Reactive molecular dynamics simulations of hydration shells surrounding spherical TiO2 nanoparticles: implications for proton-transfer reactions.

In many potential applications, nanoparticles are typically in an aqueous medium. This has strong influence on the stability, optical properties and reactivity, in particular for their functionalization. Therefore, the understanding of the chemistry at the interface between the solvent and the nanoparticle is of utmost importance. In this work, we present a comparative ReaxFF reactive molecular dynamics investigation on spherical TiO2 nanoparticles (NSs) of realistic size, with diameters from 2.2 to 4.4 nm, immersed in a large drop of bulk water. After force field validation for its use for a curved anatase TiO2 surface/water interface, we performed several simulations of the TiO2 nanoparticles of increasing size in a water drop. We found that water can be adsorbed jointly in a molecular and dissociative way on the surface. A Langmuir isotherm indicating an adsorption/desorption mechanism of water on the NS is observed. Regarding the dissociative adsorption, atomistic details reveal two different mechanisms, depending on the water concentration around the NS. At low coverage, the first mechanism involves direct dissociation of a single water molecule, whereas, at higher water coverage, the second mechanism is a proton transfer reaction involving two water molecules, also known as Grotthuss-like mechanism. Thermal annealing simulations show that several water molecules remain on the surface in agreement with the experimental reports. The capacity of adsorption is higher for the 2.2 and 3.0 nm NSs than for the 4.4 nm NS. Finally, a comparative investigation with flat surfaces indicates that NSs present a higher water adsorption capacity (undissociated and dissociated) than flat surfaces, which can be rationalized considering that NSs present many more low-coordinated Ti atoms available for water adsorption.

Thermal Stability of Organic Monolayers Grafted to Si(111): Insights from ReaxFF Reactive Molecular Dynamics Simulations.

We used the ReaxFF reactive molecular dynamics simulations to investigate the chemical mechanisms and kinetics of thermal decomposition processes of silicon surfaces grafted with different organic molecules via Si-C bonds at atomistic level. In this work, we considered the Si(111) surface grafted with n-alkyl (ethyl, propyl, pentyl, and decyl) layers in 50% coverage and, Si-CH3, Si-CCCH3 and Si-CHCHCH3 layers in full coverage. Si radicals primarily formed by the homolytic cleavage of Si-C bonds play a key role in the dehydrogenation processes that lead to the decomposition of the monolayers. Contrary to commonly proposed mechanisms that only involve a single Si atom center, we found that the main decomposition pathways require two Si lattice atoms to proceed. The ability of surface silyl radicals to dehydrogenate the organic molecules depends on the flexibility of the carbon backbones of the organic molecules as well as on the C-H bond strength. The dehydrogenation of n-alkyl chains mainly involves the H atoms of the ß-carbon (leading to 1-alkene desorption). However, as the surface coverage decreases, the flexibility of the alkyl chains allows for the dehydrogenation of any methylene group and even the terminal methyl group of the long decyl layer. On the contrary, the rigid carbon backbone of the Si-CCCH3 and Si-CHCHCH3 moieties hinders the dehydrogenation of the terminal methyl group, which confers these layers a higher thermal stability. For all layers, the surface ends up mostly hydrogenated as Si-C bonds break and new Si-H bonds are formed during the dehydrogenation reactions.

The role of the organic layer functionalization in the formation of silicon/organic layer/metal junctions with coinage metals.

The design of silicon/alkyl layer/metal junctions for the formation of optimal top metal contacts requires knowledge of the mechanistic and energetic aspects of the interactions of metal atoms with the modified surface. This involves (a) the interaction of the metal with the terminal groups of the organic layer, (b) the diffusion of metal atoms through the organic layer and (c) the reactions of metal atoms with the silicon surface atoms. The diffusion through the monolayer and the metal catalyzed breakage of Si-C bonds must be avoided to obtain high quality junctions. In this work, we performed a comprehensive density functional theory investigation to identify the reaction pathways of all these processes. In the absence of a reactive terminal group, gold atoms may penetrate through a compact alkyl monolayer on Si(111) with no energy barrier. However, the presence of thiol terminal groups introduces a high energy barrier which blocks the diffusion of metals into the monolayer. The diffusion barriers increase in the order Ag < Au < Cu and correlate with the stability of metal-thiolate complexes whereas the barriers for the formation of metal silicides increase in the order Cu < Au < Ag in correlation with the increasing metallic radii. The reactivity of gold clusters with functionalized Si(111) surfaces was also investigated. Metal silicide formation can only be avoided by a compact monolayer terminated by a reactive functional group. The mechanistic and energetic picture obtained in this work contributes to understanding of the factors that influence the quality of top metal contacts during the formation of silicon/organic layer/metal junctions.

On the mechanism of silicon activation by halogen atoms.

Despite the widespread use of chlorinated silicon as the starting point for further functionalization reactions, the high reactivity of this surface toward a simple polar molecule such as ammonia still remains unclear. We therefore undertook a comprehensive investigation of the factors that govern the reactivity of halogenated silicon surfaces. The reaction of NH3 was investigated comparatively on the Cl-Si(100)-2 × 1, Br-Si(100)-2 × 1, H-Si(100)-2 × 1, and Si(100)-2 × 1 surfaces using density functional theory. The halogenated surfaces show considerable activation with respect to the hydrogenated surface. The reaction on the halogenated surfaces proceeds via the formation of a stable datively bonded complex in which a silicon atom is pentacoordinated. The activation of the halogenated Si(100)-2 × 1 surfaces toward ammonia arises from the large redistribution of charge in the transition state that precedes the breakage of the Si-X bond and the formation of the Si-NH2 bond. This transition state has an ionic nature of the form Si-NH3(+)X(-). Steric effects also play an important role in surface reactivity, making brominated surfaces less reactive than chlorinated surfaces. The overall activation-energy barriers on the Cl-Si(100)-2 × 1 and Br-Si(100)-2 × 1 surfaces are 12.3 and 19.9 kcal/mol, respectively, whereas on the hydrogenated Si(100)-2 × 1 surface the energy barrier is 38.3 kcal/mol. The reaction of ammonia on the chlorinated surface is even more activated than on the bare Si(100)-2 × 1 surface, for which the activation barrier is 21.3 kcal/mol. Coadsorption effects in partially aminated surfaces and in the presence of reaction products increase activation-energy barriers and have a blocking effect for further reactions of NH3.