe2/MoS2 hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe2/SnSe2 heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.

Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts.

The abundant electronic and optical properties of 2D materials that are just one-atom thick pave the way for many novel electronic applications. One important application is to explore the band-to-band tunneling in the heterojunction built by different 2D materials. Here, a gate-controlled WSe2 transistor is constructed by using different work function metals to form the drain (Pt) and source (Cr) electrodes. The device can be gate-modulated to exhibit three modes of operation, i.e., the tunneling mode with remarkable negative differential resistance, the transition mode with a second electron tunneling phenomenon for backward bias, and finally the conventional diode mode with rectifying characteristics. In contrast to the heterojunctions built by different 2D materials, these devices show significantly enhanced tunneling current by two orders of magnitude, which may largely benefit from the clean interfaces. These results pave the way toward design of novel electronic devices using the modulation of metal work functions.

Controlling the work function of molybdenum disulfide by in situ metal deposition.

Control of the work function of molybdenum disulfide (MoS2) under ultrathin metal was investigated using in situ metal deposition and direct ultraviolet photoelectron spectroscopy measurement in an ultra-high vacuum system. When the metal thickness turned from two dimensional into bulk, the work function was also raised up at the nickel-MoS2 interface, barely changed at the titanium-MoS2 interface and lowered at the hafnium-MoS2 interface. Meanwhile, the mechanisms of charge transfer and band alignment with metal deposition were also discussed. The Schottky barrier at metal-MoS2 interfaces could be tailored by both types and thicknesses of deposited metal. The low work function metal was a good indicator for MoS2 contact electrodes. It paved the way towards future high performance MoS2 device applications.