An analytical model for organic bulk heterojunction solar cells based on Saha equation for exciton dissociation.

The power conversion efficiencies of organic solar cells (OSCs) have been greatly improved in recent years. However, latest experimental data of high efficiency OSCs, the sublinear relationship between the short circuit current density (Jsc) and light intensity (Pin), and the effects of energetic disorder in bulk heterojunction organic solar cells have not been understood. An analytical model for high-efficiency OSCs is proposed, which takes most physical factors into account that have been ignored in most previous models, including practical solar spectra and absorption spectra, degeneracy effect, exciton effect, space charge limited current, and unified mobility expression dependent on temperature, electric field and density, etc. Three analytical iterative methods are proposed to solve the strong non-linear Poisson equation and the drift-diffusion equations. The method for the drift-diffusion equations involves introducing two constant coefficients and determining their values self-consistently by demanding the space averages of approximate drift and diffusion currents equal to the averages of accurate ones. The theoretical results for five high-efficiency OSCs are in good agreement with experimental data, including current-voltage curves, light intensity-dependent Jsc and open-circuit voltage (Voc) curves. The effects of energetic disorder in bulk heterojunction organic solar cells, and the sublinear relationship Jsc ∝ Pαin (α < 1) can be well explained. The Saha equation for exciton dissociation and the space-charge-limited-current (SCLC) effect are important for modelling high-efficiency OSCs. The Voc ∼ Pin relationship can be influenced by many factors. But, the Jsc ∼ Pin relationship can be mainly and slightly influenced by the exciton effect and energetic disorder, respectively. When aiming to realize higher performance OSCs, one should decrease six material parameters, including the energetic disorder, exciton mass, deep level impurity concentration, the ratios of electron and hole mobilities, densities of states for electrons and holes, and potential barriers at the anode and cathode. The performance parameters of 15 triad compounds are predicted by using ab initio Eg and absorption spectra from the literature along with other input parameters taken from previous optimized values, and the efficiency of two compounds was found to exceed 35%.

Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon.

Highly sensitive short-wave infrared (SWIR) detectors, compatible with the silicon-based complementary metal oxide semiconductor (CMOS) process, are regarded as the key enabling components in the miniaturized system for weak signal detection. To date, the high photogain devices are greatly limited by a large bias voltage, low-temperature refrigeration, narrow response band, and complex fabrication processes. Here, we demonstrate high photogain detectors working in the SWIR region at room temperature, which use graphene for charge transport and Te-hyperdoped silicon (Te-Si) for infrared absorption. The prolonged lifetime of carriers, combined with the built-in potential generated at the interface between the graphene and the Te-Si, leads to an ultrahigh photogain of 109 at room temperature (300 K) for 1.55 µm light. The gain can be improved to 1012, accompanied by a noise equivalent power (NEP) of 0.08 pW Hz-1/2 at 80 K. Moreover, the proposed device exhibits a NEP of 4.36 pW Hz-1/2 at 300 K at the wavelength of 2.7 µm, which is exceeding the working region of InGaAs detectors. This research shows that graphene can be used as an efficient platform for silicon-based SWIR detection and provides a strategy for the low-power, uncooled, high-gain infrared detectors compatible with the CMOS process.

Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering.

The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line. Here, we report an enhanced photogating effect in a monolayer graphene photodetector based on a structured substrate, where the built-in potential is established by the mechanism of potential fluctuation engineering. We find that the enhancement factor of device responsivity is related to a newly defined parameter, namely, fluctuation period rate (Pf). Compared to the device without a nanostructured substrate, the responsivity of the device with an optimized Pf is enhanced by 100 times, reaching a responsivity of 240 A/W and a specific detectivity, D*, of 3.4 × 1012 Jones at 1550 nm wavelength and room temperature. Our experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration of the graphene photodetectors leverages the engineering of structures with monolayer graphene rather than materials with a multilayer complex structure. it should be universal and applicable to other hybrid photodetectors.