Power-dependent Raman analysis of highly strained Si nanobridges.

Strain analysis of complex three-dimensional nanobridges conducted via Raman spectroscopy requires careful experimentation and data analysis supported by simulations. A method combining micro-Raman spectroscopy with finite element analysis is presented, enabling a detailed understanding of strain-sensitive Raman data measured on Si nanobridges. Power-dependent measurements are required to account for the a priori unknown scattering efficiency related to size and geometry. The experimental data is used to assess the validity of previously published phonon deformation potentials.

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%.

Strained Si nanowires are among the most promising transistor structures for implementation in very large-scale integration due to of their superior electrostatic control and enhanced transport properties. Realizing even higher strain levels within such nanowires are thus one of the current challenges in microelectronics. Here we achieve 4.5% of elastic strain (7.6 GPa uniaxial tensile stress) in 30 nm wide Si nanowires, which considerably exceeds the limit that can be obtained using SiGe-based virtual substrates. Our approach is based on strain accumulation mechanisms in suspended dumbbell-shaped bridges patterned on strained Si-on-insulator, and is compatible with complementary metal oxide semiconductor fabrication. Potentially, this method can be applied to any tensile prestrained layer, provided the layer can be released from the substrate, enabling the fabrication of a variety of strained semiconductors with unique properties for applications in nanoelectronics, photonics and photovoltaics. This method also opens up opportunities for research on strained materials.

Grain growth resistance and increased hardness of bulk nanocrystalline fcc cobalt prepared by a bottom-up approach.

Bulk nanocrystalline cobalt was prepared from reducing flame-spray-derived cobalt nanopowders exclusively in the face-centred cubic (fcc) modification. Compacts of approximately 60% density were obtained from uniaxial compression at room temperature and showed a strong resistance towards grain growth upon subsequent sintering to 90% relative density. The nanocrystalline structure remained stable well above 1000 degrees C and resulted in a pore-rich metal with about 10(15) nanovoids cm(-3). These sintered compacts displayed an up to three times higher bulk hardness if compared to conventional cobalt and local ductility as evidenced from scanning electron microscopy and nanoindentation. The strong grain-growth resistance and consequent increase in material hardness are discussed in respect of the presence of nanovoids, twin boundaries and material contamination.

Dimensional control of brittle nanoplatelets. A statistical analysis of a thin film cracking approach.

Nanoparticles are essential building blocks for nanotechnology. In this paper we demonstrate a novel method to create nanoplatelets by thin film cracking. The thickness of the resulting platelets is determined by the film thickness, and their aspect ratio is controlled by the total strain and the elastic mismatch between substrate and thin film. Platelets can be created from any brittle film independently of microstructure and materials class. The feasibility of this method is substantiated by a statistical analysis of the fracture process.

Local plasticity of Al thin films as revealed by x-ray microdiffraction.

Grain-to-grain interactions dominate the plasticity of Al thin films and establish effective length scales smaller than the grain size. We have measured large strain distributions and their changes under plastic strain in 1.5-microm-thick Al 0.5% Cu films using a 0.8-microm-diameter white x-ray probe at the Advanced Light Source. Strain distributions arise not only from the distribution of grain sizes and orientation, but also from the differences in grain shape and from stress environment. Multiple active glide plane domains have been found within single grains. Large grains behave like multiple smaller grains even before a dislocation substructure can evolve.

Scanning X-ray microdiffraction with submicrometer white beam for strain/stress and orientation mapping in thin films.

Scanning X-ray microdiffraction (microSXRD) combines the use of high-brilliance synchrotron sources with the latest achromatic X-ray focusing optics and fast large-area two-dimensional-detector technology. Using white beams or a combination of white and monochromatic beams, this technique allows for the orientation and strain/stress mapping of polycrystalline thin films with submicrometer spatial resolution. The technique is described in detail as applied to the study of thin aluminium and copper blanket films and lines following electromigration testing and/or thermal cycling experiments. It is shown that there are significant orientation and strain/stress variations between grains and inside individual grains. A polycrystalline film when investigated at the granular (micrometer) level shows a highly mechanically inhomogeneous medium that allows insight into its mesoscopic properties. If the microSXRD data are averaged over a macroscopic range, results show good agreement with direct macroscopic texture and stress measurements.

Selective specimen preparation for TEM observation of the cross-section of individual carbon nanotube/metal junctions

We present here an efficient method to prepare a transmission electron microscopy (TEM) specimen for selective observation of the cross-section of individual nanoscale structures. As a typical example, the cross-sectional TEM observation of a quasi-one-dimensional material - a nano-electronic component based on an individual carbon nanotube - is presented.

Quantitative electron spectroscopic imaging studies of microelectronic metallization layers.

The combination of focused ion beam (FIB) sample preparation and quantitative electron spectroscopic imaging is an ideal tool for the investigation of layered structures used in microelectronic metallization schemes. In the present work, Si3N4/Cu/Si3N4/SiO2/Si and Al/TiN/Ti/SiO2/Si metallization layers produced by physical vapour deposition are investigated. We apply series of energy filtered images in the low loss region for a mapping of the sample thickness which makes it possible to refine the parameters of the FIB process. We also show how series of energy filtered images in the core loss region can be used to obtain elemental distribution images and chemical bonding information on these samples on a nanometre scale. For materials with a small grain size and/or a strong variation in Bragg orientation, the intensity distribution of the elemental map is strongly influenced by the superimposed Bragg contrast. This detrimental effect can be reduced greatly by using hollow cone illumination, as is demonstrated for polycrystalline Cu. One striking feature observed in Cu layers prepared with FIB is strong, regularly arranged contrast variations caused by subsurface defects in the Cu grains. We suppose that these defects are a consequence of a strong interaction of Ga atoms from the FIB with Cu.