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J Nanosci Nanotechnol ; 14(7): 5335-41, 2014 Jul.
Artigo em Inglês | MEDLINE | ID: mdl-24758028

RESUMO

Pulsed laser deposition method was employed to grow nanostructured Pb(Zr0.52Ti0.48)O3 (PZT) thin film on Si(100) substrate. The structural and morphological properties of the thin film were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Optical properties of PZT thin film were studied using spectroscopic ellipsometry (SE) and a four layer model was applied. Spectra of ellipsometric parameters such as psi and delta were measured as a function of energy at room temperature. The refractive index (n), extinction coefficient (k), absorption coefficient (alpha) and the dielectric constants (epsilon(r) and epsilon(i)) of the thin film were obtained as a function of wavelength (200 to 900 nm range). The energy gap (E(g)) of the PZT thin film was estimated to be 3.65 eV. The thickness of the thin films was determined by the ellipsometric data (524 nm) and grain size is found to be in the range of 50-100 nm.

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