Mixology of MA1-x EA x PbI3 Hybrid Perovskites: Phase Transitions, Cation Dynamics, and Photoluminescence.

Mixing molecular cations in hybrid lead halide perovskites is a highly effective approach to enhance the stability and performance of optoelectronic devices based on these compounds. In this work, we prepare and study novel mixed 3D methylammonium (MA)-ethylammonium (EA) MA1-x EA x PbI3 (x < 0.4) hybrid perovskites. We use a suite of different techniques to determine the structural phase diagram, cation dynamics, and photoluminescence properties of these compounds. Upon introduction of EA, we observe a gradual lowering of the phase-transition temperatures, indicating stabilization of the cubic phase. For mixing levels higher than 30%, we obtain a complete suppression of the low-temperature phase transition and formation of a new tetragonal phase with a different symmetry. We use broad-band dielectric spectroscopy to study the dielectric response of the mixed compounds in an extensive frequency range, which allows us to distinguish and characterize three distinct dipolar relaxation processes related to the molecular cation dynamics. We observe that mixing increases the rotation barrier of the MA cations and tunes the dielectric permittivity values. For the highest mixing levels, we observe the signatures of the dipolar glass phase formation. Our findings are supported by density functional theory calculations. Our photoluminescence measurements reveal a small change of the band gap upon mixing, indicating the suitability of these compounds for optoelectronic applications.

Hole-Pinned Defect Clusters for a Large Dielectric Constant up to GHz in Zinc and Niobium Codoped Rutile SnO2.

High permittivity materials for a gigahertz (GHz) communication technology have been actively sought for some time. Unfortunately, in most materials, the dielectric constant starts to drop as frequencies increase through the megahertz (MHz) range. In this work, we report a large dielectric constant of ∼800 observed in defect-mediated rutile SnO2 ceramics, which is nearly frequency and temperature independent over the frequency range of 1 mHz to 35 GHz and temperature range of 50-450 K. Experimental and theoretical investigations demonstrate that the origin of the high dielectric constant can be attributed to the formation of locally well-defined Zn2+-Nb4+ defect clusters, which create hole-pinned defect dipoles. We believe that this work provides a promising strategy to advance dipole polarization theory and opens up a direction for the design and development of high frequency, broadband dielectric materials for use in future communication technology.