Transport across junctions of altermagnets with normal metals and ferromagnets.

Altermagnet (AM) is a novel time reversal symmetry broken magnetic phase withd-wave order which has been experimentally realized recently. We discuss theoretical models of AM based systems on lattice and in continuum. We show equivalence between the lattice and continuum models by mapping the respective parameters. We study (i) AM-normal metal and (ii) AM-ferromagnet (FM) junctions, with the aim to quantify transport properties such as conductivity and magnetoresistance. We find that a spin current accompanies charge current when a bias is applied. The magnetoresistance of AM-FM junction switches sign when AM is rotated by 90∘-a feature unique to the altermagnetic phase.

In-depth analysis of anisotropic magnetoconductance in Bi2Se3thin films with electron-electron interaction corrections.

A combination of out-of-plane (OOP) and in-plane (IP) magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the overall MC; a study that has so far received limited attention. In this article, we accurately extract the above WL contribution by systematically analyzing the temperature and magnetic field dependency of conductivity in Bi2Se3films. For accurate analysis, we quantify the contribution of electron-electron interactions to the measured MC which is often ignored in the WAL studies. Moreover, we show that the WAL effect arising from the TSSs with finite penetration depth, for OOP and IP magnetic field can together explain the anisotropic magnetoconductance (AMC) and, thus, the investigated AMC study can serve as a useful technique to probe the parameters like phase coherence length and penetration depth that characterise the TSSs in 3D TIs. We also demonstrate that increase in bulk-disorder, achieved by growing the films on amorphous SiO2substrate rather than on crystalline Al2O3(0001), can lead to stronger decoupling between the top and bottom surface states of the film.

Finite transverse conductance in topological insulators under an applied in-plane magnetic field.

Recently, in topological insulators (TIs) the phenomenon of planar Hall effect wherein a current driven in presence an in-plane magnetic field generates a transverse voltage has been experimentally witnessed. There have been a couple of theoretical explanations of this phenomenon. We investigate this phenomenon based on scattering theory on a normal metal (NM)-TI-normal metal hybrid structure and calculate the conductances in longitudinal and transverse directions to the applied bias. The transverse conductance depends on the spatial location between the two NM-TI junctions where it is calculated. It is zero in the drain electrode when the chemical potentials of the top and the bottom TI surfaces (µtandµbrespectively) are equal. The longitudinal conductance isπ-periodic inϕ-the angle between the bias direction and the direction of the in-plane magnetic field. The transverse conductance isπ-periodic inϕwhenµt= µbwhereas it is 2π-periodic inϕwhenµt≠ µb. As a function of the magnetic field, the magnitude of transverse conductance increases initially and peaks. At higher magnetic fields, it decays for anglesϕcloser to 0,πwhereas oscillates for anglesϕclose toπ/2. The conductances oscillate with the length of the TI region. A finite width of the system makes the transport separate into finitely many channels. The features of the conductances are similar to those in the limit of infinitely wide system except when the width is so small that only one channel participates in the transport. When only one channel participates in transport, the transverse conductance in the region 0 Lis zero even for the caseµt≠ µb. We understand the features in the obtained results.

Large Enhancement of Critical Current in Superconducting Devices by Gate Voltage.

Significant control over the properties of a high-carrier density superconductor via an applied electric field has been considered infeasible due to screening of the field over atomic length scales. Here, we demonstrate an enhancement of up to 30% in critical current in a back-gate tunable NbN micro- and nano superconducting bridges. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore, we demonstrate an applied electric field-dependent infinite electroresistance and hysteretic resistance. Our work presents an electric field driven enhancement in the superconducting property in type-II superconductors which is a crucial step toward the understanding of field-effects on the fundamental properties of a superconductor and its exploitation for logic and memory applications in a superconductor-based low-dissipation digital computing paradigm.

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor.

Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl3. This leads to the best-reported monolayer graphene mobilities (4900 cm2/(V s)) at these high hole densities (3 × 1013 cm-2) and yields larger charge transfer to bilayer graphene (6 × 1013 cm-2).

A study of electron and thermal transport in layered titanium disulphide single crystals.

We present a detailed study of thermal and electrical transport behavior of single crystal titanium disulphide flakes, which belong to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85-285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T 2 dependence of resistivity in the range of 42-300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T 2 to T 5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro-Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.