Nanohardness and Young's Modulus of Pb1-xCdxTe Crystals Grown by the SSVG and MBE Methods.

The nanohardness and Young's modulus of Pb1-xCdxTe single crystals prepared by the self-selecting vapor growth (SSVG) method and thick, MBE-grown layers with a total Cd content of up to 7% metal atoms were studied using the nanoindentation technique; the nanohardness and Young's modulus were calculated by the Oliver and Pharr method. Significant hardening of SSVG crystals with increasing number of Cd atoms replacing Pb atoms in the formed solid solution was observed, and low anisotropy of the nanohardness and Young's modulus were found. The CdTe solubility limit in the solid solution grown using an MBE equal to 2.1% was demonstrated; even for the significantly higher total Cd concentration in the layer, the possible presence of precipitates was not detected. Significant differences were found for both the energy of elastic crystal deformation and Young's modulus determined for samples grown using the two methods. An increase in nanohardness with an increase in the number of Cd atoms outside the cation sublattice was shown. The different ratios of hardening mechanisms acting simultaneously in the analyzed crystals in various ranges of Cd concentrations were demonstrated and discussed. The observed effects were attributed to the much higher concentration of point defects in MBE-grown layers than in SSVG crystals, in particular, the interstitial Cd-Te vacancy complexes effectively hampering nucleation and propagation of dislocations in the former case.

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties.

Results of comparative structural characterization of bare and Zn-covered ZnTe nanowires (NWs) before and after thermal oxidation at 300 °C are presented. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and Raman scattering not only unambiguously confirm the conversion of the outer layer of the NWs into ZnO, but also demonstrate the influence of the oxidation process on the structure of the inner part of the NWs. Our study shows that the morphology of the resulting ZnO can be improved by the deposition of thin Zn shells on the bare ZnTe NWs prior to the oxidation. The oxidation of bare ZnTe NWs results in the formation of separated ZnO nanocrystals which decorate crystalline Te cores of the NWs. In the case of Zn-covered NWs, uniform ZnO shells are formed, however they are of a fine-crystalline structure or partially amorphous. Our study provides an important insight into the details of the oxidation processes of ZnTe nanostructures, which could be of importance for the preparation and performance of ZnTe based nano-devices operating under normal atmospheric conditions and at elevated temperatures.

Phonon mode potential and its contribution to anharmonism.

We present systematic ab-initio study on the phonon mode potential as a source of anharmonicity in the crystal. As an example, the transverse optical (TO) mode potential in PbTe has been fitted to density-functional-theory calculated energies of phonons excited with different amplitudes of mode displacements. The corresponding equation of motion has been analytically and numerically solved in 1D and 2D space, respectively. The solution is used for constructing the ensemble of 10,000 systems with potential and kinetic energies selected according to the thermal equilibrium distributions. The velocity auto-correlation function derived from the computed trajectories is then used to calculate the profile of the phonon spectrum for the TO an LA modes at three temperatures of 100, 300, and 600 K. This technique allows for determination of the contribution of non-quadratic potential of the phonon mode to the anharmonicity in the crystal and its effect on the phonon spectrum.

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy.

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated. (In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {11̅00} side facets of the cores at much lower temperature (220 °C). High-resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ∼ 17 K.

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn(2+) acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method. X-ray diffraction, Raman spectroscopy, and temperature dependent photoluminescence measurements confirm the incorporation of Mn(2+) ions in the cation substitutional sites of the ZnTe matrix of the NWs.