RESUMO
The atom oxidation states were determined using the binding energies of the core S2p-, Cu2p-, Cr2p-, and Ln3d-levels in CuCr0.99Ln0.01S2 (Ln = Dy-Lu) solid solutions. The charge distribution on the matrix elements (Cu, Cr, and S) remained unaffected after cationic substitution. The sulfur atoms were found to be in the S2- oxidation state, the copper-Cu+, and the chromium-Cr3+. The cationic substitution of the initial CuCrS2-matrix occurred via the isovalent mechanism. The obtained results were compared with the electrophysical properties for CuCr0.99Ln0.01S2. The measured carrier concentration was from 1017 to 1018 cm-3. The largest Seebeck coefficient value of 157 µV/K was measured for CuCr0.99Yb0.01S2 at 500 K. The cationic substitution with lanthanides allowed one to enhance the Seebeck coefficient of the initial CuCrS2-matrix.
RESUMO
The charge distribution study of metal atoms in CuCr0.99Ln0.01S2 (Ln = Pr-Tb) solid solutions was carried out using X-ray photoelectron spectroscopy (XPS). The analysis of the binding energy of S2p, Cu2p, Cr2p, Ln3d and Ln4d levels allows one to determine the oxidation state of atoms. Copper atoms were found to be monovalent. Chromium and lanthanide atoms were found to be in the trivalent state. Sulfur atoms were found to be in the divalent state. Cationic substitution was found to occur via an isovalent mechanism of Cr3+ to Ln3+. The obtained results were used for the interpretation of the Seebeck coefficient increase for CuCr0.99Ln0.01S2 solid solutions in contrast to the initial CuCrS2 matrix. The largest Seebeck coefficient values of 142 and 148 µV/K were observed at 500 K for CuCr0.99Sm0.01S2 and CuCr0.99Pr0.01S2, respectively. The obtained values are 1.4 times greater in comparison with those for the initial matrix (105 µV/K).
RESUMO
The work reports a comprehensive study of the Seebeck coefficient, electrical resistivity and heat capacity of CuCrS2 in a wide temperature range of 100-740 K. It was shown that the value of the Seebeck coefficient is significantly affected by the sample treatment procedure. The order-to-disorder (ODT) phase transition was found to cause a metal-insulator transition (MIT). It was established that the ODT diminishes the Seebeck coefficient at high temperatures (T > 700 K). The DFT calculations of the CuCrS2 electronic structure showed that the localization of copper atoms in octahedral sites makes the band gap vanish due to the MIT. The decrease of CuCrS2 electrical resistivity in the ODT temperature region corresponds to the MIT.
RESUMO
The misfit monolayered sulfides, (GdS)1.20NbS2, (DyS)1.22NbS2, (Gd0.1Dy0.9S)1.21NbS2, (Gd0.2Dy0.8S)1.21NbS2, and (Gd0.5Dy0.5S)1.21NbS2 and the misfit bilayered sulfide (GdS)0.60NbS2 were synthesized via sulfurization under flowing CS2/H2S gas and consolidated by pressure-assisted sintering. The thermoelectric properties of the monolayered and bilayered sulfides perpendicular (in-plane) and parallel (out-of-plane) to the pressing direction were investigated over a temperature range of 300-873 K. The crystal grains in all the sintered samples were preferentially oriented perpendicular to the pressing direction, which resulted in highly anisotropic electrical and thermal transport properties. All the sintered samples exhibited degenerate n-type semiconductor-like behavior, leading to a large thermoelectric power factor. The misfit layered structure yielded low lattice thermal conductivity. The evolution of the monolayered structures into bilayered structures affected their thermoelectric properties. The thermoelectric figure of merit (ZT) of monolayered (GdS)1.20NbS2 was higher than that of bilayered (GdS)0.60NbS2 due to the larger power factor and lower lattice thermal conductivity of (GdS)1.20NbS2. The lattice thermal conductivity of the monolayered sulfide was lower in (Gd x Dy1-x S)1.2+q NbS2 solid solutions. The large power factor and low lattice thermal conductivity allowed a ZT value of 0.13 at 873 K in (Gd0.5Dy0.5S)1.21NbS2 perpendicular to the pressing direction.
