RESUMO
The complex interrelationships among thermoelectric parameters mean that a priori design of high-performing materials is difficult. However, band engineering can allow the power factor to be optimized through enhancement of the Seebeck coefficient. Herein, using layered Sb2Si2Te6 and Sc2Si2Te6 as model systems, we comprehensively investigate and compare their thermoelectric properties by employing density functional theory combined with semiclassical Boltzmann transport theory. Our simulations reveal that Sb2Si2Te6 exhibits superior electrical conductivity compared to Sc2Si2Te6 due to lower scattering rates and more pronounced band dispersion. Remarkably, despite Sb2Si2Te6 exhibiting a lower lattice thermal conductivity and superior electrical conductivity, Sc2Si2Te6 is predicted to achieve an extraordinary dimensionless figure of merit (ZT) of 3.51 at 1000 K, which significantly surpasses the predicted maximum ZT of 2.76 for Sb2Si2Te6 at 900 K. We find the origin of this behavior to be a combined increase in band (valley) degeneracy and anisotropy upon switching the conduction band orbital character from Sb p to Sc d, yielding a significantly improved Seebeck coefficient. This work suggests that enhancing band degeneracy and anisotropy (complexity) through compositional variation is an effective strategy for improving the thermoelectric performance of layered materials.
RESUMO
Thermoelectric materials offer an unambiguous solution to the ever-increasing global demand for energy by harnessing the Seebeck effect to convert waste heat to electrical energy. Mixed-anion materials are ideal candidate thermoelectric materials due to their thermal stability and potential for "phonon-glass, electron-crystal" behaviour. In this study, we use density-functional theory (DFT) calculations to investigate Y2Ti2O5S2, a cation-deficient Ruddlesden-Popper system, as a potential thermoelectric. We use hybrid DFT to calculate the electronic structure and band alignment, which indicate a preference for n-type doping with highly anisotropic in-plane and the out-of-plane charge-carrier mobilities as a result of the anisotropy in the crystal structure. We compute phonon spectra and calculate the lattice thermal conductivity within the single-mode relaxation-time approximation using lifetimes obtained by considering three-phonon interactions. We also calculate the transport properties using the momentum relaxation-time approximation to solve the electronic Boltzmann transport equations. The predicted transport properties and lattice thermal conductivity suggest a maximum in-plane ZT of 1.18 at 1000 K with a carrier concentration of 2.37 × 1020 cm-3. Finally, we discuss further the origins of the low lattice thermal conductivity, in particular exploring the possibility of nanostructuring to lower the phonon mean free path, reduce the thermal conductivity, and further enhance the ZT. Given the experimentally-evidenced high thermal stability and the favourable band alignment found in this work, Y2Ti2O5S2 has the potential to be a promising high-temperature n-type thermoelectric.
