Intrinsic Thermal Desorption in a 3D Printed Multifunctional Composite CO2 Sorbent with Embedded Heating Capability.

Efficient removal of CO2 from enclosed environments is a significant challenge, particularly in human space flight where strict restrictions on mass and volume are present. To address this issue, this study describes the use of a multimaterial, layer-by-layer, additive manufacturing technique to directly print a structured multifunctional composite for CO2 sorption with embedded, intrinsic, heating capability to facilitate thermal desorption, removing the need for an external heat source from the system. This multifunctional composite is coprinted from an ink formulation based on zeolite 13X, and an electrically conductive sorbent ink formulation, which includes metal particles blended with the zeolite. The composites are characterized using analytical and imaging tools and then tested for CO2 adsorption/desorption. The resistivity of the conductive sorbent is <2 mΩ m, providing a temperature increase up to 200 °C under 7 V applied bias, which is sufficient to trigger CO2 desorption. The CO2 adsorption capability of the conductive zeolite ink appears to be unaffected by the presence of the conductive particles, meaning a large fraction of the total mass of the structured composite device is functional.

Dynamic and Tunable Threshold Voltage in Organic Electrochemical Transistors.

In recent years, organic electrochemical transistors (OECTs) have found applications in chemical and biological sensing and interfacing, neuromorphic computing, digital logic, and printed electronics. However, the incorporation of OECTs in practical electronic circuits is limited by the relative lack of control over their threshold voltage, which is important for controlling the power consumption and noise margin in complementary and unipolar circuits. Here, the threshold voltage of OECTs is precisely tuned over a range of more than 1 V by chemically controlling the electrochemical potential at the gate electrode. This threshold voltage tunability is exploited to prepare inverters and amplifiers with improved noise margin and gain, respectively. By coupling the gate electrode with an electrochemical oscillator, single-transistor oscillators based on OECTs with dynamic time-varying threshold voltages are prepared. This work highlights the importance of electrochemistry at the gate electrode in determining the electrical properties of OECTs, and opens a path toward the system-level design of low-power OECT-based electronics.

Performance of in-pixel circuits for photon counting arrays (PCAs) based on polycrystalline silicon TFTs.

Photon counting arrays (PCAs), defined as pixelated imagers which measure the absorbed energy of x-ray photons individually and record this information digitally, are of increasing clinical interest. A number of PCA prototypes with a 1 mm pixel-to-pixel pitch have recently been fabricated with polycrystalline silicon (poly-Si)-a thin-film technology capable of creating monolithic imagers of a size commensurate with human anatomy. In this study, analog and digital simulation frameworks were developed to provide insight into the influence of individual poly-Si transistors on pixel circuit performance-information that is not readily available through empirical means. The simulation frameworks were used to characterize the circuit designs employed in the prototypes. The analog framework, which determines the noise produced by individual transistors, was used to estimate energy resolution, as well as to identify which transistors contribute the most noise. The digital framework, which analyzes how well circuits function in the presence of significant variations in transistor properties, was used to estimate how fast a circuit can produce an output (referred to as output count rate). In addition, an algorithm was developed and used to estimate the minimum pixel pitch that could be achieved for the pixel circuits of the current prototypes. The simulation frameworks predict that the analog component of the PCA prototypes could have energy resolution as low as 8.9% full width at half maximum (FWHM) at 70 keV; and the digital components should work well even in the presence of significant thin-film transistor (TFT) variations, with the fastest component having output count rates as high as 3 MHz. Finally, based on conceivable improvements in the underlying fabrication process, the algorithm predicts that the 1 mm pitch of the current PCA prototypes could be reduced significantly, potentially to between ~240 and 290 µm.

Electronic Structure and Properties of Organic Bulk-Heterojunction Interfaces.

The electronic structure and physical mechanisms of carrier generation and transport in the organic bulk heterojunction are reviewed. The electronic structure describes the bands and band-tail states, the band alignment at the bulk-heterojunction interface, and the overall density-of-states model. The different electronic character of excitons and mobile charge is discussed, the former being highly molecular and the latter more delocalized. Dissociation of the exciton via the charge-transfer (CT) states is attributed to weak binding of the CT state arising from charge delocalization. Carrier transport and charge collection is strongly influenced by the presence of localized band-tail states. Recombination is attributed primarily to transitions from mobile carriers to band-tail or deep trap states.

Influence of polymer compatibility on the open-circuit voltage in ternary blend bulk heterojunction solar cells.

