Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions.

Integrating two-dimensional (2D) materials with ferroelectric thin films may result in unique characteristics and novel applications due to the coupling between their intrinsic characters. Here, we observed the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO heterojunctions, which stems from the modulation of contact barriers and depletion width at the hetero-interface induced by the ferroelectric polarization. Besides, the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO depends on the thicknesses of the corresponding 2D materials, because the thickness-dependent work function or conductivity of 2D materials could change the contact barrier heights and widths at the interface of 2D materials and ferroelectrics. Our results will widen the memristive applications of 2D/ferroelectrics hetero-junctions and provide a pathway for the novel memory devices based on hetero-structures with 2D/3D materials in the future.

Thickness-Dependent Double-Epitaxial Growth in Strained SrTi0.7Co0.3O3-δ Films.

Perovskite-structured SrTi0.7Co0.3O3-δ (STCo) films of varying thicknesses were grown on SrTiO3(001) substrates using pulsed laser deposition. Thin films grow with a cube-on-cube epitaxy, but for films exceeding a critical thickness of about 120 nm, a double-epitaxial microstructure was observed, in which (110)-oriented crystals nucleated within the (001)-oriented STCo matrix, both orientations being epitaxial with the substrate. The crystal structure, strain state, and magnetic properties are described as a function of film thickness. Both the magnetic moment and the coercivity show maxima at the critical thickness. The formation of a double-epitaxial microstructure provides a mechanism for strain relief in epitaxially mismatched films.

Magnetic Phase Formation in Self-Assembled Epitaxial BiFeO3-MgO and BiFeO3-MgAl2O4 Nanocomposite Films Grown by Combinatorial Pulsed Laser Deposition.

Self-assembled epitaxial BiFeO3-MgO and BiFeO3-MgAl2O4 nanocomposite thin films were grown on SrTiO3 substrates by pulsed laser deposition. A two-phase columnar structure was observed for BiFeO3-MgO codeposition within a small window of growth parameters, in which the pillars consisted of a magnetic spinel phase (Mg,Fe)3O4 within a BiFeO3 matrix, similar to the growth of BiFeO3-MgFe2O4 nanocomposites reported elsewhere. Further, growth of a nanocomposite with BiFeO3-(CoFe2O4/MgO/MgFe2O4), in which the minority phase was grown from three different targets, gave spinel pillars with a uniform (Mg,Fe,Co)3O4 composition due to interdiffusion during growth, with a bifurcated shape from the merger of neighboring pillars. BiFeO3-MgAl2O4 did not form a well-defined vertical nanocomposite in spite of having lower lattice mismatch, but instead formed a two-phase film with in which the spinel phase contained Fe. These results illustrate the redistribution of Fe between the oxide phases during oxide codeposition to form a ferrimagnetic phase from antiferromagnetic or nonmagnetic targets.

Multiferroic behavior of templated BiFeO3-CoFe2O4 self-assembled nanocomposites.

Self-assembled BiFeO3-CoFe2O4 nanocomposites were templated into ordered structures in which the ferrimagnetic CoFe2O4 pillars form square arrays of periods 60-100 nm in a ferroelectric BiFeO3 matrix. The ferroelectricity, magnetism, conductivity, and magnetoelectric coupling of the ordered nanocomposites were characterized by scanning probe microscopy. The insulating BiFeO3 matrix exhibited ferroelectric domains, whereas the resistive CoFe2O4 pillars exhibited single-domain magnetic contrast with high anisotropy due to the magnetoelasticity of the spinel phase. Magnetoelectric coupling was observed in which an applied voltage led to reversal of the magnetic pillars.

Integration of bulk-quality thin film magneto-optical cerium-doped yttrium iron garnet on silicon nitride photonic substrates.

Cerium substituted yttrium iron garnet (Ce:YIG) films were grown on yttrium iron garnet (YIG) seed layers on silicon nitride films using pulsed laser deposition. Optimal process conditions for forming garnet films on silicon nitride are presented. Bulk or near-bulk magnetic and magneto-optical properties were observed for 160 nm thick Ce:YIG films grown at 640 °C on rapid thermal annealed 40 nm thick YIG grown at 640 °C and 2 Hz pulse rate. The effect of growth temperature and deposition rate on structural, magnetic and magneto-optical properties has been investigated.

The effect of A-site substitution of Ce and La on the magnetic and electronic properties of Sr(Ti0.6Fe0.4)O(3-δ) films.

The structure and magnetic properties of epitaxial (Ce(x)Sr(1-x))(Ti(0.6)Fe(0.4))O(3-δ) (x = 0, 0.1, 0.2 and 0.3) and (La(x)Sr(1-x))(Ti(0.6)Fe(0.4))O(3-δ) (x = 0, 0.1, 0.2, 0.3 and 0.4) perovskite-structure thin films deposited by pulsed laser deposition on (LaAlO(3))(0.3)(Sr(2)AlTaO(6))(0.7) (LSAT) substrates are reported. Both La and Ce ions showed a dominant 3+ valence state and acted as donors on the Sr(2+) site (A site) in the perovskite lattice. The optical band gap widened, and the Fermi level moved toward the vacuum level with increased Ce or La content; meanwhile the Ti and particularly the Fe ions were driven to a lower valence state, resulting in a higher Fe(2+) concentration. The materials were magnetic at room temperature with up to 0.8 µ(B)/Fe and a magnetoelastic out-of-plane anisotropy. Ce and La lowered the coercivity while raising both the Faraday rotation at 1550 nm and the optical absorption at near-infrared wavelengths.