Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Quartz microbalance device for transfer into ultrahigh vacuum systems.

An uncomplicated quartz microbalance device has been developed which is transferable into ultrahigh vacuum (UHV) systems. The device is extremely useful for flux calibration of different kinds of material evaporators. Mounted on a commercial specimen holder, the device allows fast quartz microbalance transfer into the UHV and subsequent positioning exactly to the sample location where subsequent thin film deposition experiments shall be carried out. After backtransfer into an UHV sample stage, the manipulator may be loaded in situ with the specimen suited for the experiment. The microbalance device capability is demonstrated for monolayer and submonolayer vanadium depositions with an achieved calibration sensitivity of less the 0.001 ML coverage.