The evolution of the open-circuit voltage (Voc) with composition in ternary blend bulk heterojunction (BHJ) solar cells is correlated with the miscibility of the polymers. Ternary blends based on poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) and poly(3-hexylthiophene-thiophene-diketopyrrolopyrrole) (P3HTT-DPP-10%) with phenyl-C61-butyric acid methyl ester (PC61BM) acceptor were investigated. The Voc is pinned to the lower value of the P3HTT-DPP-10%:PC61BM binary blend even up to 95% PCDTBT in the polymer fraction. This is in stark contrast to the previously investigated system based on P3HTT-DPP-10%, poly(3-hexylthiophene-co-3-(2-ethylhexyl)thiophene) (P3HT75-co-EHT25), and PC61BM, where the Voc varied regularly across the full composition range, as explained by an organic alloy model, implying strong physical and electronic interaction between the polymers. Photocurrent spectral response (PSR) and external quantum efficiency (EQE) measurements indicate that the present system does not exhibit the hallmarks of alloy formation. Measured values of the surface energies of the polymers support miscibility of P3HTT-DPP-10% with P3HT75-co-EHT25 but not with PCDTBT. Surface energy is proposed as a figure of merit for predicting alloy formation and compositional dependence of the Voc in ternary blend solar cells and miscibility between polymers is proposed as a necessary attribute for polymer pairs that will display alloy behavior.

Sol-gel solution-deposited InGaZnO thin film transistors.

Thin film transistors (TFTs) fabricated by solution processing of sol-gel oxide semiconductor precursors in the group In-Ga-Zn are described. The TFT mobility varies over a wide range depending on the precursor materials, the composition, and the processing variables, with the highest mobility being about 30 cm(2)/(V s) for IZO and 20 cm(2)/(V s) for IGZO. The positive dark bias stress effect decreases markedly as the mobility increases and the high mobility devices are quite stable. The negative bias illumination stress effect is also weaker in the higher mobility TFTs, and some different characteristic properties are observed. The TFT mobility, threshold voltage, and bias stress properties are discussed in terms of the formation of self-compensated donor and acceptor states, based on the chemistry and thermodynamics of the sol-gel process.

25th anniversary article: a decade of organic/polymeric photovoltaic research.

Organic photovoltaic (OPV) technology has been developed and improved from a fancy concept with less than 1% power conversion efficiency (PCE) to over 10% PCE, particularly through the efforts in the last decade. The significant progress is the result of multidisciplinary research ranging from chemistry, material science, physics, and engineering. These efforts include the design and synthesis of novel compounds, understanding and controlling the film morphology, elucidating the device mechanisms, developing new device architectures, and improving large-scale manufacture. All of these achievements catalyzed the rapid growth of the OPV technology. This review article takes a retrospective look at the research and development of OPV, and focuses on recent advances of solution-processed materials and devices during the last decade, particular the polymer version of the materials and devices. The work in this field is exciting and OPV technology is a promising candidate for future thin film solar cells.

Origin of the tunable open-circuit voltage in ternary blend bulk heterojunction organic solar cells.

Ternary blend bulk heterojunction organic solar cells comprising either a polythiophene donor and two fullerene acceptors or two polythiophene donors and a fullerene acceptor are shown to have unique electronic properties. Measurements of the photocurrent spectral response and the open-circuit voltage show that the HOMO and LUMO levels change continuously with composition in the respective two-component acceptor or donor pair, consistent with the formation of an organic alloy. However, optical absorption of the exciton states retains the individual molecular properties of the two materials across the blend composition. This difference is attributed to the highly localized molecular nature of the exciton and the more delocalized intermolecular nature of electrons and holes that reflect the average composition of the alloy. As established here, the combination of molecular excitations that can harvest a wide range of photon energies and electronic alloy states that can adjust the open-circuit voltage provides the underlying basis of ternary blends as a platform for highly efficient next-generation organic solar cells.

Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.

Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid nanowire/thin-film devices was found to decrease by 3 orders of magnitude. Devices with the graded contacts had on/off ratios of ∼10(5), field-effect mobility of ∼50 cm(2)/(V s), and subthreshold swing of 2.5 V/decade. A 2 in. diagonal 160 × 180 pixel image sensor array was fabricated by integrating the SiNW backplane with an a-Si:H p-i-n photodiode.

An investigation of signal performance enhancements achieved through innovative pixel design across several generations of indirect detection, active matrix, flat-panel arrays.

Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection achieved through innovations in indirect detection array pixel design. Such improvements have a particularly beneficial effect on performance in applications involving low exposures and/or high spatial frequencies, where detective quantum efficiency is strongly reduced due to the relatively high level of additive electronic noise compared to signal levels of AMFPI devices. In this article, an examination of various signal properties, as determined through measurements and calculations related to novel array designs, is reported in the context of the evolution of AMFPI pixel design. For these studies, dark, optical, and radiation signal measurements were performed on prototype imagers incorporating a variety of increasingly sophisticated array designs, with pixel pitches ranging from 75 to 127 microm. For each design, detailed measurements of fundamental pixel-level properties conducted under radiographic and fluoroscopic operating conditions are reported and the results are compared. A series of 127 microm pitch arrays employing discrete photodiodes culminated in a novel design providing an optical fill factor of approximately 80% (thereby assuring improved x-ray sensitivity), and demonstrating low dark current, very low charge trapping and charge release, and a large range of linear signal response. In two of the designs having 75 and 90 microm pitches, a novel continuous photodiode structure was found to provide fill factors that approach the theoretical maximum of 100%. Both sets of novel designs achieved large fill factors by employing architectures in which some, or all of the photodiode structure was elevated above the plane of the pixel addressing transistor. Generally, enhancement of the fill factor in either discrete or continuous photodiode arrays was observed to result in no degradation in MTF due to charge sharing between pixels. While the continuous designs exhibited relatively high levels of charge trapping and release, as well as shorter ranges of linearity, it is possible that these behaviors can be addressed through further refinements to pixel design. Both the continuous and the most recent discrete photodiode designs accommodate more sophisticated pixel circuitry than is present on conventional AMFPIs--such as a pixel clamp circuit, which is demonstrated to limit signal saturation under conditions corresponding to high exposures. It is anticipated that photodiode structures such as the ones reported in this study will enable the development of even more complex pixel circuitry, such as pixel-level amplifiers, that will lead to further significant improvements in imager performance.

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of approximately 560 e (rms) for PSI-3.

Analytic model for diffuse reflectivity of silicon nanowire mats.

Disordered silicon nanowires are diffuse optical reflectors, with reflectivity modified by the nanowire absorption. We present an analytical model which describes the reflectivity, absorption, and transmission of a nanowire mat, across a wide spectral range, and including substrate effects. The model provides the ability to predict the optical properties of other nanowire mat structures, including core/shell heterostructures.

Vertically integrated thin film color sensor arrays for imaging applications.

Large area color sensor arrays based on vertically integrated thin-film sensors were realized. The complete color information of each color pixel is detected at the same position of the sensor array without using optical filters. The sensor arrays consist of amorphous silicon thin film color sensors integrated on top of amorphous silicon readout transistors. The spectral sensitivity of the sensors is controlled by the applied bias voltage. The operating principle of the color sensor arrays is described. Furthermore, the image quality and the pixel cross talk of the sensor arrays is analyzed by measurements of the line spread function and the modulation transfer function.

A comparison of x-ray detectors for mouse CT imaging.

There is significant interest in using computed tomography (CT) for in vivo imaging applications in mouse models of disease. Most commercially available mouse x-ray CT scanners utilize a charge-coupled device (CCD) detector coupled via fibre optic taper to a phosphor screen. However, there has been little research to determine if this is the optimum detector for the specific task of in vivo mouse imaging. To investigate this issue, we have evaluated four detectors, including an amorphous selenium (a-Se) detector, an amorphous silicon (a-Si) detector with a gadolinium oxysulphide (GOS) screen, a CCD with a 3:1 fibre taper and a GOS screen, and a CCD with a 2:1 fibre taper and both GOS and thallium-doped caesium iodide (CsI:Tl) screens. The detectors were evaluated by measuring the modulation transfer function (MTF), noise power spectrum (NPS), detective quantum efficiency (DQE), stability over multiple exposures, and noise in reconstructed CT images. The a-Se detector had the best MTF and the highest DQE (0.6 at 0 lp mm(-1)) but had the worst stability (45% reduction after 2000 exposure frames). The a-Si detector and the CCD with the 3:1 fibre, both of which used the GOS screen, had very similar performance with a DQE of approximately 0.30 at 0 lp mm(-1). For the CCD with the 2:1 fibre, the CsI:Tl screen resulted in a nearly two-fold improvement in DQE over the GOS screen (0.4 versus 0.24 at 0 lp mm(-1)). The CCDs both had the best stability, with less than a 1% change in pixel values over multiple exposures. The pixel values of the a-Si detector increased 5% over multiple exposures due to the effects of image lag. Despite the higher DQE of the a-Se detector, the reconstructed CT images acquired with the a-Si detector had lower noise levels, likely due to the blurring effects from the phosphor screen.

Integrated hydrogenated amorphous Si photodiode detector for microfluidic bioanalytical devices.

Hydrogenated amorphous silicon (a-Si:H) PIN photodiodes have been developed and characterized as fluorescence detectors for microfluidic analysis devices. A discrete a-Si:H photodiode is first fabricated on a glass substrate and used to detect fluorescent dye standards using conventional confocal microscopy. In this format, the limit of detection for fluorescein flowing in a 50-microm deep channel is 680 pM (S/N = 3). A hybrid integrated detection system consisting of a half-ball lens, a ZnS/YF3 multilayer optical interference filter with a pinhole, and an annular a-Si:H photodiode is also developed that allows the laser excitation to pass up through the central aperture in the detector. Using this integrated detection device, the limit of detection for fluorescein is 17 nM, and DNA fragment sizing and chiral analysis of glutamic acid are successfully performed. The a-Si:H detector exhibits high sensitivity at the emission wavelengths of commonly used fluorescent dyes and is readily microfabricated and integrated at low cost making it ideal for portable microfluidic bioanalyzers and emerging large scale integrated microfluidic technologies.