Using electronic coherence to probe a deeply embedded quantum well in bimetallic Pb/Ag films on Si(111).

We report an experiment in which we utilize electronic coherence to probe a deeply embedded thin film as a quantum well. An atomically uniform Ag film prepared on Si(111) was covered by Pb films up to 70 A thick, and the resulting electronic structure was examined by angle-resolved photoemission spectroscopy. Despite a photoemission escape depth of just a few Angströms and an incommensurate Pb/Ag interface, the data reveal a striking Fabry-Pérot-like structure characteristic of an Ag etalon buried deeply under the Pb overlayers. Our simulations clearly illustrate the manifest coherence of the electronic structures, permitting the characterization of the embedded Ag quantum well.

Coherent electronic fringe structure in incommensurate silver-silicon quantum wells.

Atomically uniform silver films grown on highly doped n-type Si(111) substrates show fine-structured electronic fringes near the silicon valence band edge as observed by angle-resolved photoemission. No such fringes are observed for silver films grown on lightly doped n-type substrates or p-type substrates, although all cases exhibited the usual quantum-well states corresponding to electron confinement in the film. The fringes correspond to electronic states extending over the silver film as a quantum well and reaching into the silicon substrate as a quantum slope, with the two parts coherently coupled through an incommensurate interface structure.