Mixtures of glyme and aprotic-protic ionic liquids as electrolytes for energy storage devices.

Ionic liquids (ILs) have been proven to be promising electrolytes for electrochemical energy storage devices such as supercapacitors and lithium ion batteries. In the last years, due to deficiency in storage of lithium on earth, innovative systems, such as sodium-based devices, attracted considerable attention. IL-based electrolytes have been proposed also as electrolytes for these devices. Nevertheless, in the case of these systems, the advantages and limits of IL-based electrolytes need to be further investigated. In this work we report an investigation about the chemical-physical properties of mixtures containing bis(2-methoxyethyl)ether diglyme (2G), which is presently considered as one of the most interesting solvents for sodium-based devices, and the ionic liquids 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (Pyr14TFSI) and 1-butylpyrrolidinium bis(trifluoromethanesulfonyl)imide (PyrH4TFSI). The conductivities, viscosities, and densities of several mixtures of 2G and these ILs have been investigated. Furthermore, their impact on the electrochemical behaviour of activated carbon composite electrodes has been considered. The results of this investigation indicate that these mixtures are promising electrolytes for the realization of advanced sodium-based devices.

Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires.

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from ∼0.8 to ∼1.1 µm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to ∼25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser.

The ability to generate phase-stabilized trains of ultrafast laser pulses by mode-locking underpins photonics research in fields, such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser systems has hindered their realization at the nanoscale. Here we demonstrate that GaAs-AlGaAs nanowire lasers are capable of emitting pairs of phase-locked picosecond laser pulses with a repetition frequency up to 200 GHz when subject to incoherent pulsed optical excitation. By probing the two-pulse interference spectra, we show that pulse pairs remain mutually coherent over timescales extending to 30 ps, much longer than the emitted laser pulse duration (≤3 ps). Simulations performed by solving the optical Bloch equations produce good quantitative agreement with experiments, revealing how the phase information is stored in the gain medium close to transparency. Our results open the way to phase locking of nanowires integrated onto photonic circuits, optical injection locking and applications, such as on-chip Ramsey comb spectroscopy.